Fundamentals of Tunnel Field-Effect Transistors PDF Download
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Author: Sneh Saurabh
Publisher: CRC Press
ISBN: 1315350262
Category : Science
Languages : en
Pages : 216
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Book Description
During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.
Author: Sneh Saurabh
Publisher: CRC Press
ISBN: 1315350262
Category : Science
Languages : en
Pages : 216
Get Book Here
Book Description
During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.
Author: Iraj Sadegh Amiri
Publisher: Springer
ISBN: 9811065500
Category : Technology & Engineering
Languages : en
Pages : 92
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Book Description
This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs). The application of Gauss’s law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this, simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors.
Author: Amit Chaudhry
Publisher: Springer Science & Business Media
ISBN: 1461468221
Category : Technology & Engineering
Languages : en
Pages : 211
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Book Description
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Author: Brinda Bhowmick
Publisher: Cambridge Scholars Publishing
ISBN: 1527507041
Category : Technology & Engineering
Languages : en
Pages : 136
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Book Description
This book covers the physical principles, modelling, fabrication and applications of Tunnel Field Effect Transistors (TFETs) and Fin Field Effect Transistors (FinFETs). This is intended to act as a reference for undergraduate, postgraduate and research scholars belonging to backgrounds of Applied Physics, Electrical and Electronics Engineering and Material Science. Of paramount importance is the need to understand the simulation aspects of these devices, the validity of mathematical models, basics on fabrication and details of applications of these nanoscale devices. The presentation of the book assumes that the reader has fundamental concepts of semiconductor device physics and electronic circuits. A course such as the one this book is intended to accompany and motivate both students and scholars to get involved in the research on TFETs and FinFETs. Further, this book can act as a reference for device engineers and scientists who need to get updated information on device and technological developments.
Author: Nguyen Thanh Tien
Publisher: World Scientific
ISBN: 9811267952
Category : Science
Languages : en
Pages : 605
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Book Description
Graphene-like materials have attracted considerable interest in the fields of condensed-matter physics, chemistry, and materials science due to their interesting properties as well as the promise of a broad range of applications in energy storage, electronic, optoelectronic, and photonic devices.The contents present the diverse phenomena under development in the grand quasiparticle framework through the first-principles calculations. The critical mechanisms, the orbital hybridizations and spin configurations of graphene-like materials through the chemical adsorptions, intercalations, substitutions, decorations, and heterojunctions, are taken into account. Specifically, the hydrogen-, oxygen-, transition-metal- and rare-earth-dependent compounds are thoroughly explored for the unusual spin distributions. The developed theoretical framework yields concise physical, chemical, and material pictures. The delicate evaluations are thoroughly conducted on the optimal lattices, the atom- and spin-dominated energy bands, the orbital-dependent sub-envelope functions, the spatial charge distributions, the atom- orbital- and spin-projected density of states, the spin densities, the magnetic moments, and the rich optical excitations. All consistent quantities are successfully identified by the multi-orbital hybridizations in various chemical bonds and guest- and host-induced spin configurations.The scope of the book is sufficiently broad and deep in terms of the geometric, electronic, magnetic, and optical properties of 3D, 2D, 1D, and 0D graphene-like materials with different kinds of chemical modifications. How to evaluate and analyze the first-principles results is discussed in detail. The development of the theoretical framework, which can present the diversified physical, chemical, and material phenomena, is obviously illustrated for each unusual condensed-matter system. To achieve concise physical and chemical pictures, the direct and close combinations of the numerical simulations and the phenomenological models are made frequently available via thorough discussions. It provides an obvious strategy for the theoretical framework, very useful for science and engineering communities.
Author: Bharat Bhushan
Publisher: Springer
ISBN: 3662543575
Category : Technology & Engineering
Languages : en
Pages : 1704
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Book Description
This comprehensive handbook has become the definitive reference work in the field of nanoscience and nanotechnology, and this 4th edition incorporates a number of recent new developments. It integrates nanofabrication, nanomaterials, nanodevices, nanomechanics, nanotribology, materials science, and reliability engineering knowledge in just one volume. Furthermore, it discusses various nanostructures; micro/nanofabrication; micro/nanodevices and biomicro/nanodevices, as well as scanning probe microscopy; nanotribology and nanomechanics; molecularly thick films; industrial applications and nanodevice reliability; societal, environmental, health and safety issues; and nanotechnology education. In this new edition, written by an international team of over 140 distinguished experts and put together by an experienced editor with a comprehensive understanding of the field, almost all the chapters are either new or substantially revised and expanded, with new topics of interest added. It is an essential resource for anyone working in the rapidly evolving field of key technology, including mechanical and electrical engineers, materials scientists, physicists, and chemists.
Author: Razali Ismail
Publisher: CRC Press
ISBN: 1351833073
Category : Science
Languages : en
Pages : 459
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Book Description
While theories based on classical physics have been very successful in helping experimentalists design microelectronic devices, new approaches based on quantum mechanics are required to accurately model nanoscale transistors and to predict their characteristics even before they are fabricated. Advanced Nanoelectronics provides research information on advanced nanoelectronics concepts, with a focus on modeling and simulation. Featuring contributions by researchers actively engaged in nanoelectronics research, it develops and applies analytical formulations to investigate nanoscale devices. The book begins by introducing the basic ideas related to quantum theory that are needed to better understand nanoscale structures found in nanoelectronics, including graphenes, carbon nanotubes, and quantum wells, dots, and wires. It goes on to highlight some of the key concepts required to understand nanotransistors. These concepts are then applied to the carbon nanotube field effect transistor (CNTFET). Several chapters cover graphene, an unzipped form of CNT that is the recently discovered allotrope of carbon that has gained a tremendous amount of scientific and technological interest. The book discusses the development of the graphene nanoribbon field effect transistor (GNRFET) and its use as a possible replacement to overcome the CNT chirality challenge. It also examines silicon nanowire (SiNW) as a new candidate for achieving the downscaling of devices. The text describes the modeling and fabrication of SiNW, including a new top-down fabrication technique. Strained technology, which changes the properties of device materials rather than changing the device geometry, is also discussed. The book ends with a look at the technical and economic challenges that face the commercialization of nanoelectronics and what universities, industries, and government can do to lower the barriers. A useful resource for professionals, researchers, and scientists, this work brings together state-of-the-art technical and scientific information on important topics in advanced nanoelectronics.
Author: Dhanasekaran Vikraman
Publisher: BoD – Books on Demand
ISBN: 1789234166
Category : Technology & Engineering
Languages : en
Pages : 168
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Book Description
In recent years, research on microelectronics has been specifically focused on the proposition of efficient alternative methodologies and materials to fabricate feasible integrated circuits. This book provides a general background of thin film transistors and their simulations and constructions. The contents of the book are broadly classified into two topics: design and simulation of FETs and construction of FETs. All the authors anticipate that the provided chapters will act as a single source of reference for the design, simulation and construction of FETs. This edited book will help microelectronics researchers with their endeavors and would be a great addition to the realm of semiconductor physics.
Author: Sulaiman Wadi Harun
Publisher: John Wiley & Sons
ISBN: 1119469813
Category : Technology & Engineering
Languages : en
Pages : 518
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Book Description
The eighth volume in a series of handbooks on graphene research and applications The Handbook of Graphene, Volume 8: Technology and Innovations discusses the role of graphene-based applications in technological advancements. Topics include graphene materials used in circuit board repairs; RFID antenna and sensor fabrication; and wearable healthcare electronics. Chapters present detailed information on: modeling methods used in graphene research; applications of graphene-on-silicon photonic integrated circuits; the development of graphene for engineering applications; and other graphene subjects of interest to scientists, chemists and physicists.
Author: Trupti Ranjan Lenka
Publisher: Springer Nature
ISBN: 9811637679
Category : Technology & Engineering
Languages : en
Pages : 496
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Book Description
The book presents select proceedings of the International Conference on Micro and Nanoelectronics Devices, Circuits and Systems (MNDCS-2021). The volume includes cutting-edge research papers in the emerging fields of micro and nanoelectronics devices, circuits, and systems from experts working in these fields over the last decade. The book is a unique collection of chapters from different areas with a common theme and will be immensely useful to academic researchers and practitioners in the industry who work in this field.
