Nanoscale CMOS Modeling PDF Download
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Author: Mohan Vamsi Dunga
Publisher:
ISBN:
Category :
Languages : en
Pages : 440
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Book Description
Author: Mohan Vamsi Dunga
Publisher:
ISBN:
Category :
Languages : en
Pages : 440
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Book Description
Author: Francis Balestra
Publisher: John Wiley & Sons
ISBN: 1118622472
Category : Technology & Engineering
Languages : en
Pages : 518
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Book Description
This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future – in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling. The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.
Author: Chung-Hsun Lin
Publisher:
ISBN:
Category :
Languages : en
Pages : 370
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Book Description
Author: Jonghwan Lee
Publisher:
ISBN:
Category : Electronic circuits
Languages : en
Pages : 414
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Book Description
Author: Sandip Kundu
Publisher: McGraw Hill Professional
ISBN: 0071635203
Category : Technology & Engineering
Languages : en
Pages : 316
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Book Description
Cutting-Edge CMOS VLSI Design for Manufacturability Techniques This detailed guide offers proven methods for optimizing circuit designs to increase the yield, reliability, and manufacturability of products and mitigate defects and failure. Covering the latest devices, technologies, and processes, Nanoscale CMOS VLSI Circuits: Design for Manufacturability focuses on delivering higher performance and lower power consumption. Costs, constraints, and computational efficiencies are also discussed in the practical resource. Nanoscale CMOS VLSI Circuits covers: Current trends in CMOS VLSI design Semiconductor manufacturing technologies Photolithography Process and device variability: analyses and modeling Manufacturing-Aware Physical Design Closure Metrology, manufacturing defects, and defect extraction Defect impact modeling and yield improvement techniques Physical design and reliability DFM tools and methodologies
Author: Soumya Pandit
Publisher: CRC Press
ISBN: 1466564288
Category : Technology & Engineering
Languages : en
Pages : 397
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Book Description
Reliability concerns and the limitations of process technology can sometimes restrict the innovation process involved in designing nano-scale analog circuits. The success of nano-scale analog circuit design requires repeat experimentation, correct analysis of the device physics, process technology, and adequate use of the knowledge database. Starting with the basics, Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design introduces the essential fundamental concepts for designing analog circuits with optimal performances. This book explains the links between the physics and technology of scaled MOS transistors and the design and simulation of nano-scale analog circuits. It also explores the development of structured computer-aided design (CAD) techniques for architecture-level and circuit-level design of analog circuits. The book outlines the general trends of technology scaling with respect to device geometry, process parameters, and supply voltage. It describes models and optimization techniques, as well as the compact modeling of scaled MOS transistors for VLSI circuit simulation. • Includes two learning-based methods: the artificial neural network (ANN) and the least-squares support vector machine (LS-SVM) method • Provides case studies demonstrating the practical use of these two methods • Explores circuit sizing and specification translation tasks • Introduces the particle swarm optimization technique and provides examples of sizing analog circuits • Discusses the advanced effects of scaled MOS transistors like narrow width effects, and vertical and lateral channel engineering Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design describes the models and CAD techniques, explores the physics of MOS transistors, and considers the design challenges involving statistical variations of process technology parameters and reliability constraints related to circuit design.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Saraju P. Mohanty
Publisher: Springer Science & Business Media
ISBN: 0387764747
Category : Technology & Engineering
Languages : en
Pages : 325
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Book Description
This self-contained book addresses the need for analysis, characterization, estimation, and optimization of the various forms of power dissipation in the presence of process variations of nano-CMOS technologies. The authors show very large-scale integration (VLSI) researchers and engineers how to minimize the different types of power consumption of digital circuits. The material deals primarily with high-level (architectural or behavioral) energy dissipation.
Author: Weimin Zhang
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
A FinFET-based hybrid device, namely the inverted-T (IT) FET, is proposed for improving current drive per pitch by fabricating a single-gate fully-depleted (FD) SOI MOSFET in the unused portion of the pitch area. Physical insights regarding the design and performance of the ITFET are gained with the UFDG model in Spice3, combined with simulations done with the 3-D numerical simulator Davinci, with design goals to achieve good current-voltage characteristics, i.e., high Ion/pitch and high Ion/Ioff with acceptable V sub t. Its advantages in effecting a good design of a nanoscale SRAM cell and of a novel two-transistor floating-body memory cell (2TFBC) are proposed and analyzed.
Author: Soumya Pandit
Publisher: CRC Press
ISBN: 1351831992
Category : Technology & Engineering
Languages : en
Pages : 410
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Book Description
Reliability concerns and the limitations of process technology can sometimes restrict the innovation process involved in designing nano-scale analog circuits. The success of nano-scale analog circuit design requires repeat experimentation, correct analysis of the device physics, process technology, and adequate use of the knowledge database. Starting with the basics, Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design introduces the essential fundamental concepts for designing analog circuits with optimal performances. This book explains the links between the physics and technology of scaled MOS transistors and the design and simulation of nano-scale analog circuits. It also explores the development of structured computer-aided design (CAD) techniques for architecture-level and circuit-level design of analog circuits. The book outlines the general trends of technology scaling with respect to device geometry, process parameters, and supply voltage. It describes models and optimization techniques, as well as the compact modeling of scaled MOS transistors for VLSI circuit simulation. • Includes two learning-based methods: the artificial neural network (ANN) and the least-squares support vector machine (LS-SVM) method • Provides case studies demonstrating the practical use of these two methods • Explores circuit sizing and specification translation tasks • Introduces the particle swarm optimization technique and provides examples of sizing analog circuits • Discusses the advanced effects of scaled MOS transistors like narrow width effects, and vertical and lateral channel engineering Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design describes the models and CAD techniques, explores the physics of MOS transistors, and considers the design challenges involving statistical variations of process technology parameters and reliability constraints related to circuit design.
