Metalorganic Chemical Vapor Deposition (MOCVD) Routes for Fabrication of Rare Earth Nitride Thin Films PDF Download
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Author: Michael Krasnopolski
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages :
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Book Description
Author: Michael Krasnopolski
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages :
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Book Description
Author: Zhaofeng Wang
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 132
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 11
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Book Description
A status report is given on the metalorganic chemical vapor deposition (MOCVD) of high-temperature superconducting thin films. The advantages of MOCVD processing manifest themselves in the quality of the films produced, and in the economy of the process. Metalorganic precursor requirements, deposition parameters and film properties are discussed. Also difficulties have been identified in making MOCVD a manufacturing technology. To solve these problems, future research directions are proposed.
Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 1119313031
Category : Technology & Engineering
Languages : en
Pages : 907
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Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Author: Brian Norio Hubert
Publisher:
ISBN:
Category :
Languages : en
Pages : 154
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Author: Dan R. Denomme
Publisher:
ISBN:
Category :
Languages : en
Pages : 67
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Author: Jeffrey Thomas Barton
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 276
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Author: Jong-Hee Park
Publisher: ASM International
ISBN: 161503224X
Category : Technology & Engineering
Languages : en
Pages : 477
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Author: Nikki Lynn Edleman
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
The synthesis and characterization of a new magnesium MOCVD precursor, Mg(dpm)2(TMEDA) is detailed. It is shown that the donating ligand TMEDA prevents oligomerization and subsequent volatility depression as observed in the commonly used [Mg(dpm)2]2. The superiority of Mg(dpm)2(TMEDA) as an MOCVD precursor is explicitly demonstrated by growth of epitaxial MgO thin films on single-crystal SrTiO3 substrates.
Author: Teresa S. Lazarz
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Materials and thin film processing development has been and remains key to continuing to make ever smaller, or miniaturized, microelectronic devices. In order to continue miniaturization, conformal, low-temperature deposition of new electronic materials is needed. Two techniques capable of conformality have emerged: chemical vapor deposition (CVD) and atomic layer deposition (ALD). Here, two processes for deposition of materials which could be useful in microelectronics, but for which no low-temperature, conformal process has been established as commercializable, are presented. One is ruthenium, intended for use in interconnects and in dynamic random access memory electrodes, a known material for use in microelectronics but for which a more conformal, yet fast process than previously demonstrated is required. The other is manganese nitride, which could be used as active magnetic layers in devices or as a dopant in materials for spintronics, which is not yet established as a desired material in part due to the lack of any previously known CVD or ALD process for deposition.
