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Author: Yuxiang Tu
Publisher: BoD – Books on Demand
ISBN: 0854666478
Category : Technology & Engineering
Languages : en
Pages : 118
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Book Description
This book covers a wide range of the latest innovations in MOSFETs, including discussions of developments in various important mainstream MOSFETs. It covers modeling and property studies in MOSFET fields, including the compact model of the DMG-GC-DOTTDCD cylindrical gate MOSFET and the electrophysical properties of nanofilms generated using the magnetron sputtering method. The innovative analytical potential, charge, and current distributions in junctionless MOSFETs are conducted, and the related differences between accurate and simplified models are discussed in detail. Nanoscale devices design multiple solutions are also presented. The book scope reflects the most recent MOSFET developments, applications, and trends, which open up new horizons and present a perfect reference source for people working in MOSFET fields. This book is also meaningful in engineering fields, especially in electronics engineering, which includes radio frequency, microwave, electronics systems networks, 5G, 6G, and so on.
Author: Yuxiang Tu
Publisher: BoD – Books on Demand
ISBN: 0854666478
Category : Technology & Engineering
Languages : en
Pages : 118
Get Book Here
Book Description
This book covers a wide range of the latest innovations in MOSFETs, including discussions of developments in various important mainstream MOSFETs. It covers modeling and property studies in MOSFET fields, including the compact model of the DMG-GC-DOTTDCD cylindrical gate MOSFET and the electrophysical properties of nanofilms generated using the magnetron sputtering method. The innovative analytical potential, charge, and current distributions in junctionless MOSFETs are conducted, and the related differences between accurate and simplified models are discussed in detail. Nanoscale devices design multiple solutions are also presented. The book scope reflects the most recent MOSFET developments, applications, and trends, which open up new horizons and present a perfect reference source for people working in MOSFET fields. This book is also meaningful in engineering fields, especially in electronics engineering, which includes radio frequency, microwave, electronics systems networks, 5G, 6G, and so on.
Author: C.K. Maiti
Publisher: CRC Press
ISBN: 1466503475
Category : Technology & Engineering
Languages : en
Pages : 311
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Book Description
Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.
Author: Carlos Galup-montoro
Publisher: World Scientific
ISBN: 9814477974
Category : Technology & Engineering
Languages : en
Pages : 445
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Book Description
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 306
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Book Description
Author: Rupam Goswami
Publisher: Springer Nature
ISBN: 981169124X
Category : Technology & Engineering
Languages : en
Pages : 313
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Book Description
This book covers evolution, concept and applications of modern semiconductor devices such as tunnel field effect transistors (TFETs), vertical super-thin body MOSFETs, ion sensing FETs (ISFETs), non-conventional solar cells, opto-electro mechanical devices and thin film transistors (TFTs). Comprising of theory, experimentation and applications of devices, the chapters describe state-of-art methods and techniques which shall be highly assistive in having an overall perspective on emerging technologies and working on a research area. The book is aimed at the scholars, enthusiasts and researchers who are currently working on devices in the contemporary era of semiconductor devices. Additionally, the chapters are lucid and descriptive and carry the potential of serving as a reference book for scholars in their undergraduate studies, who are looking ahead for a prospective career in semiconductor devices.
Author: Yong Liu
Publisher: Springer Science & Business Media
ISBN: 1461410525
Category : Technology & Engineering
Languages : en
Pages : 606
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Book Description
Power Electronic Packaging presents an in-depth overview of power electronic packaging design, assembly,reliability and modeling. Since there is a drastic difference between IC fabrication and power electronic packaging, the book systematically introduces typical power electronic packaging design, assembly, reliability and failure analysis and material selection so readers can clearly understand each task's unique characteristics. Power electronic packaging is one of the fastest growing segments in the power electronic industry, due to the rapid growth of power integrated circuit (IC) fabrication, especially for applications like portable, consumer, home, computing and automotive electronics. This book also covers how advances in both semiconductor content and power advanced package design have helped cause advances in power device capability in recent years. The author extrapolates the most recent trends in the book's areas of focus to highlight where further improvement in materials and techniques can drive continued advancements, particularly in thermal management, usability, efficiency, reliability and overall cost of power semiconductor solutions.
Author: Chandan Kumar Sarkar
Publisher: CRC Press
ISBN: 1466512660
Category : Technology & Engineering
Languages : en
Pages : 428
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Book Description
Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.
Author: Muhammad H. Rashid
Publisher: Elsevier
ISBN: 0080467652
Category : Technology & Engineering
Languages : en
Pages : 1189
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Book Description
Power electronics, which is a rapidly growing area in terms of research and applications, uses modern electronics technology to convert electric power from one form to another, such as ac-dc, dc-dc, dc-ac, and ac-ac with a variable output magnitude and frequency. Power electronics has many applications in our every day life such as air-conditioners, electric cars, sub-way trains, motor drives, renewable energy sources and power supplies for computers. This book covers all aspects of switching devices, converter circuit topologies, control techniques, analytical methods and some examples of their applications.* 25% new content* Reorganized and revised into 8 sections comprising 43 chapters* Coverage of numerous applications, including uninterruptable power supplies and automotive electrical systems* New content in power generation and distribution, including solar power, fuel cells, wind turbines, and flexible transmission
Author: Shichun Qu
Publisher: Springer
ISBN: 1493915568
Category : Technology & Engineering
Languages : en
Pages : 336
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Book Description
Analog and Power Wafer Level Chip Scale Packaging presents a state-of-art and in-depth overview in analog and power WLCSP design, material characterization, reliability and modeling. Recent advances in analog and power electronic WLCSP packaging are presented based on the development of analog technology and power device integration. The book covers in detail how advances in semiconductor content, analog and power advanced WLCSP design, assembly, materials and reliability have co-enabled significant advances in fan-in and fan-out with redistributed layer (RDL) of analog and power device capability during recent years. Since the analog and power electronic wafer level packaging is different from regular digital and memory IC package, this book will systematically introduce the typical analog and power electronic wafer level packaging design, assembly process, materials, reliability and failure analysis, and material selection. Along with new analog and power WLCSP development, the role of modeling is a key to assure successful package design. An overview of the analog and power WLCSP modeling and typical thermal, electrical and stress modeling methodologies is also presented in the book.
Author: An Chen
Publisher: John Wiley & Sons
ISBN: 1118447743
Category : Technology & Engineering
Languages : en
Pages : 570
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Book Description
Emerging Nanoelectronic Devices focuses on the future direction of semiconductor and emerging nanoscale device technology. As the dimensional scaling of CMOS approaches its limits, alternate information processing devices and microarchitectures are being explored to sustain increasing functionality at decreasing cost into the indefinite future. This is driving new paradigms of information processing enabled by innovative new devices, circuits, and architectures, necessary to support an increasingly interconnected world through a rapidly evolving internet. This original title provides a fresh perspective on emerging research devices in 26 up to date chapters written by the leading researchers in their respective areas. It supplements and extends the work performed by the Emerging Research Devices working group of the International Technology Roadmap for Semiconductors (ITRS). Key features: • Serves as an authoritative tutorial on innovative devices and architectures that populate the dynamic world of “Beyond CMOS” technologies. • Provides a realistic assessment of the strengths, weaknesses and key unknowns associated with each technology. • Suggests guidelines for the directions of future development of each technology. • Emphasizes physical concepts over mathematical development. • Provides an essential resource for students, researchers and practicing engineers.
