Microscopy of Semiconducting Materials PDF Download
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Author: A.G. Cullis
Publisher: Springer Science & Business Media
ISBN: 3540319158
Category : Technology & Engineering
Languages : en
Pages : 543
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Book Description
The 14th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction.
Author: A.G. Cullis
Publisher: Springer Science & Business Media
ISBN: 3540319158
Category : Technology & Engineering
Languages : en
Pages : 543
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Book Description
The 14th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction.
Author: A. G. Cullis
Publisher:
ISBN: 9781351074636
Category : SCIENCE
Languages : en
Pages :
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Book Description
Author: A.G. Cullis
Publisher: CRC Press
ISBN: 1351091530
Category : Science
Languages : en
Pages : 1135
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Book Description
Modern electronic devices rely on ever-greater miniaturization of components, and semiconductor processing is approaching the domain of nanotechnology. Studies of devices in this regime can only be carried out with the most advanced forms of microscopy. Accordingly, Microscopy of Semiconducting Materials focuses on international developments in semiconductor studies carried out by all forms of microscopy. It provides an overview of the latest instrumentation, analysis techniques, and state-of-the-art advances in semiconducting materials science for solid state physicists, chemists, and material scientists.
Author: ASM International
Publisher: ASM International
ISBN: 1615030867
Category : Technology & Engineering
Languages : en
Pages : 534
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Book Description
Author: A.G. Cullis
Publisher: CRC Press
ISBN: 1351083082
Category : Technology & Engineering
Languages : en
Pages : 705
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Book Description
Modern electronic devices rely on ever-greater miniaturization of components, and semiconductor processing is approaching the domain of nanotechnology. Studies of devices in this regime can only be carried out with the most advanced forms of microscopy. Accordingly, Microscopy of Semiconducting Materials focuses on international developments in semiconductor studies carried out by all forms of microscopy. It provides an overview of the latest instrumentation, analysis techniques, and state-of-the-art advances in semiconducting materials science for solid state physicists, chemists, and material scientists.
Author: G.S Pogosyan
Publisher: CRC Press
ISBN: 9780750310086
Category : Mathematics
Languages : en
Pages : 630
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Book Description
Symmetry is permeating our understanding of nature: Group theoretical methods of intrinsic interest to mathematics have expanded their applications from physics to chemistry and biology. The ICGTMP Colloquia maintain the communication among the many branches into which this endeavor has bloomed. Lie group and representation theory, special functions, foundations of quantum mechanics, and elementary particle, nuclear, atomic, and molecular physics are among the traditional subjects. More recent areas include supersymmetry, superstrings and quantum gravity, integrability, nonlinear systems and quantum chaos, semigroups, time asymmetry and resonances, condensed matter, and statistical physics. Topics such as linear and nonlinear optics, quantum computing, discrete systems, and signal analysis have only in the last few years become part of the group theorists' turf. In Group Theoretical Methods in Physics, readers will find both review contributions that distill the state of the art in a broad field, and articles pointed to specific problems, in many cases, preceding their formal publication in the journal literature.
Author: Dieter K. Schroder
Publisher: John Wiley & Sons
ISBN: 0471739065
Category : Technology & Engineering
Languages : en
Pages : 800
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Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author: A Zissis
Publisher: CRC Press
ISBN: 9780750310079
Category : Science
Languages : en
Pages : 700
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Book Description
Held every three years, The International Symposia on the Science and Technology of Light Sources (LS) provide a unique forum for the international community of engineers, scientists, research organizations, and academia from the lighting industry. In Light Sources 2004, leaders in their respective fields discuss the latest findings and exciting developments in light source research. Contributors provide valuable analyses and discussions on topics such as incandescent and halogen sources, fluorescent discharge sources, lamp-related electronic gear, high intensity discharge sources, diagnostics, solid state sources, modeling, dielectric barrier sources, excimer devices, and nonlighting applications.
Author: Junichiro Kono
Publisher: CRC Press
ISBN: 148226921X
Category : Science
Languages : en
Pages : 636
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Book Description
This volume forms a solid presentation in several important areas of NGS research, including materials, growth and characterization, fundamental physical phenomena, and devices and applications. It examines the novel material of InAs and its related alloys, heterostructures, and nanostructures as well as more traditional NGS materials such as InSb, PbTe, and HgCdTe. Several chapters cover carbon nanotubes and spintronics, along with spin-orbit coupling, nonparabolicity, and large g-factors. The book also deals with the physics and applications of low-energy phenomena at the infrared and terahertz ranges.
Author: J.C. Woo
Publisher: CRC Press
ISBN: 9780750310178
Category : Science
Languages : en
Pages : 548
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Book Description
Compound Semiconductors 2004 was the 31st Symposium in this distinguished international series, held at Hoam Convention Center of Seoul National University, Seoul, Korea from September 12 to September 16, 2004. It attracted over 180 submissions from leading scientists in academic and industrial research institutions, and remains a major forum for the compound semiconductor research community since the first one held in 1966 at Edinburgh, UK under the name of 'International Symposium on Gallium Arsenide and related Compounds'. These proceedings provide an international perspective on the latest research and an overview of recent, important developments in III-V compounds, II-VI compounds and IV-IV compounds. In the total of 106 papers, notable progress was reported in the development of zinc oxide and spintronics. Steady advances were seen in traditional topics such as III-V based electronic and optoelectronic devices, growth and processing, and characterization. Novel research trends were observed in quantum structures, such as quantum wires and dots, which are promising for future developments in nanotechnology. As the primary forum for research into these materials and their device applications the book is an essential reference for researchers working on compound semiconductors in semiconductor physics, device physics, materials science, chemistry and electronic and electrical engineering.
