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Author: Souvik Mahapatra
Publisher: Springer Nature
ISBN: 9811661200
Category : Technology & Engineering
Languages : en
Pages : 322
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Book Description
This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses: Ultra-fast measurements and modelling of parametric drift due to NBTI in different transistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs and GAA-SNS p-FETs, with Silicon and Silicon Germanium channels. BTI Analysis Tool (BAT), a comprehensive physics-based framework, to model the measured time kinetics of parametric drift during and after DC and AC stress, at different stress and recovery biases and temperature, as well as pulse duty cycle and frequency. The Reaction Diffusion (RD) model is used for generated interface traps, Transient Trap Occupancy Model (TTOM) for charge occupancy of the generated interface traps and their contribution, Activated Barrier Double Well Thermionic (ABDWT) model for hole trapping in pre-existing bulk gate insulator traps, and Reaction Diffusion Drift (RDD) model for bulk trap generation in the BAT framework; NBTI parametric drift is due to uncorrelated contributions from the trap generation (interface, bulk) and trapping processes. Analysis and modelling of Nitrogen incorporation into the gate insulator, Germanium incorporation into the channel, and mechanical stress effects due to changes in the transistor layout or device dimensions; similarities and differences of (100) surface dominated planar and GAA MOSFETs and (110) sidewall dominated FinFETs are analysed.
Author: Tibor Grasser
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Souvik Mahapatra
Publisher: Springer Nature
ISBN: 9811661200
Category : Technology & Engineering
Languages : en
Pages : 322
Get Book Here
Book Description
This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses: Ultra-fast measurements and modelling of parametric drift due to NBTI in different transistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs and GAA-SNS p-FETs, with Silicon and Silicon Germanium channels. BTI Analysis Tool (BAT), a comprehensive physics-based framework, to model the measured time kinetics of parametric drift during and after DC and AC stress, at different stress and recovery biases and temperature, as well as pulse duty cycle and frequency. The Reaction Diffusion (RD) model is used for generated interface traps, Transient Trap Occupancy Model (TTOM) for charge occupancy of the generated interface traps and their contribution, Activated Barrier Double Well Thermionic (ABDWT) model for hole trapping in pre-existing bulk gate insulator traps, and Reaction Diffusion Drift (RDD) model for bulk trap generation in the BAT framework; NBTI parametric drift is due to uncorrelated contributions from the trap generation (interface, bulk) and trapping processes. Analysis and modelling of Nitrogen incorporation into the gate insulator, Germanium incorporation into the channel, and mechanical stress effects due to changes in the transistor layout or device dimensions; similarities and differences of (100) surface dominated planar and GAA MOSFETs and (110) sidewall dominated FinFETs are analysed.
Author: Souvik Mahapatra
Publisher:
ISBN: 9789811661211
Category :
Languages : en
Pages : 0
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Book Description
This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses: Ultra-fast measurements and modelling of parametric drift due to NBTI in different transistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs and GAA-SNS p-FETs, with Silicon and Silicon Germanium channels. BTI Analysis Tool (BAT), a comprehensive physics-based framework, to model the measured time kinetics of parametric drift during and after DC and AC stress, at different stress and recovery biases and temperature, as well as pulse duty cycle and frequency. The Reaction Diffusion (RD) model is used for generated interface traps, Transient Trap Occupancy Model (TTOM) for charge occupancy of the generated interface traps and their contribution, Activated Barrier Double Well Thermionic (ABDWT) model for hole trapping in pre-existing bulk gate insulator traps, and Reaction Diffusion Drift (RDD) model for bulk trap generation in the BAT framework; NBTI parametric drift is due to uncorrelated contributions from the trap generation (interface, bulk) and trapping processes. Analysis and modelling of Nitrogen incorporation into the gate insulator, Germanium incorporation into the channel, and mechanical stress effects due to changes in the transistor layout or device dimensions; similarities and differences of (100) surface dominated planar and GAA MOSFETs and (110) sidewall dominated FinFETs are analysed.
Author: Tibor Grasser
Publisher: Springer Science & Business Media
ISBN: 1461479096
Category : Technology & Engineering
Languages : en
Pages : 805
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Book Description
This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.
Author: Robert Entner
Publisher:
ISBN: 9783836459976
Category : Field-effect transistors
Languages : en
Pages : 126
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Book Description
Semiconductor process and device simulators are well established tools for the reduction of the development time for semiconductor devices. Nowadays simulation efforts go beyond solving the basic semiconductor device equations. Especially the modeling and simulation of aging processes has tremendously gained in importance. This book gives insight into the topic of semiconductor device simulation and focuses on the modeling of degradation mechanisms. Negative bias temperature instability (NBTI) causes degradation of MOS structures at elevated temperatures and negative gate voltages. An elaborate investigation of literature from the first report to the recent understanding of this degradation mechanism is presented. A comprehensive model is derived, combining research results from different groups and the coupling to the basic semiconductor device equations. The new NBTI model is compared to measurement data and gives excellent results. This book is addressed to researchers in the field of semiconductor process development but also recommended to engineers in IC design to strengthen their understanding for device degradation.
Author: Sudheer Padala
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 64
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Book Description
Negative Bias Temperature Instability (NBTI) is commonly seen in p-channel transistors under negative gate voltages at an elevated temperature. The interface traps, oxide traps and NBTI mechanisms are discussed and their effect on circuit degradation and results are discussed. This thesis focuses on developing a model for simulating impact of NBTI effects at circuit level. The model mimics the effects of degradation caused by the defects. The NBTI model developed in this work is validated and sanity checked by using the simulation data from silvaco and gives excellent results. Furthermore the susceptibility of CMOS circuits such as the CMOS inverter, and a ring oscillator to NBTI is investigated. The results show that the oscillation frequency of a ring oscillator decreases and the SET pulse broadens with the NBTI.
Author: Souvik Mahapatra
Publisher: Springer
ISBN: 8132225082
Category : Technology & Engineering
Languages : en
Pages : 282
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Book Description
This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.
Author: Paul H Frampton
Publisher: World Scientific
ISBN: 9814518379
Category : Science
Languages : en
Pages : 559
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Book Description
This is an excellent book on dual model and string theories. This updated issue of the author's book ‘Dual Resonance Models’ has new chapters on string theories added to it. This new volume therefore provides much background on the non-symmetrical aspects as well as modern development in the theory of strong interactions. This is a must for high energy physicists.
Author: Dorel Banabic
Publisher: Springer Science & Business Media
ISBN: 3540881131
Category : Technology & Engineering
Languages : en
Pages : 312
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Book Description
The concept of virtual manufacturing has been developed in order to increase the industrial performances, being one of the most ef cient ways of reducing the m- ufacturing times and improving the quality of the products. Numerical simulation of metal forming processes, as a component of the virtual manufacturing process, has a very important contribution to the reduction of the lead time. The nite element method is currently the most widely used numerical procedure for s- ulating sheet metal forming processes. The accuracy of the simulation programs used in industry is in uenced by the constitutive models and the forming limit curves models incorporated in their structure. From the above discussion, we can distinguish a very strong connection between virtual manufacturing as a general concept, ?nite element method as a numerical analysis instrument and constitutive laws,aswellas forming limit curves as a speci city of the sheet metal forming processes. Consequently, the material modeling is strategic when models of reality have to be built. The book gives a synthetic presentation of the research performed in the eld of sheet metal forming simulation during more than 20 years by the members of three international teams: the Research Centre on Sheet Metal Forming—CERTETA (Technical University of Cluj-Napoca, Romania); AutoForm Company from Zürich, Switzerland and VOLVO automotive company from Sweden. The rst chapter presents an overview of different Finite Element (FE) formu- tions used for sheet metal forming simulation, now and in the past.
Author: Joseph B. Bernstein
Publisher: John Wiley & Sons
ISBN: 1394210930
Category : Technology & Engineering
Languages : en
Pages : 404
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Book Description
RELIABILITY PREDICTION FOR MICROELECTRONICS Wiley Series in Quality & Reliability Engineering REVOLUTIONIZE YOUR APPROACH TO RELIABILITY ASSESSMENT WITH THIS GROUNDBREAKING BOOK Reliability evaluation is a critical aspect of engineering, without which safe performance within desired parameters over the lifespan of machines cannot be guaranteed. With microelectronics in particular, the challenges to evaluating reliability are considerable, and statistical methods for creating microelectronic reliability standards are complex. With nano-scale microelectronic devices increasingly prominent in modern life, it has never been more important to understand the tools available to evaluate reliability. Reliability Prediction for Microelectronics meets this need with a cluster of tools built around principles of reliability physics and the concept of remaining useful life (RUL). It takes as its core subject the ‘physics of failure’, combining a thorough understanding of conventional approaches to reliability evaluation with a keen knowledge of their blind spots. It equips engineers and researchers with the capacity to overcome decades of errant reliability physics and place their work on a sound engineering footing. Reliability Prediction for Microelectronics readers will also find: Focus on the tools required to perform reliability assessments in real operating conditions Detailed discussion of topics including failure foundation, reliability testing, acceleration factor calculation, and more New multi-physics of failure on DSM technologies, including TDDB, EM, HCI, and BTI Reliability Prediction for Microelectronics is ideal for reliability and quality engineers, design engineers, and advanced engineering students looking to understand this crucial area of product design and testing.
