Microwave Field-effect Transistors PDF Download
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Author: Raymond Sydney Pengelly
Publisher: Wiley-Blackwell
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 702
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Book Description
Author: Raymond Sydney Pengelly
Publisher: Wiley-Blackwell
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 702
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Book Description
Author: Raymond S. Pengelly
Publisher: IET
ISBN: 1884932509
Category : Technology & Engineering
Languages : en
Pages : 705
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Book Description
The following topics are dealt with: GaAs FET theory-small signal; GaAs FET theory-power; requirements and fabrication of GaAs FETs; design of transistor amplifiers; FET mixers; GaAs FET oscillators; FET and IC packaging; FET circuits; gallium arsenide integrated circuits; and other III-V materials and devices
Author: Zachary J. Lemnios
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 258
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Book Description
Author: Alvaro Augusto Almeida de Salles
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Richard David Gurney
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 276
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Book Description
Author: Frank Schwierz
Publisher: Wiley-Interscience
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 510
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Book Description
Comprehensive and up-to-date coverage of currently used transistors for commercial and military applications. Authors are recognized experts with previous publications. Updated descriptions of state-of-the-art devices available on Wiley Web site.
Author: Herbert Goronkin
Publisher:
ISBN:
Category :
Languages : en
Pages : 80
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Book Description
The purpose of the program was to fabricate a 10-watt F-Band field effect transistor. Two approaches were taken. The multiple mask approach was found to be cumbersome and generally difficult to execute for a 2.5 micron geometry device. Rather than pursue this approach, a second design was initiated which involved self-registration of the source and drain with respect to the gate by means of a selective epitaxial region which comprises the electrical channel. Due to several unanticipated process difficulties (for which solutions have been identified) time did not allow for completion of the fabrication portion of the FET-11 effort. Preliminary findings indicate that the approach is feasible and should be expected to yield microwave power field effect transistors. (Author).
Author: Raymond Sydney Pengelly
Publisher: Wiley-Blackwell
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 668
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Book Description
Author: H. E. G. Luxton
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: Nigel Peter Maxfield
Publisher:
ISBN:
Category :
Languages : en
Pages :
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