Molecular Beam Epitaxial Growth and Characterization of Gallium Antimonide, and Its Use in GaSb/AlSb Heterostructures PDF Download
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Author: Seshadri Subbanna
Publisher:
ISBN:
Category :
Languages : en
Pages : 276
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Author: Seshadri Subbanna
Publisher:
ISBN:
Category :
Languages : en
Pages : 276
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Author: M. O. Manasreh
Publisher: CRC Press
ISBN: 1000725308
Category : Technology & Engineering
Languages : en
Pages : 526
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Interest in antimonide-related heterostructures is burgeoning due to their applications as light sources, diode lasers, modulators, filters, switches, nonlinear optics, and field-defect transistors. This volume, featuring contributions from leading researchers in the field, is the first book to focus on antimonide-related topics. It offers to both the beginning student and the advanced researcher a comprehensive review of the state of the art in this exciting new area of research.
Author: John Frederick Klem
Publisher:
ISBN:
Category :
Languages : en
Pages : 252
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Author: Jen-Inn Chyi
Publisher:
ISBN:
Category :
Languages : en
Pages : 198
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Described in this thesis are the molecular beam epitaxial growth and characterization of InSb on GaAs substrates. The growth conditions and mechanisms of this highly lattice-mismatched system are detailed. Structural, electrical, and optical properties of the InSb epilayers are characterized by transmission electron microscopy (TEM), X-ray rocking curves, Hall measurements, photoluminescence (PL), and transmission measurements. The TEM study reveals pure edge-type, instead of the common 60$spcirc$-type, misfit dislocations at the InSb/GaAs interfaces. The reason for the formation of these misfit dislocations are given. Electrical measurements show that dislocation scattering is an important scattering mechanism in the epilayers. A charged dislocation scattering is proposed to explain the temperature and carrier concentration dependence of electron mobility. Low temperature PL shows a single band-edge transition similar to that of bulk InSb, indicating very little or no residual strain in the epilayers. Indium antimonide p$sp{+}$-n diodes have been successfully fabricated on as-grown and ion-implanted wafers. The electrical characteristics of these diodes compare favorably to those reported on similar devices. Further improvement can be achieved by proper surface passivation. Indium antimonide-Gallium arsenide p-n, p-p, and n-n heterojunctions have also been prepared for this study with all of the junctions exhibiting excellent rectifying characteristics. From capacitance-voltage measurements, the band offsets of InSb/GaAs junctions have been, for the first time, determined experimentally.
Author: David Constantine Radulescu
Publisher:
ISBN:
Category : Doped semiconductors
Languages : en
Pages : 578
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Author: Sukgeun Choi
Publisher:
ISBN:
Category :
Languages : en
Pages : 246
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: Vladimir Odnoblyudov
Publisher:
ISBN:
Category :
Languages : en
Pages : 148
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Nitrogen incorporation into GaAs has received much attention in the last decade, because of its application to long-wavelength lasers. However, nitrogen incorporation into GaP (100) has not received much attention to date despite the promising application of this material system to yellow-amber-red light-emitting diodes. In order to investigate the not yet well-studied (Al, In, Ga)NP material system, we use gas-source molecular beam (MBE), in which nitrogen radicals are used as nitrogen precursor, to grow these mixed group-V alloy semiconductors with excellent crystallinity. This dissertation is divided into two major parts. In the first part we describe the growth and characterization of the (Al, In, Ga)NP material system. Optical and structural properties of GaNP bulk layers, AlGaNP bulk layers, and InGaNP quantum wells are studied. The dependence of the GaNP band gap vs. nitrogen concentration and temperature dependent PL are analyzed. For AlGaNP layers, using a thermodynamic approach we explain the difference between nitrogen incorporation into GaP and AlP. The dependence of the emission wavelength vs. nitrogen and indium compositions is studied for InGaNP QWs. The electron effective mass is determined for InGaNP materials with different indium concentration. The conduction and valence band offsets are calculated for the InGaNP/GaP heterojunction. In the second part, we describe LED chip fabrication and contacts optimization. development of n-type and p-type contacts is discussed. A description of LED chip processing optimization is given for a p-i-n diode structure. The band offsets are compared for (Al, In, Ga)NP-based LED structures and conventional AlInGaP-based LED structures; they are 2-3 times higher in LEDs based on the (Al, In, Ga)NP material system. Growth and fabrication results for bulk GaNP-based amber LEDs are discussed. Color stability (electroluminescence peak wavelength shift vs. current) is compared for GaNPbased LEDs and AlInGaP-based LEDs; the wavelength shift of (Al, In, Ga)NP-based LED chips is ~ 6 times less than that of AlInGaP-based LED chips, in the drive current range of 10 - 60 mA. The influence of In concentration in InGaNP QWs on EL properties of LED chips is reported. Single and multiple InGaNP QW-based LEDs are studied.
Author: David Andrew Woolf
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1058
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