Author: David Allen Sunderland
Publisher:
ISBN:
Category :
Languages : en
Pages : 536
Book Description
Modeling, Fabrication and Characterization of Pnp Heterojunction Bipolar Transistors
Author: David Allen Sunderland
Publisher:
ISBN:
Category :
Languages : en
Pages : 536
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 536
Book Description
Fabrication, Characterization and Modeling of NPN InGaP/GaAs Heterojunction Bipolar Transistors
Author: Ying Wu
Publisher:
ISBN:
Category :
Languages : en
Pages : 370
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 370
Book Description
The Fabrication and Characterization of InP-based Heterojunction Bipolar Transistors
Author: James C. Vlcek
Publisher:
ISBN:
Category :
Languages : en
Pages : 380
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 380
Book Description
Large-signal Characterization and Modeling of the Heterojunction Bipolar Transistor
Author: Douglas Andrew Teeter
Publisher:
ISBN:
Category :
Languages : en
Pages : 546
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 546
Book Description
Modeling and Characterization of Abrupt Heterojunction Bipolar Transistors
Author: Kyounghoon Yang
Publisher:
ISBN:
Category :
Languages : en
Pages : 396
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 396
Book Description
Simulation, Design, and Fabrication of InP-based Pnp Heterojunction Bipolar Transistors
Author: Suman Datta
Publisher:
ISBN:
Category :
Languages : en
Pages : 552
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 552
Book Description
AlSb-InAs-AlSb PnP Double-heterojunction Bipolar Transistors
Author: John Joseph Pekarik
Publisher:
ISBN:
Category :
Languages : en
Pages : 216
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 216
Book Description
Heterojunction Bipolar Transistors for Circuit Design
Author: Jianjun Gao
Publisher: John Wiley & Sons
ISBN: 1118921542
Category : Technology & Engineering
Languages : en
Pages : 280
Book Description
A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods
Publisher: John Wiley & Sons
ISBN: 1118921542
Category : Technology & Engineering
Languages : en
Pages : 280
Book Description
A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods
Design, Fabrication, Characterization and Simulation of High Performance Npn InGaP/GaAs Heterojunction Bipolar Phototransistors and Heterojunction Bipolar Transistors
Author: Ravi Sridhara
Publisher:
ISBN:
Category :
Languages : en
Pages : 612
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 612
Book Description
Large Signal Characterization and Modeling of Heterojunction Bipolar Transistors
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 29
Book Description
The high power operation of the heterojunction bipolar transistor (HBT) has been analyzed by experimentally determining the junction temperature and separating temperature effects from other high power effects. In addition, an HBT large signal model has been developed that is valid for the linear, saturation, and cutoff regions, with low frequency temperature effects included. This model has been implemented in a commercial harmonic balance simulator, LIBRA from EEsof, making it particularly suitable for the design and simulation of HBT microwave power integrated circuits. In addition, an analysis of the most temperature-sensitive microwave elements for the HBT has been performed using measured s-parameter data at five elevated temperatures from 23 deg. C to 226 deg. C. The element values were compared to a physical model showing excellent agreement in magnitude and direction of change with temperature and bias. The transistor cutoff frequencies were also measured and calculated, showing a monotonic decrease with temperature of approximately 50% over the 200 deg. C range. Heterojunction Bipolar Transistor, Large Signal Modeling, Thermal Effects.
Publisher:
ISBN:
Category :
Languages : en
Pages : 29
Book Description
The high power operation of the heterojunction bipolar transistor (HBT) has been analyzed by experimentally determining the junction temperature and separating temperature effects from other high power effects. In addition, an HBT large signal model has been developed that is valid for the linear, saturation, and cutoff regions, with low frequency temperature effects included. This model has been implemented in a commercial harmonic balance simulator, LIBRA from EEsof, making it particularly suitable for the design and simulation of HBT microwave power integrated circuits. In addition, an analysis of the most temperature-sensitive microwave elements for the HBT has been performed using measured s-parameter data at five elevated temperatures from 23 deg. C to 226 deg. C. The element values were compared to a physical model showing excellent agreement in magnitude and direction of change with temperature and bias. The transistor cutoff frequencies were also measured and calculated, showing a monotonic decrease with temperature of approximately 50% over the 200 deg. C range. Heterojunction Bipolar Transistor, Large Signal Modeling, Thermal Effects.