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Author: A.G. Cullis
Publisher: Springer Science & Business Media
ISBN: 1402086156
Category : Technology & Engineering
Languages : en
Pages : 504
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Book Description
This volume contains invited and contributed papers presented at the conference on ‘Microscopy of Semiconducting Materials’ held at the University of Cambridge on 2-5 April 2007. The event was organised under the auspices of the Electron Microscopy and Analysis Group of the Institute of Physics, the Royal Microscopical Society and the Materials Research Society. This international conference was the fifteenth in the series that focuses on the most recent world-wide advances in semiconductor studies carried out by all forms of microscopy and it attracted delegates from more than 20 countries. With the relentless evolution of advanced electronic devices into ever smaller nanoscale structures, the problem relating to the means by which device features can be visualised on this scale becomes more acute. This applies not only to the imaging of the general form of layers that may be present but also to the determination of composition and doping variations that are employed. In view of this scenario, the vital importance of transmission and scanning electron microscopy, together with X-ray and scanning probe approaches can immediately be seen. The conference featured developments in high resolution microscopy and nanoanalysis, including the exploitation of recently introduced aberration-corrected electron microscopes. All associated imaging and analytical techniques were demonstrated in studies including those of self-organised and quantum domain structures. Many analytical techniques based upon scanning probe microscopies were also much in evidence, together with more general applications of X-ray diffraction methods.
Author: A.G. Cullis
Publisher: Springer Science & Business Media
ISBN: 1402086156
Category : Technology & Engineering
Languages : en
Pages : 504
Get Book Here
Book Description
This volume contains invited and contributed papers presented at the conference on ‘Microscopy of Semiconducting Materials’ held at the University of Cambridge on 2-5 April 2007. The event was organised under the auspices of the Electron Microscopy and Analysis Group of the Institute of Physics, the Royal Microscopical Society and the Materials Research Society. This international conference was the fifteenth in the series that focuses on the most recent world-wide advances in semiconductor studies carried out by all forms of microscopy and it attracted delegates from more than 20 countries. With the relentless evolution of advanced electronic devices into ever smaller nanoscale structures, the problem relating to the means by which device features can be visualised on this scale becomes more acute. This applies not only to the imaging of the general form of layers that may be present but also to the determination of composition and doping variations that are employed. In view of this scenario, the vital importance of transmission and scanning electron microscopy, together with X-ray and scanning probe approaches can immediately be seen. The conference featured developments in high resolution microscopy and nanoanalysis, including the exploitation of recently introduced aberration-corrected electron microscopes. All associated imaging and analytical techniques were demonstrated in studies including those of self-organised and quantum domain structures. Many analytical techniques based upon scanning probe microscopies were also much in evidence, together with more general applications of X-ray diffraction methods.
Author: Angus Rockett
Publisher: Springer Science & Business Media
ISBN: 0387686509
Category : Technology & Engineering
Languages : en
Pages : 629
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Book Description
This book describes semiconductors from a materials science perspective rather than from condensed matter physics or electrical engineering viewpoints. It includes discussion of current approaches to organic materials for electronic devices. It further describes the fundamental aspects of thin film nucleation and growth, and the most common physical and chemical vapor deposition techniques. Examples of the application of the concepts in each chapter to specific problems or situations are included, along with recommended readings and homework problems.
Author: Dieter K. Schroder
Publisher: John Wiley & Sons
ISBN: 0471739065
Category : Technology & Engineering
Languages : en
Pages : 800
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Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author: Sergei V. Kalinin
Publisher: Springer Science & Business Media
ISBN: 0387286683
Category : Technology & Engineering
Languages : en
Pages : 1002
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Book Description
This volume will be devoted to the technical aspects of electrical and electromechanical SPM probes and SPM imaging on the limits of resolution, thus providing technical introduction into the field. This volume will also address the fundamental physical phenomena underpinning the imaging mechanism of SPMs.
Author: Ray Egerton
Publisher: Springer Science & Business Media
ISBN: 9780387258003
Category : Technology & Engineering
Languages : en
Pages : 224
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Book Description
Scanning and stationary-beam electron microscopes are indispensable tools for both research and routine evaluation in materials science, the semiconductor industry, nanotechnology and the biological, forensic, and medical sciences. This book introduces current theory and practice of electron microscopy, primarily for undergraduates who need to understand how the principles of physics apply in an area of technology that has contributed greatly to our understanding of life processes and "inner space." Physical Principles of Electron Microscopy will appeal to technologists who use electron microscopes and to graduate students, university teachers and researchers who need a concise reference on the basic principles of microscopy.
Author: Weilie Zhou
Publisher: Springer Science & Business Media
ISBN: 0387396209
Category : Technology & Engineering
Languages : en
Pages : 533
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Book Description
This book presents scanning electron microscopy (SEM) fundamentals and applications for nanotechnology. It includes integrated fabrication techniques using the SEM, such as e-beam and FIB, and it covers in-situ nanomanipulation of materials. The book is written by international experts from the top nano-research groups that specialize in nanomaterials characterization. The book will appeal to nanomaterials researchers, and to SEM development specialists.
Author: Peter Russer
Publisher: Springer Science & Business Media
ISBN: 3540687688
Category : Technology & Engineering
Languages : en
Pages : 423
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Book Description
This book consists of contributions given in honor of Wolfgang J.R. Hoefer. Space and time discretizing time domain methods for electromagnetic full-wave simulation have emerged as key numerical methods in computational electromagnetics. Time domain methods are versatile and can be applied to the solution of a wide range of electromagnetic field problems. Computing the response of an electromagnetic structure to an impulsive excitation localized in space and time provides a comprehensive characterization of the electromagnetic properties of the structure in a wide frequency range. The most important methods are the Finite Difference Time Domain (FDTD) and the Transmission Line Matrix (TLM) methods. The contributions represent the state of the art in dealing with time domain methods in modern engineering electrodynamics for electromagnetic modeling in general, the Transmission Line Matrix (TLM) method, the application of network concepts to electromagnetic field modeling, circuit and system applications and, finally, with broadband devices, systems and measurement techniques.
Author: Seung-Deog Yoo
Publisher: Springer Science & Business Media
ISBN: 3540851909
Category : Technology & Engineering
Languages : en
Pages : 514
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Book Description
Current research fields in science and technology were presented and discussed at the EKC2008, informing about the interests and directions of the scientists and engineers in EU countries and Korea. The Conference has emerged from the idea of bringing together EU and Korea to get to know each other better, especially in fields of science and technology. The focus of the conference is put on the topics: Computational Fluid Dynamics; Mechatronics and Mechanical Engineering; Information and Communications Technology; Life and Natural Sciences; Energy and Environmental Technology.
Author: Bernd O. Kolbesen
Publisher: The Electrochemical Society
ISBN: 1566777402
Category : Semiconductors
Languages : en
Pages : 479
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Book Description
The proceedings of ALTECH 2009 address recent developments and applications of analytical techniques for semiconductor materials, processes and devices. The papers comprise techniques of elemental and structural analysis for bulk and surface impurities and defects, thin films as well as dopants in ultra-shallow junctions.
Author: Do Tran Cat
Publisher: Springer Science & Business Media
ISBN: 3540882014
Category : Technology & Engineering
Languages : en
Pages : 387
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Book Description
This book presents the majority of the contributions to the Tenth German-Vietnamese Seminar on Physics and Engineering (GVS10) that took place in the Gustav- Stresemann-Institut (GSI) in Bonn from June 6 to June 9, 2007. In the focus of these studies are the preparation and basic properties of new material systems, related investigation methods, and practical applications. Accordingly the sections in this book are entitled electrons: transport and confinement, low-dimensional systems, magnetism, oxidic materials, organic films, new materials, and methods. The series of German-Vietnamese seminars was initiated and sponsored by the Gottlieb Daimler- and Karl Benz -Foundation since 1998 and took place alt- nately in both countries. These bilateral meetings brought together top-notch senior and junior Vietnamese scientists with German Scientists and stimulated many contacts and co-operations. Under the general title “Physics and Engine- ing” the programs covered, in the form of keynote-lectures, oral presentations and posters, experimental and theoretical cutting-edge material-physics oriented topics. The majority of the contributions was dealing with modern topics of material science, particularly nanoscience, which is a research field of high importance also in Vietnam. Modern material science allows a quick transfer of research results to technical applications, which is very useful for fast developing countries like Vietnam. On the other hand, the seminars took profit from the strong cro- fertilization of the different disciplines of physics. This book is dedicated to the tenth anniversary of the seminars and nicely shows the scientific progress in Vietnam and the competitive level reached.
