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Author: Sandip Kundu
Publisher: McGraw Hill Professional
ISBN: 0071635203
Category : Technology & Engineering
Languages : en
Pages : 316
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Book Description
Cutting-Edge CMOS VLSI Design for Manufacturability Techniques This detailed guide offers proven methods for optimizing circuit designs to increase the yield, reliability, and manufacturability of products and mitigate defects and failure. Covering the latest devices, technologies, and processes, Nanoscale CMOS VLSI Circuits: Design for Manufacturability focuses on delivering higher performance and lower power consumption. Costs, constraints, and computational efficiencies are also discussed in the practical resource. Nanoscale CMOS VLSI Circuits covers: Current trends in CMOS VLSI design Semiconductor manufacturing technologies Photolithography Process and device variability: analyses and modeling Manufacturing-Aware Physical Design Closure Metrology, manufacturing defects, and defect extraction Defect impact modeling and yield improvement techniques Physical design and reliability DFM tools and methodologies
Author: Sandip Kundu
Publisher: McGraw Hill Professional
ISBN: 0071635203
Category : Technology & Engineering
Languages : en
Pages : 316
Get Book
Book Description
Cutting-Edge CMOS VLSI Design for Manufacturability Techniques This detailed guide offers proven methods for optimizing circuit designs to increase the yield, reliability, and manufacturability of products and mitigate defects and failure. Covering the latest devices, technologies, and processes, Nanoscale CMOS VLSI Circuits: Design for Manufacturability focuses on delivering higher performance and lower power consumption. Costs, constraints, and computational efficiencies are also discussed in the practical resource. Nanoscale CMOS VLSI Circuits covers: Current trends in CMOS VLSI design Semiconductor manufacturing technologies Photolithography Process and device variability: analyses and modeling Manufacturing-Aware Physical Design Closure Metrology, manufacturing defects, and defect extraction Defect impact modeling and yield improvement techniques Physical design and reliability DFM tools and methodologies
Author: Francis Balestra
Publisher: John Wiley & Sons
ISBN: 1118622472
Category : Technology & Engineering
Languages : en
Pages : 518
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Book Description
This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future – in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling. The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.
Author: Saraju P. Mohanty
Publisher: Springer Science & Business Media
ISBN: 0387764747
Category : Technology & Engineering
Languages : en
Pages : 325
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Book Description
This self-contained book addresses the need for analysis, characterization, estimation, and optimization of the various forms of power dissipation in the presence of process variations of nano-CMOS technologies. The authors show very large-scale integration (VLSI) researchers and engineers how to minimize the different types of power consumption of digital circuits. The material deals primarily with high-level (architectural or behavioral) energy dissipation.
Author: Ban Wong
Publisher: John Wiley & Sons
ISBN: 0471678864
Category : Technology & Engineering
Languages : en
Pages : 413
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Book Description
Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength optical lithography; impact of process scaling on circuit and physical implementation and low power with leaky transistors; and DFM, yield, and the impact of physical implementation.
Author: Joao Oliveira
Publisher: Springer Science & Business Media
ISBN: 1461416701
Category : Technology & Engineering
Languages : en
Pages : 204
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Book Description
This book is dedicated to the analysis of parametric amplification with special emphasis on the MOS discrete-time implementation. This implementation is demonstrated by the presentation of several circuits where the MOS parametric amplifier cell is used: small gain amplifier, comparator with embedded pre-amplification, discrete-time mixer/IIR-Filter, and analog-to-digital converter (ADC). Experimental results are shown to validate the overall design technique.
Author: Sandeep K. Goel
Publisher: CRC Press
ISBN: 143982942X
Category : Technology & Engineering
Languages : en
Pages : 259
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Book Description
Advances in design methods and process technologies have resulted in a continuous increase in the complexity of integrated circuits (ICs). However, the increased complexity and nanometer-size features of modern ICs make them susceptible to manufacturing defects, as well as performance and quality issues. Testing for Small-Delay Defects in Nanoscale CMOS Integrated Circuits covers common problems in areas such as process variations, power supply noise, crosstalk, resistive opens/bridges, and design-for-manufacturing (DfM)-related rule violations. The book also addresses testing for small-delay defects (SDDs), which can cause immediate timing failures on both critical and non-critical paths in the circuit. Overviews semiconductor industry test challenges and the need for SDD testing, including basic concepts and introductory material Describes algorithmic solutions incorporated in commercial tools from Mentor Graphics Reviews SDD testing based on "alternative methods" that explores new metrics, top-off ATPG, and circuit topology-based solutions Highlights the advantages and disadvantages of a diverse set of metrics, and identifies scope for improvement Written from the triple viewpoint of university researchers, EDA tool developers, and chip designers and tool users, this book is the first of its kind to address all aspects of SDD testing from such a diverse perspective. The book is designed as a one-stop reference for current industrial practices, research challenges in the domain of SDD testing, and recent developments in SDD solutions.
Author: Hei Wong
Publisher: CRC Press
ISBN: 1351833286
Category : Technology & Engineering
Languages : en
Pages : 251
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Book Description
According to Moore’s Law, not only does the number of transistors in an integrated circuit double every two years, but transistor size also decreases at a predictable rate. At the rate we are going, the downsizing of CMOS transistors will reach the deca-nanometer scale by 2020. Accordingly, the gate dielectric thickness will be shrunk to less than half-nanometer oxide equivalent thickness (EOT) to maintain proper operation of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT. This comprehensive, up-to-date text covering the physics, materials, devices, and fabrication processes for high-k gate dielectric materials, Nano-CMOS Gate Dielectric Engineering systematically describes how the fundamental electronic structures and other material properties of the transition metals and rare earth metals affect the electrical properties of the dielectric films, the dielectric/silicon and the dielectric/metal gate interfaces, and the resulting device properties. Specific topics include the problems and solutions encountered with high-k material thermal stability, defect density, and poor initial interface with silicon substrate. The text also addresses the essence of thin film deposition, etching, and process integration of high-k materials in an actual CMOS process. Fascinating in both content and approach, Nano-CMOS Gate Dielectric Engineering explains all of the necessary physics in a highly readable manner and supplements this with numerous intuitive illustrations and tables. Covering almost every aspect of high-k gate dielectric engineering for nano-CMOS technology, this is a perfect reference book for graduate students needing a better understanding of developing technology as well as researchers and engineers needing to get ahead in microelectronic engineering and materials science.
Author: Filip Tavernier
Publisher: Springer Science & Business Media
ISBN: 1441999256
Category : Technology & Engineering
Languages : en
Pages : 231
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Book Description
This book describes the design of optical receivers that use the most economical integration technology, while enabling performance that is typically only found in very expensive devices. To achieve this, all necessary functionality, from light detection to digital output, is integrated on a single piece of silicon. All building blocks are thoroughly discussed, including photodiodes, transimpedance amplifiers, equalizers and post amplifiers.
Author: Simon Deleonibus
Publisher: CRC Press
ISBN: 0429533624
Category : Technology & Engineering
Languages : en
Pages : 332
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Book Description
In this book, internationally recognized researchers give a state-of-the-art overview of the electronic device architectures required for the nano-CMOS era and beyond. Challenges relevant to the scaling of CMOS nanoelectronics are addressed through different core CMOS and memory device options in the first part of the book. The second part reviews new device concepts for nanoelectronics beyond CMOS. The book covers the fundamental limits of core CMOS, improving scaling by the introduction of new materials or processes, new architectures using SOI, multigates and multichannels, and quantum computing.
Author: Vinod Kumar Khanna
Publisher: Springer
ISBN: 8132236254
Category : Technology & Engineering
Languages : en
Pages : 451
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Book Description
Keeping nanoelectronics in focus, this book looks at interrelated fields namely nanomagnetics, nanophotonics, nanomechanics and nanobiotechnology, that go hand-in-hand or are likely to be utilized in future in various ways for backing up or strengthening nanoelectronics. Complementary nanosciences refer to the alternative nanosciences that can be combined with nanoelectronics. The book brings students and researchers from multiple disciplines (and therefore with disparate levels of knowledge, and, more importantly, lacunae in this knowledge) together and to expose them to the essentials of integrative nanosciences. The central idea is that the five identified disciplines overlap significantly and arguably cohere into one fundamental nanotechnology discipline. The book caters to interdisciplinary readership in contrast to many of the existing nanotechnology related books that relate to a specific discipline. The book lays special emphasis on nanoelectronics since this field has advanced most rapidly amongst all the nanotechnology disciplines and with significant commercial pervasion. In view of the significant impact that nanotechnology is predicted to have on society, the topics and their interrelationship in this book are of considerable interest and immense value to students, professional engineers, and reserachers.
