Millimeter-wave Wideband MSK Receiver and Transmitter in CMOS

Millimeter-wave Wideband MSK Receiver and Transmitter in CMOS PDF Author: Shenggang Dong
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 0

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Book Description
The sub-terahertz portion of the electromagnetic spectrum can provide a large bandwidth for both wireless communication and wireline communication using dielectric waveguides. To fully exploit the bandwidth, the communication systems inevitably require frequency division multiplexing. Since integrating a highly frequency-selective multiplexer and a de-multiplexer is challenging at these frequencies, use of MSK (Minimum Shift Keying) modulation with reduced out-of-band emission is a potential approach to alleviate this technical challenge. Furthermore, MSK is a constant envelope modulation and allows more power efficient operation of transmitters. This is particularly important at sub-terahertz frequencies, where the power efficiency of circuits is low. Lastly, MSK signals can be demodulated using a phase locked loop (PLL) based receiver that tracks the carrier frequency of signals incident to a receiver, which greatly relaxes the frequency synchronization requirements in both transmitter and receiver. PLL-based receivers are also simple to implement. Although MSK signals have such merits for sub-THz communication, the previously reported carrier frequency of Gilbert-mixer-based MSK transmitters is lower than 60 GHz and data rate lower than 2 Gbps. The maximum data rate of PLL-based receivers is 10’s of Mbps. Increasing the data rate of PLL-based receiver and generation of high-data rate MSK signals are the main topics of this dissertation. First, a 180-GHz MSK receiver using a phase-locked loop (PLL), which self-synchronizes carrier frequency is demonstrated. The mixer first receiver is fabricated in a 65-nm CMOS process. A double balanced anti-parallel-diode-pair sub-harmonic mixer performs the phase detection, reducing the frequency of LO by half. Tunable zeros realized by series inductors are used to improve the stability and to increase the data rate handling capability. Without external LO synchronization, the receiver demodulates MSK signals at 10 Gbps with a bit error rate (BER) of

Millimeter-wave Wideband MSK Receiver and Transmitter in CMOS

Millimeter-wave Wideband MSK Receiver and Transmitter in CMOS PDF Author: Shenggang Dong
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 0

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Book Description
The sub-terahertz portion of the electromagnetic spectrum can provide a large bandwidth for both wireless communication and wireline communication using dielectric waveguides. To fully exploit the bandwidth, the communication systems inevitably require frequency division multiplexing. Since integrating a highly frequency-selective multiplexer and a de-multiplexer is challenging at these frequencies, use of MSK (Minimum Shift Keying) modulation with reduced out-of-band emission is a potential approach to alleviate this technical challenge. Furthermore, MSK is a constant envelope modulation and allows more power efficient operation of transmitters. This is particularly important at sub-terahertz frequencies, where the power efficiency of circuits is low. Lastly, MSK signals can be demodulated using a phase locked loop (PLL) based receiver that tracks the carrier frequency of signals incident to a receiver, which greatly relaxes the frequency synchronization requirements in both transmitter and receiver. PLL-based receivers are also simple to implement. Although MSK signals have such merits for sub-THz communication, the previously reported carrier frequency of Gilbert-mixer-based MSK transmitters is lower than 60 GHz and data rate lower than 2 Gbps. The maximum data rate of PLL-based receivers is 10’s of Mbps. Increasing the data rate of PLL-based receiver and generation of high-data rate MSK signals are the main topics of this dissertation. First, a 180-GHz MSK receiver using a phase-locked loop (PLL), which self-synchronizes carrier frequency is demonstrated. The mixer first receiver is fabricated in a 65-nm CMOS process. A double balanced anti-parallel-diode-pair sub-harmonic mixer performs the phase detection, reducing the frequency of LO by half. Tunable zeros realized by series inductors are used to improve the stability and to increase the data rate handling capability. Without external LO synchronization, the receiver demodulates MSK signals at 10 Gbps with a bit error rate (BER) of

Sub-millimeter Wave Wideband CMOS Receivers

Sub-millimeter Wave Wideband CMOS Receivers PDF Author: Ibukunoluwa Adedapo Momson
Publisher:
ISBN:
Category : Radio
Languages : en
Pages :

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Book Description
The increasing bandwidth of silicon integrated circuits technology has enabled generation of carrier signals at sub-millimeter wave frequencies (greater than 300 GHz), where the narrow fractional bandwidth of carriers translates to large absolute coherence bandwidths. These high frequency carriers and the associated wide coherence bandwidths can make possible high data rate wireless and dielectric waveguide communications. By combining multiple sub-millimeter wave carrier bands (frequency division multiplexing), it is possible to use this portion of the spectrum for even higher bandwidth communication. The transceivers for these applications require only electronic components fabricated in conventional silicon technologies, thus bypassing the complexity of alternative high data rate communication technologies such as photonics that require integration of optical lasers fabricated using III-V technologies. However, implementing a free-space wireless link with sub-millimeter wave carriers is subject to a limited capacity. The transmitted signal in the ideal case experiences attenuation that is inversely proportional to the square of the communication distance. Furthermore, despite the improvement in cut-off frequencies of modern devices, realizing fundamental power gain from active devices at sub-millimeter wave frequencies to provide sufficient transmitted power especially with good power efficiency is still challenging in current silicon technologies. The receiver sensitivity also degrades with operating frequency. These factors ultimately limit the capacity of a sub-millimeter wave wireless communications link because they limit the realizable signal-to-noise ratio of the signal at the receiver output. One way to mitigate these limitations, like in optical fiber communications, is to use a waveguide channel to confine and propagate the modulated carriers to increase the power incident to a receiver. This makes sub-millimeter wave carriers notable candidates for wireline applications. The 315-GHz fully integrated minimum shift keying receiver (MSK) presented in this work can be used for up to 10-Gbps wireline communications at a sensitivity of -21 dBm, requiring 195 mW of power. The receiver tracks the input carrier frequency for synchronization using a phase locked loop receiver architecture. The operating frequency of 315 GHz is the highest for an MSK receiver and for a phase locked loop based receiver that tracks the input signal frequency. To improve sensitivity of receivers, minimizing the receiver noise figure is essential. A 425-to-25 GHz integrated down-converting front-end also presented in this work achieves a noise figure of 17 dB which is the lowest reported for silicon NMOS and SiGe HBT receivers operating above 400 GHz. This is 18 dB lower than the previous minimum noise figure reported around these frequencies. The down-converter is based on a second-order subharmonic push-push mixer and incorporates a hybrid architecture to suppress second harmonic emissions of the local oscillator signal. The down-converter consumes 190 mW of power. This work also demonstrates that a passive switching mixer can have an available output noise power spectral density less than kT, which can make its noise figure less than its conversion loss.

Digitally Assisted, Fully Integrated, Wideband Transmitters for High-Speed Millimeter-Wave Wireless Communication Links

Digitally Assisted, Fully Integrated, Wideband Transmitters for High-Speed Millimeter-Wave Wireless Communication Links PDF Author: David del Rio
Publisher: Springer
ISBN: 3319932810
Category : Technology & Engineering
Languages : en
Pages : 269

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Book Description
This book presents design methods and considerations for digitally-assisted wideband millimeter-wave transmitters. It addresses comprehensively both RF design and digital implementation simultaneously, in order to design energy- and cost-efficient high-performance transmitters for mm-wave high-speed communications. It covers the complete design flow, from link budget assessment to the transistor-level design of different RF front-end blocks, such as mixers and power amplifiers, presenting different alternatives and discussing the existing trade-offs. The authors also analyze the effect of the imperfections of these blocks in the overall performance, while describing techniques to correct and compensate for them digitally. Well-known techniques are revisited, and some new ones are described, giving examples of their applications and proving them in real integrated circuits.

Design of CMOS RFIC Ultra-Wideband Impulse Transmitters and Receivers

Design of CMOS RFIC Ultra-Wideband Impulse Transmitters and Receivers PDF Author: Cam Nguyen
Publisher: Springer
ISBN: 3319531077
Category : Technology & Engineering
Languages : en
Pages : 118

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Book Description
This book presents the design of ultra-wideband (UWB) impulse-based transmitter and receiver frontends, operating within the 3.1-10.6 GHz frequency band, using CMOS radio-frequency integrated-circuits (RFICs). CMOS RFICs are small, cheap, low power devices, better suited for direct integration with digital ICs as compared to those using III-V compound semiconductor devices. CMOS RFICs are thus very attractive for RF systems and, in fact, the principal choice for commercial wireless markets. The book comprises seven chapters. The first chapter gives an introduction to UWB technology and outlines its suitability for high resolution sensing and high-rate, short-range ad-hoc networking and communications. The second chapter provides the basics of CMOS RFICs needed for the design of the UWB RFIC transmitter and receiver presented in this book. It includes the design fundamentals, lumped and distributed elements for RFIC, layout, post-layout simulation, and measurement. The third chapter discusses the basics of UWB systems including UWB advantages and applications, signals, basic modulations, transmitter and receiver frontends, and antennas. The fourth chapter addresses the design of UWB transmitters including an overview of basic components, design of pulse generator, BPSK modulator design, and design of a UWB tunable transmitter. Chapter 5 presents the design of UWB receivers including the design of UWB low-noise amplifiers, correlators, and a UWB 1 receiver. Chapter 6 covers the design of a UWB uniplanar antenna. Finally, a summary and conclusion is given in Chapter 7.

Near Millimeter Wave CMOS Receiver and Transmitter

Near Millimeter Wave CMOS Receiver and Transmitter PDF Author: Qian Zhong
Publisher:
ISBN:
Category : Metal oxide semiconductors, Complementary
Languages : en
Pages :

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Book Description
Electromagnetic waves in the millimeter (mm) and sub-millimeter wave (sub-mm) frequency ranges have caught a lot of attention. The waves at these frequencies can interact with gas molecules possessing dipole moments and change their rotational states. This phenomenon can be utilized for fast scan rotational spectroscopy to detect gas molecules and measure their concentrations. Rotational spectrometers have a wide range of applications including indoor air quality monitoring, detection of harmful gas leaks, breath analyses for monitoring bodily conditions and many others. At the mm and sub-mm wave frequencies, a large bandwidth is available for extremely high data rate communication. Communication over a dielectric waveguide at these frequencies with a loss less than 10dB/m has been proposed to mitigate the complexity of communication over copper wires as well as the integration challenges for optical communication that are being developed to meet the ever-increasing bandwidth demand. The advances of complementary metal-oxide-semiconductor (CMOS) technology have enabled the implementation of mm-wave and sub-mm wave frequency circuits with reduced cost and increased system integration and complexity. A receiver with a radio frequency front-end bandwidth of 95 GHz and noise figure of 13.9 -19 dB for a rotational spectrometer is demonstrated in 65-nm CMOS. In addition, a 300-GHz QPSK transmitter with a 30-Gbps data rate is demonstrated that consumes 180mW for dielectric waveguide communication. The system level tradeoff of a receiver for rotational spectroscopy is first analyzed with a focus on the noise mechanism. A detailed signal-noise interaction derivation due to a 2nd order non-linearity is presented and signal to noise ratio degradation is shown for different modulation scenarios. A receiver front-end using a broadband antenna backed by a phase compensated artificial magnetic conductor reflector, a floating body antiparallel diode pair as the mixing device and a multi-mode isolated broadband hybrid is demonstrated. The receiver also includes an on-chip LO generator using frequency multipliers and capacitive neutralized power amplifiers, an IF cascode low noise amplifier and a baseband power detector. The receiver exhibits a responsivity of 400-1200 kV/W and noise equivalent power of 0.4 to 1.2 pW/√Hz at 225 to 280 GHz. Detection of Ethanol, Propionitrile (EtCN), Acetonitrile (CH3CN) and Acetone in a mixture is demonstrated using the receiver in a rotational spectroscopy setup. This is the first demonstration that a CMOS receiver can be used for rotational spectroscopy and that a CMOS integrated circuit can support an existing application at frequencies above 200 GHz. A heterodyne transmitter with a current mode logic modulator, a multi-stage constant gain and group delay wideband data buffer using coupled resonators, a double balance passive up-conversion mixer using a Marchand balun which acts as built-in LO spur traps, and a quadrature oscillator with quadrature calibration are demonstrated. The transmitter generates the required RF power for the system of -6 dBm and supports a maximum data rate of 30Gbps while consuming 180mW of power resulting in an energy efficiency of 6 pJ/bit. The single channel data rate is almost 2X higher than that of the previously reported CMOS QPSK transmitter and the energy efficiency is among the highest of CMOS QPSK transmitters operating at the similar frequency range.

Low-Power Millimeter Wave Transmitters for High Data Rate Applications

Low-Power Millimeter Wave Transmitters for High Data Rate Applications PDF Author: Khaled Khalaf
Publisher: Springer
ISBN: 3030166538
Category : Technology & Engineering
Languages : en
Pages : 109

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Book Description
This book discusses low power techniques for millimeter wave transmitter IC. Considerations for the front-end design are followed by several implementation examples in the 60GHz band in CMOS down to 28nm technology. Additionally, the design and implementation details of digitally-modulated millimeter wave polar transmitters are presented.

CMOS Mm-wave Transceivers for Gbps Wireless Communication*Project Supported in Part by the National Natural Science Foundation of China (No. 61331003).

CMOS Mm-wave Transceivers for Gbps Wireless Communication*Project Supported in Part by the National Natural Science Foundation of China (No. 61331003). PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

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Book Description
Abstract: The challenges in the design of CMOS millimeter-wave (mm-wave) transceiver for Gbps wireless communication are discussed. To support the Gbps data rate, the link bandwidth of the receiver/transmitter must be wide enough, which puts a lot of pressure on the mm-wave front-end as well as on the baseband circuit. This paper discusses the effects of the limited link bandwidth on the transceiver system performance and overviews the bandwidth expansion techniques for mm-wave amplifiers and IF programmable gain amplifier. Furthermore, dual-mode power amplifier (PA) and self-healing technique are introduced to improve the PA's average efficiency and to deal with the process, voltage, and temperature variation issue, respectively. Several fully-integrated CMOS mm-wave transceivers are also presented to give a short overview on the state-of-the-art mm-wave transceivers.

Ultra-Wideband Mm-Wave I/Q CMOS Transmitters for High-Order QAM Waveforms

Ultra-Wideband Mm-Wave I/Q CMOS Transmitters for High-Order QAM Waveforms PDF Author: Hasan Al-Rubaye
Publisher:
ISBN:
Category :
Languages : en
Pages : 107

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Book Description
The continuing proliferation of wireless electronic devices, coupled with the promise of fifth generation mobile networks (5G) and Internet-of-Things (IoT) scale connectivity, will demand innovate design techniques and solutions on all network and device layers for both wireless and optical systems. Broadband and software-defined connectivity is at the forefront of research efforts to address these new challenges. The research projects presented in this dissertation explore the limits of current CMOS technology with the goal of achieving true DC-100 GHz software-defined transmitters, and with the maximum achievable instantaneous bandwidth. These transmitters will address new applications, such as short-range device-to-device communications, server-to-server connectivity in data centers, and fifth generation mm-wave software-defined transceivers, while still supporting traditional mobile links and connectivity below 6 GHz.

Design Techniques for High Data Rates in Microwave and Millimeter-Wave Transmitters

Design Techniques for High Data Rates in Microwave and Millimeter-Wave Transmitters PDF Author: Hayg-Taniel Dabag
Publisher:
ISBN: 9781303947544
Category :
Languages : en
Pages : 138

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Book Description
In the quest to increase channel bandwidths in wireless communication systems, two important trends are to move towards wider continuous bands at mm-wave frequencies and to aggregate smaller bands at cellular frequencies. In this dissertation a few of the challenges and possible circuit and DSP solutions for efficient high data rate communication using these techniques are described. First, an issue relating to cellular uplink carrier aggregation is discussed and a DSP based solution developed. Second, the design of a broad band CMOS PA for mm-wave applications is presented. Third, the design of an mm-wave predistortion system and its use to predistort an array of mm-wave CMOS SOI PAs is described. In the near term, cellular carriers plan on employing carrier aggregation to increase data rates. This can lead to significant receiver desensitization for a number of LTE band combinations, because of the cross-modulation products created by the nonlinearity of RF front-end components. To mitigate this effect, an all-digital cancellation algorithm is proposed in this thesis that canceled the cross-modulation product and improved the signal-to-interference-plus-noise ratio (SINR) and error-vector-magnitude (EVM) of the desired received signal by up to 20 dB. In the second part of the dissertation, the possibility of using mm-wave CMOS PAs for wideband communication is described. The design of CMOS stacked-FET PAs with an emphasis on appropriate complex impedances between the transistors is presented. The stacking of multiple FETs enables the use of higher supply voltages, which in turn allows higher output power and a broader bandwidth output matching network. A 4-stack amplifier design that achieves a saturated output power greater than 21 dBm while achieving a maximum power-added-efficiency (PAE) greater than 20% from 38 GHz to 47 GHz is reported. Finally, the thesis describes predistortion of an array of stacked-FET PAs after spatial power combining. Predistortion improved the signal quality to a high level, which allowed the use of complex modulation schemes, which in turn allows high data rates in a spectrally efficient manner. After predistortion a 100-MHz wide, 1024-QAM signal was demodulated with an EVM of 1.3%, which corresponds to a data rate of 1 Gb/s.

Power and Area Optimization Techniques for Ultra-wideband Millimeter-wave CMOS Transceivers

Power and Area Optimization Techniques for Ultra-wideband Millimeter-wave CMOS Transceivers PDF Author: Venumadhav Bhagavatula
Publisher:
ISBN:
Category :
Languages : en
Pages : 127

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Book Description
Over the past decade, opportunities for utilizing the broadband spectrum available at millimeter-wave (mm-wave) frequencies has motivated research on both short and long-range, highly-integrated complementary metal oxide semiconductor (CMOS) transceivers. Prototype mm-wave CMOS transceivers have been demonstrated for application in high-speed data transfer (57-64 GHz), wireless back-haul (71-76 GHz), automotive radar (77GHz) and medical imaging (90 GHz) systems. However, in spite of promising results, large scale deployment of mm-wave CMOS transceivers in portable and hand-held electronics is currently hindered by front-end power-consumptions on the order of several watts. Moreover, as a first order approximation, power consumption is directly proportional to system bandwidth. Therefore, as the bandwidth requirements of systems increase, the challenge with on-chip power consumption will become increasingly difficult to solve. In this dissertation, techniques for optimizing the power and area of ultra-wideband millimeter-wave transceivers are described. This work resulted in the fabrication of three mm-wave integrated circuits (IC), all of which were realized in a 6-metal layer 40-nm CMOS process. The first IC is a multi-stage transformer-feedback based 11-to-13 GHz direct-conversion receiver. The device achieves a 16% fractional-bandwidth, a peak power-gain of 27.6dB, and noise-figure of 5.3dB while consuming 28.8mW from a 0.9V supply. Second, a compact 24-54GHz 2-stage bandpass distributed amplifier utilizing mirror-symmetric Norton transformations to reduce inductor component values allowing efficient layout to occupy an active area of 0.15mm2. The device has a 77% fractional-bandwidth, an overall gain of 6.3dB, a minimum in-band IIP3 of 11dBm, while consuming 34mA from a 1V supply. The third, and the IC which includes the most integration among the three, is an ultra-broadband single-element heterodyne receiver intended for use in low-power phased-array systems. The receiver maintains 17GHz of bandwidth from the mm-wave front end, through a high-IF stage, and to the baseband output. The device occupies 1.2mm2 and exploits properties of gain-equalized transformers throughout the signal path to achieve an overall 17GHz bandwidth 20dB gain with a flat in-band response, 7.8dB DSB NF, and a P[subscript-1dB] of -24dBm, while consuming 104mW off a 1.1V supply.