Nanoscale Stresses Simulation and Characterization of Deep Sub-micron Semiconductor Devices PDF Download
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Author: Jian Li
Publisher:
ISBN:
Category :
Languages : en
Pages : 410
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Book Description
Author: Jian Li
Publisher:
ISBN:
Category :
Languages : en
Pages : 410
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Book Description
Author: Margrit Hanbücken
Publisher: John Wiley & Sons
ISBN: 3527639551
Category : Technology & Engineering
Languages : en
Pages : 354
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Book Description
Bringing together experts from the various disciplines involved, this first comprehensive overview of the current level of stress engineering on the nanoscale is unique in combining the theoretical fundamentals with simulation methods, model systems and characterization techniques. Essential reading for researchers in microelectronics, optoelectronics, sensing, and photonics.
Author: A.G. Cullis
Publisher: CRC Press
ISBN: 1351091522
Category : Science
Languages : en
Pages : 1313
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Book Description
The Institute of Physics Conference Series is a leading International medium for the rapid publication of proceedings of major conferences and symposia reviewing new developments in physics and related areas. Volumes in the series comprise original refereed papers and are regarded as standard referee works. As such, they are an essential part of major libration collections worldwide. The twelfth conference on the Microscopy of Semiconducting Materials (MSM) was held at the University of Oxford, 25-29 March 2001. MSM conferences focus on recent international advances in semiconductor studies carried out by all forms of microscopy. The event was organized with scientific sponsorship by the Royal Microscopical Society, The Electron Microscopy and Analysis Group of the Institute of Physics and the Materials Research Society. With the continual shrinking of electronic device dimensions and accompanying enhancement in device performance, the understanding of semiconductor microscopic properties at the nanoscale (and even at the atomic scale) is increasingly critical for further progress to be achieved. This conference proceedings provides an overview of the latest instrumentation, analysis techniques and state-of-the-art advances in semiconducting materials science for solid state physicists, chemists, and materials scientists.
Author: Brajesh Kumar Kaushik
Publisher: CRC Press
ISBN: 1351670220
Category : Science
Languages : en
Pages : 453
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Book Description
The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter
Author: Zhiyong Ma
Publisher: CRC Press
ISBN: 135173394X
Category : Science
Languages : en
Pages : 889
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Book Description
Nanoelectronics is changing the way the world communicates, and is transforming our daily lives. Continuing Moore’s law and miniaturization of low-power semiconductor chips with ever-increasing functionality have been relentlessly driving R&D of new devices, materials, and process capabilities to meet performance, power, and cost requirements. This book covers up-to-date advances in research and industry practices in nanometrology, critical for continuing technology scaling and product innovation. It holistically approaches the subject matter and addresses emerging and important topics in semiconductor R&D and manufacturing. It is a complete guide for metrology and diagnostic techniques essential for process technology, electronics packaging, and product development and debugging—a unique approach compared to other books. The authors are from academia, government labs, and industry and have vast experience and expertise in the topics presented. The book is intended for all those involved in IC manufacturing and nanoelectronics and for those studying nanoelectronics process and assembly technologies or working in device testing, characterization, and diagnostic techniques.
Author: David Esseni
Publisher: Cambridge University Press
ISBN: 1139494384
Category : Technology & Engineering
Languages : en
Pages : 489
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Book Description
Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2540
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Book Description
Author: Saumil S. Shah
Publisher:
ISBN:
Category :
Languages : en
Pages : 282
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Book Description
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1948
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Book Description
Author: Chandan Kumar Sarkar
Publisher: CRC Press
ISBN: 1466512660
Category : Technology & Engineering
Languages : en
Pages : 428
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Book Description
Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.
