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Author: Saraju P. Mohanty
Publisher: Institution of Engineering and Technology
ISBN: 9781849199988
Category : Technology & Engineering
Languages : en
Pages : 352
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Book Description
The demand for ever smaller and portable electronic devices has driven metal oxide semiconductor-based (CMOS) technology to its physical limit with the smallest possible feature sizes. This presents various size-related problems such as high power leakage, low-reliability, and thermal effects, and is a limit on further miniaturization. To enable even smaller electronics, various nanodevices including carbon nanotube transistors, graphene transistors, tunnel transistors and memristors (collectively called post-CMOS devices) are emerging that could replace the traditional and ubiquitous silicon transistor. This book explores these nanoelectronics at the device level including modelling and design. Topics covered include high-k dielectrics; high mobility n and p channels on gallium arsenide and silicon substrates using interfacial misfit dislocation arrays; anodic metal-insulator-metal (MIM) capacitors; graphene transistors; junction and doping free transistors; nanoscale gigh-k/metal-gate CMOS and FinFET based logic libraries; multiple-independent-gate nanowire transistors; carbon nanotubes for efficient power delivery; timing driven buffer insertion for carbon nanotube interconnects; memristor modeling; and neuromorphic devices and circuits. This book is essential reading for researchers, research-focused industry designers/developers, and advanced students working on next-generation electronic devices and circuits.
Author: Saraju P. Mohanty
Publisher: Institution of Engineering and Technology
ISBN: 9781849199988
Category : Technology & Engineering
Languages : en
Pages : 352
Get Book Here
Book Description
The demand for ever smaller and portable electronic devices has driven metal oxide semiconductor-based (CMOS) technology to its physical limit with the smallest possible feature sizes. This presents various size-related problems such as high power leakage, low-reliability, and thermal effects, and is a limit on further miniaturization. To enable even smaller electronics, various nanodevices including carbon nanotube transistors, graphene transistors, tunnel transistors and memristors (collectively called post-CMOS devices) are emerging that could replace the traditional and ubiquitous silicon transistor. This book explores these nanoelectronics at the device level including modelling and design. Topics covered include high-k dielectrics; high mobility n and p channels on gallium arsenide and silicon substrates using interfacial misfit dislocation arrays; anodic metal-insulator-metal (MIM) capacitors; graphene transistors; junction and doping free transistors; nanoscale gigh-k/metal-gate CMOS and FinFET based logic libraries; multiple-independent-gate nanowire transistors; carbon nanotubes for efficient power delivery; timing driven buffer insertion for carbon nanotube interconnects; memristor modeling; and neuromorphic devices and circuits. This book is essential reading for researchers, research-focused industry designers/developers, and advanced students working on next-generation electronic devices and circuits.
Author: Saraju P. Mohanty
Publisher: IET
ISBN: 184919999X
Category : Technology & Engineering
Languages : en
Pages : 439
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Book Description
Continuing from volume 1, this volume outlines circuit- and system-level design approaches and issues for these devices. Topics covered include self-healing analog/RF circuits; on-chip gate delay variability measurement in scaled technology; FinFET SRAM circuits; nanoscale FinFET devices for PVT aware SRAM; low leakage variability aware CMOS logic circuits; thermal effects in MWCNT VLSI interconnects; an accurate PVT-aware statistical logic library for nano-CMOS integrated circuits; SPICEless RTL design optimization of nano-electronic digital integrated circuits; power-delay trade-off driven optimal scheduling of CDFGs during high level synthesis; green on-chip inductors for three-dimensional integrated circuits; 3D NoC -- a promising alternative for tomorrow's nano-system design; and DNA computing.
Author: Saraju P. Mohanty
Publisher: IET
ISBN: 1849199973
Category : Technology & Engineering
Languages : en
Pages : 383
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Book Description
Over two volumes this work describes the modelling, design, and implementation of nano-scaled CMOS electronics, and the new generation of post-CMOS devices, at both the device and circuit levels.
Author: Vinod Kumar Khanna
Publisher: Springer
ISBN: 8132236254
Category : Technology & Engineering
Languages : en
Pages : 471
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Book Description
Keeping nanoelectronics in focus, this book looks at interrelated fields namely nanomagnetics, nanophotonics, nanomechanics and nanobiotechnology, that go hand-in-hand or are likely to be utilized in future in various ways for backing up or strengthening nanoelectronics. Complementary nanosciences refer to the alternative nanosciences that can be combined with nanoelectronics. The book brings students and researchers from multiple disciplines (and therefore with disparate levels of knowledge, and, more importantly, lacunae in this knowledge) together and to expose them to the essentials of integrative nanosciences. The central idea is that the five identified disciplines overlap significantly and arguably cohere into one fundamental nanotechnology discipline. The book caters to interdisciplinary readership in contrast to many of the existing nanotechnology related books that relate to a specific discipline. The book lays special emphasis on nanoelectronics since this field has advanced most rapidly amongst all the nanotechnology disciplines and with significant commercial pervasion. In view of the significant impact that nanotechnology is predicted to have on society, the topics and their interrelationship in this book are of considerable interest and immense value to students, professional engineers, and reserachers.
Author: Masayoshi Esashi
Publisher: John Wiley & Sons
ISBN: 3527823255
Category : Technology & Engineering
Languages : en
Pages : 521
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Book Description
3D and Circuit Integration of MEMS Explore heterogeneous circuit integration and the packaging needed for practical applications of microsystems MEMS and system integration are important building blocks for the “More-Than-Moore” paradigm described in the International Technology Roadmap for Semiconductors. And, in 3D and Circuit Integration of MEMS, distinguished editor Dr. Masayoshi Esashi delivers a comprehensive and systematic exploration of the technologies for microsystem packaging and heterogeneous integration. The book focuses on the silicon MEMS that have been used extensively and the technologies surrounding system integration. You’ll learn about topics as varied as bulk micromachining, surface micromachining, CMOS-MEMS, wafer interconnection, wafer bonding, and sealing. Highly relevant for researchers involved in microsystem technologies, the book is also ideal for anyone working in the microsystems industry. It demonstrates the key technologies that will assist researchers and professionals deal with current and future application bottlenecks. Readers will also benefit from the inclusion of: A thorough introduction to enhanced bulk micromachining on MIS process, including pressure sensor fabrication and the extension of MIS process for various advanced MEMS devices An exploration of epitaxial poly Si surface micromachining, including process condition of epi-poly Si, and MEMS devices using epi-poly Si Practical discussions of Poly SiGe surface micromachining, including SiGe deposition and LP CVD polycrystalline SiGe A concise treatment of heterogeneously integrated aluminum nitride MEMS resonators and filters Perfect for materials scientists, electronics engineers, and electrical and mechanical engineers, 3D and Circuit Integration of MEMS will also earn a place in the libraries of semiconductor physicists seeking a one-stop reference for circuit integration and the practical application of microsystems.
Author: Sergey Edward Lyshevski
Publisher: CRC Press
ISBN: 1420008145
Category : Technology & Engineering
Languages : en
Pages : 931
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Book Description
There are fundamental and technological limits of conventional microfabrication and microelectronics. Scaling down conventional devices and attempts to develop novel topologies and architectures will soon be ineffective or unachievable at the device and system levels to ensure desired performance. Forward-looking experts continue to search for new paradigms to carry the field beyond the age of microelectronics, and molecular electronics is one of the most promising candidates. The Nano and Molecular Electronics Handbook surveys the current state of this exciting, emerging field and looks toward future developments and opportunities. Molecular and Nano Electronics Explained Explore the fundamentals of device physics, synthesis, and design of molecular processing platforms and molecular integrated circuits within three-dimensional topologies, organizations, and architectures as well as bottom-up fabrication utilizing quantum effects and unique phenomena. Technology in Progress Stay current with the latest results and practical solutions realized for nanoscale and molecular electronics as well as biomolecular electronics and memories. Learn design concepts, device-level modeling, simulation methods, and fabrication technologies used for today's applications and beyond. Reports from the Front Lines of Research Expert innovators discuss the results of cutting-edge research and provide informed and insightful commentary on where this new paradigm will lead. The Nano and Molecular Electronics Handbook ranks among the most complete and authoritative guides to the past, present, and future of this revolutionary area of theory and technology.
Author: Rohit Dhiman
Publisher: CRC Press
ISBN: 1000778061
Category : Technology & Engineering
Languages : en
Pages : 255
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Book Description
The incessant scaling of complementary metal-oxide semiconductor (CMOS) technology has resulted in significant performance improvements in very-large-scale integration (VLSI) design techniques and system architectures. This trend is expected to continue in the future, but this requires breakthroughs in the design of nano-CMOS and post-CMOS technologies. Nanoelectronics refers to the possible future technologies beyond conventional CMOS scaling limits. This volume addresses the current state-of-the-art nanoelectronic technologies and presents potential options for next-generation integrated circuits. Nanoelectronics for Next-generation Integrated Circuits is a useful reference guide for researchers, engineers, and advanced students working on the frontier of the design and modeling of nanoelectronic devices and their integration aspects with future CMOS circuits. This comprehensive volume eloquently presents the design methodologies for spintronics memories, quantum-dot cellular automata, and post-CMOS FETs, including applications in emerging integrated circuit technologies.
Author: James E. Morris
Publisher: CRC Press
ISBN: 1466565241
Category : Technology & Engineering
Languages : en
Pages : 916
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Book Description
Nanoelectronic Device Applications Handbook gives a comprehensive snapshot of the state of the art in nanodevices for nanoelectronics applications. Combining breadth and depth, the book includes 68 chapters on topics that range from nano-scaled complementary metal–oxide–semiconductor (CMOS) devices through recent developments in nano capacitors and AlGaAs/GaAs devices. The contributors are world-renowned experts from academia and industry from around the globe. The handbook explores current research into potentially disruptive technologies for a post-CMOS world. These include: Nanoscale advances in current MOSFET/CMOS technology Nano capacitors for applications such as electronics packaging and humidity sensors Single electron transistors and other electron tunneling devices Quantum cellular automata and nanomagnetic logic Memristors as switching devices and for memory Graphene preparation, properties, and devices Carbon nanotubes (CNTs), both single CNT and random network Other CNT applications such as terahertz, sensors, interconnects, and capacitors Nano system architectures for reliability Nanowire device fabrication and applications Nanowire transistors Nanodevices for spintronics The book closes with a call for a new generation of simulation tools to handle nanoscale mechanisms in realistic nanodevice geometries. This timely handbook offers a wealth of insights into the application of nanoelectronics. It is an invaluable reference and source of ideas for anyone working in the rapidly expanding field of nanoelectronics.
Author: Saraju P. Mohanty
Publisher:
ISBN: 9781523103171
Category : TECHNOLOGY & ENGINEERING
Languages : en
Pages : 422
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Book Description
Over two volumes this work describes the modelling, design, and implementation of nano-scaled CMOS electronics, and the new generation of post-CMOS devices, at both the device and circuit levels.
Author: Soumya Pandit
Publisher: CRC Press
ISBN: 1466564288
Category : Technology & Engineering
Languages : en
Pages : 397
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Book Description
Reliability concerns and the limitations of process technology can sometimes restrict the innovation process involved in designing nano-scale analog circuits. The success of nano-scale analog circuit design requires repeat experimentation, correct analysis of the device physics, process technology, and adequate use of the knowledge database. Starting with the basics, Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design introduces the essential fundamental concepts for designing analog circuits with optimal performances. This book explains the links between the physics and technology of scaled MOS transistors and the design and simulation of nano-scale analog circuits. It also explores the development of structured computer-aided design (CAD) techniques for architecture-level and circuit-level design of analog circuits. The book outlines the general trends of technology scaling with respect to device geometry, process parameters, and supply voltage. It describes models and optimization techniques, as well as the compact modeling of scaled MOS transistors for VLSI circuit simulation. • Includes two learning-based methods: the artificial neural network (ANN) and the least-squares support vector machine (LS-SVM) method • Provides case studies demonstrating the practical use of these two methods • Explores circuit sizing and specification translation tasks • Introduces the particle swarm optimization technique and provides examples of sizing analog circuits • Discusses the advanced effects of scaled MOS transistors like narrow width effects, and vertical and lateral channel engineering Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design describes the models and CAD techniques, explores the physics of MOS transistors, and considers the design challenges involving statistical variations of process technology parameters and reliability constraints related to circuit design.
