Author: Raymond Sydney Pengelly
Publisher: Wiley-Blackwell
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 702
Book Description
Microwave Field-effect Transistors
Author: Raymond Sydney Pengelly
Publisher: Wiley-Blackwell
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 702
Book Description
Publisher: Wiley-Blackwell
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 702
Book Description
Microwave Field Effect Transistor Development
Author: Herbert Goronkin
Publisher:
ISBN:
Category :
Languages : en
Pages : 80
Book Description
The purpose of the program was to fabricate a 10-watt F-Band field effect transistor. Two approaches were taken. The multiple mask approach was found to be cumbersome and generally difficult to execute for a 2.5 micron geometry device. Rather than pursue this approach, a second design was initiated which involved self-registration of the source and drain with respect to the gate by means of a selective epitaxial region which comprises the electrical channel. Due to several unanticipated process difficulties (for which solutions have been identified) time did not allow for completion of the fabrication portion of the FET-11 effort. Preliminary findings indicate that the approach is feasible and should be expected to yield microwave power field effect transistors. (Author).
Publisher:
ISBN:
Category :
Languages : en
Pages : 80
Book Description
The purpose of the program was to fabricate a 10-watt F-Band field effect transistor. Two approaches were taken. The multiple mask approach was found to be cumbersome and generally difficult to execute for a 2.5 micron geometry device. Rather than pursue this approach, a second design was initiated which involved self-registration of the source and drain with respect to the gate by means of a selective epitaxial region which comprises the electrical channel. Due to several unanticipated process difficulties (for which solutions have been identified) time did not allow for completion of the fabrication portion of the FET-11 effort. Preliminary findings indicate that the approach is feasible and should be expected to yield microwave power field effect transistors. (Author).
Microwave Field-effect Transistors
Author: Raymond S. Pengelly
Publisher: John Wiley & Sons
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 496
Book Description
Publisher: John Wiley & Sons
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 496
Book Description
Microwave Field Effect Transistor Development
Author: Michael C. Driver
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 71
Book Description
HE DEVELOPMENT OF A GALLIUM ARSENIDE Schottky barrier gate field effect transistor to deliver power at microwave frequencies. The program achieved 1.2 watts of saturated power at 3.0 GHz with six small (500 micrometers wide) devices wired in parallel on a single chip carrier. The small signal gain of individual devices at this frequency was as high as 10 dB with cut off frequencies of 10 GHz. A 5 dB gain at 3 GHz with 800 milliwatts of output power was achieved with 6 devices in parallel. Measurements were made of intermodulation products showing -23 dB third order IMP at small signal levels which is a typical result for devices that have not been optimized for low harmonic distortion. A mercury probe was developed for the rapid evaluation of expitaxial material for FET fabrication. (Modified author abstract).
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 71
Book Description
HE DEVELOPMENT OF A GALLIUM ARSENIDE Schottky barrier gate field effect transistor to deliver power at microwave frequencies. The program achieved 1.2 watts of saturated power at 3.0 GHz with six small (500 micrometers wide) devices wired in parallel on a single chip carrier. The small signal gain of individual devices at this frequency was as high as 10 dB with cut off frequencies of 10 GHz. A 5 dB gain at 3 GHz with 800 milliwatts of output power was achieved with 6 devices in parallel. Measurements were made of intermodulation products showing -23 dB third order IMP at small signal levels which is a typical result for devices that have not been optimized for low harmonic distortion. A mercury probe was developed for the rapid evaluation of expitaxial material for FET fabrication. (Modified author abstract).
High Power Microwave Field Effect Transistor Development
Author: M. C. Driver
Publisher:
ISBN:
Category :
Languages : en
Pages : 62
Book Description
Work is concentrating on gallium arsenide devices rather than silicon to take advantage of the higher mobility. Two fabrication techniques are being used to construct arrays of unit cells on GaAs wafers. The first technique requires realignment of multiple photomasks and has given the best performance but is more costly. The second technique uses only one photomask and the gate is self-aligned between the source and drain metalization. Both unit cells are designed for approximately one watt. The realigned cell has an active length of 1500 microns, and measures about 8 mils by 12 mils. This cell was tested at 3.5 GHz with .6 watts output, 18 db of gain, and 15% efficiency. The efficiency would be much improved in a better test fixture. The self-aligned gate cell has an active length of 2500 microns and measures 12.5 mils by 17 mils. This cell was tested at 4 GHz with one watt of power output, 6 db of gain and 39% drain efficiency or 34.7% overall efficiency.
Publisher:
ISBN:
Category :
Languages : en
Pages : 62
Book Description
Work is concentrating on gallium arsenide devices rather than silicon to take advantage of the higher mobility. Two fabrication techniques are being used to construct arrays of unit cells on GaAs wafers. The first technique requires realignment of multiple photomasks and has given the best performance but is more costly. The second technique uses only one photomask and the gate is self-aligned between the source and drain metalization. Both unit cells are designed for approximately one watt. The realigned cell has an active length of 1500 microns, and measures about 8 mils by 12 mils. This cell was tested at 3.5 GHz with .6 watts output, 18 db of gain, and 15% efficiency. The efficiency would be much improved in a better test fixture. The self-aligned gate cell has an active length of 2500 microns and measures 12.5 mils by 17 mils. This cell was tested at 4 GHz with one watt of power output, 6 db of gain and 39% drain efficiency or 34.7% overall efficiency.
Modern Microwave Transistors
Author: Frank Schwierz
Publisher: Wiley-Interscience
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 510
Book Description
Comprehensive and up-to-date coverage of currently used transistors for commercial and military applications. Authors are recognized experts with previous publications. Updated descriptions of state-of-the-art devices available on Wiley Web site.
Publisher: Wiley-Interscience
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 510
Book Description
Comprehensive and up-to-date coverage of currently used transistors for commercial and military applications. Authors are recognized experts with previous publications. Updated descriptions of state-of-the-art devices available on Wiley Web site.
Scientific and Technical Aerospace Reports
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702
Book Description
Microcircuit Reliability Bibliography
Author:
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 412
Book Description
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 412
Book Description
Fabrication Technology for Microwave GaAs Field Effect Transistors
Author: Richard David Gurney
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 276
Book Description
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 276
Book Description
Modeling and Characterization of RF and Microwave Power FETs
Author: Peter Aaen
Publisher: Cambridge University Press
ISBN: 113946812X
Category : Technology & Engineering
Languages : en
Pages : 375
Book Description
This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Publisher: Cambridge University Press
ISBN: 113946812X
Category : Technology & Engineering
Languages : en
Pages : 375
Book Description
This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.