Molecular Beam Epitaxy of InAs, GaSb, AlSb Structures for Interband Cascade Devices PDF Download
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Author: Hao Ye
Publisher:
ISBN:
Category : Molecular beam epitaxy
Languages : en
Pages : 320
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Book Description
Author: Hao Ye
Publisher:
ISBN:
Category : Molecular beam epitaxy
Languages : en
Pages : 320
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Book Description
Author: Edward Morton Shaw
Publisher:
ISBN:
Category :
Languages : en
Pages : 104
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Book Description
Author: L.L. Chang
Publisher: Springer Science & Business Media
ISBN: 940095073X
Category : Technology & Engineering
Languages : en
Pages : 718
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Book Description
The NATO Advanced Study Institute on "Molecular Beam Epitaxy (MBE) and Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device Re search. This volume contains the lectures presented at the Institute. Throughout the history of semiconductor development, the coupling between processing techniques and device structures for both scientific investigations and technological applications has time and again been demonstrated. Newly conceived ideas usually demand the ultimate in existing techniques, which often leads to process innova tions. The emergence of a process, on the other hand, invariably creates opportunities for device improvement and invention. This intimate relationship between the two has most recently been witnessed in MBE and heterostructures, the subject of this Institute. This volume is divided into several sections. Chapter 1 serves as an introduction by providing a perspective of the subject. This is followed by two sections, each containing four chapters, Chapters 2-5 addressing the principles of the MBE process and Chapters 6-9 describ ing its use in the growth of a variety of semiconductors and heteros tructures. The next two sections, Chapters to-II and Chapters 12-15, treat the theory and the electronic properties of the heterostructures, respectively. The focus is on energy quantization of the two dimensional electron system. Chapters 16-17 are devoted to device structures, including both field-effect transistors and lasers and detec tors.
Author: Lee Michael Murray
Publisher:
ISBN:
Category : Antimony compounds
Languages : en
Pages : 107
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Book Description
InAs/GaSb superlattices are a material system well suited to growth via molecular beam epitaxy. The ability to tune the band gap over the entire mid and long wave infrared spectrum gives a large number of applications for devices made from InAs/GaSb superlattice material. The growth of high quality InAs/GaSb superlattice material requires a careful study of the parameters used during epitaxial growth. This work investigates the growth of tunnel junctions for InAs/GaSb based superlattice light emitting diodes, the presence of defects in GaSb homoepitaxial layers, and variations in the growth rate of InAs/GaSb superlattice samples.
Author: John Orton
Publisher: OUP Oxford
ISBN: 0191061166
Category : Science
Languages : en
Pages : 529
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Book Description
The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early âhome-madeâ variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called âlow-dimensional structuresâ (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Author: Sergey Kostyukevych
Publisher: SPIE-International Society for Optical Engineering
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 366
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Book Description
Proceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature.
Author:
Publisher:
ISBN:
Category : High power lasers
Languages : en
Pages : 356
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Book Description
Author: Robin F.C. Farrow
Publisher: Elsevier
ISBN: 0815518404
Category : Technology & Engineering
Languages : en
Pages : 795
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Book Description
In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
Author: North American Conference on Molecular Beam Epitaxy (16, 1997, Ann Arbor, Mich.)
Publisher:
ISBN: 9781563968211
Category :
Languages : en
Pages : 264
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Book Description
Author: Antoni Rogalski
Publisher: CRC Press
ISBN: 100054348X
Category : Science
Languages : en
Pages : 551
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Book Description
Detection of Optical Signals provides a comprehensive overview of important technologies for photon detection, from the X-ray through ultraviolet, visible, infrared to far-infrared spectral regions. It uniquely combines perspectives from many disciplines, particularly within physics and electronics, which are necessary to have a complete understanding of optical receivers. This interdisciplinary textbook aims to: Guide readers into more detailed and technical treatments of readout optical signals Give a broad overview of optical signal detection including terahertz region and two-dimensional material Help readers further their studies by offering chapter-end problems and recommended reading. This is an invaluable resource for graduate students in physics and engineering, as well as a helpful refresher for those already working with aerospace sensors and systems, remote sensing, thermal imaging, military imaging, optical telecommunications, infrared spectroscopy, and light detection.
