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Author: Norman G. Einspruch
Publisher: Academic Press
ISBN: 1483217817
Category : Technology & Engineering
Languages : en
Pages : 491
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Book Description
VLSI Electronics Microstructure Science, Volume 15: VLSI Metallization discusses the various issues and problems related to VLSI metallization. It details the available solutions and presents emerging trends. This volume is comprised of 10 chapters. The two introductory chapters, Chapter 1 and 2 serve as general references for the electrical and metallurgical properties of thin conducting films. Subsequent chapters review the various aspects of VLSI metallization. The order of presentation has been chosen to follow the common processing sequence. In Chapter 3, some relevant metal deposition techniques are discussed. Chapter 4 presents the methods of VLSI lithography and etching. Conducting films are first deposited at the gate definition step; therefore, the issues related to gate metallization are discussed next in Chapter 5.In Chapter 6, contact metallization is elaborated, and Chapter 7 is devoted to multilevel metallization schemes. Long-time reliability is the subject of Chapter 8, which discusses the issues of contact and interconnect electromigration. GaAs metallization is tackled in Chapter 9. The volume concludes with a general discussion of the functions of interconnect systems in VLSI. Materials scientists, processing and design engineers, and device physicists will find the book very useful.
Author: Norman G. Einspruch
Publisher: Academic Press
ISBN: 1483217817
Category : Technology & Engineering
Languages : en
Pages : 491
Get Book
Book Description
VLSI Electronics Microstructure Science, Volume 15: VLSI Metallization discusses the various issues and problems related to VLSI metallization. It details the available solutions and presents emerging trends. This volume is comprised of 10 chapters. The two introductory chapters, Chapter 1 and 2 serve as general references for the electrical and metallurgical properties of thin conducting films. Subsequent chapters review the various aspects of VLSI metallization. The order of presentation has been chosen to follow the common processing sequence. In Chapter 3, some relevant metal deposition techniques are discussed. Chapter 4 presents the methods of VLSI lithography and etching. Conducting films are first deposited at the gate definition step; therefore, the issues related to gate metallization are discussed next in Chapter 5.In Chapter 6, contact metallization is elaborated, and Chapter 7 is devoted to multilevel metallization schemes. Long-time reliability is the subject of Chapter 8, which discusses the issues of contact and interconnect electromigration. GaAs metallization is tackled in Chapter 9. The volume concludes with a general discussion of the functions of interconnect systems in VLSI. Materials scientists, processing and design engineers, and device physicists will find the book very useful.
Author: Edward Sacher
Publisher: Springer Science & Business Media
ISBN: 1461505631
Category : Science
Languages : en
Pages : 208
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Book Description
As the demands put on the polymer/metal interface, particularly by the microelectronics industry, become more and more severe, the necessity for understanding this interface, its properties and its limitations, becomes more and more essential. This requires a broad knowledge of, and a familiarity with, the latest findings in this rapidly advancing field. At the very least, such familiarity requires an exchange of infonnation, particularly among those intimately involved in this field. Communications among many of us in this area have made one fact quite obvious: the facilities provided by existing organizations, scientific and otherwise, do not offer the forum necessary to accomplish this exchange of infonnation. It was for this reason that Jean-Jacques Pireaux, Steven Kowalczyk and I organized the first Metallization of Polymers, a symposium sponsored by the American Chemical Society, which took place in Montreal, September 25-28, 1989; the Proceedings from that symposium were published as ACS Symposium Series 440, (1990). It is this same per ceived lack of a proper forum, and the encouragement of my colleagues, that prompted me to organize this meeting, so as to bring to the attention of the participants new instruments, materials, methods, advances, and, particularly, thoughts in the field of polymer metalliza tion. The meeting was designed as a workshop, with time being made available throughout for discussion and for the consideration of new findings.
Author: Robert B. Schluter
Publisher:
ISBN:
Category : Iron ores
Languages : en
Pages : 32
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Book Description
Author: Rosemary P. Beatty
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 34
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Book Description
Author: Inder P. Batra
Publisher: Springer Science & Business Media
ISBN: 1461307953
Category : Science
Languages : en
Pages : 501
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Book Description
This book represents the work presented at a NATO Advanced Research Workshop on "Metallization and Metal-Semiconductor Interfaces", held at the Technical University of Munich, Garching, W. Germany from 22-26 August 1988. The major focus of the workshop was to evaluate critically the progress made in the area of metal-semiconductor interfaces. The underlying theme was the mechanism of Schottky barrier formation and a serious as sessment of the various models. A significant fraction of the workshop time was also spent in discussing the interaction of alkali metals with semiconductors. Alkali metals on semi conductors form ordered overlayers and the resulting system often exhibits one-dimensional metallic properties. The nature of their interaction has introduced new and exciting com plexities and this was pursued at length during the lively discussions at the workshop. A half a day was devoted to Scanning Tunneling Microscopy, the emphasis being on its utility in providing structural and electronic character of low-coverage regime. The book should pro vide readers with the most current status of the research activity in the general area of metal-semiconductor interfaces at an international level. It should also serve as an excellent introduction to the field, since sufficient review type of material has also been included The workshop organizers, Dr. I. P. Batra (Director), mM Almaden Research Center, San Jose, Prof. S. Ciraci, Bilkent University, Ankara, Prof. C. Y. Pong, University of California, Davis, Prof. Dr. F. Koch (Local Chairman), Technical University Munich, Garching, Dr. H.
Author: Roy Ernest Peterson
Publisher:
ISBN:
Category : Government publications
Languages : en
Pages : 28
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Book Description
Author: M. M. Fine
Publisher:
ISBN:
Category : Iron ores
Languages : en
Pages : 28
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Book Description
Author: Mathias Kamp
Publisher: BoD – Books on Demand
ISBN: 3839610559
Category : Technology & Engineering
Languages : en
Pages : 195
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Book Description
Within this work electrochemical processes for manufacturing of novel silicon solar cells are investigated. Direct plating of Ni and Al on n- and p- silicon is demonstrated by making use of solar cell characteristics. Homogenous Ni/Cu stacks are realized for bifacial and back contact solar cells, forming an excellent mechanical and electrical contact to silicon. For metallization of HIT solar cells, the plating behavior on ITO layers is studied. Additionally, plating processes on evaporated Al layers are developed and applied to back contact solar cells. By means of process optimization the plated metal stack on Al features sufficient adhesion and increases the lateral conductivity of the metal grid resulting in increased solar cell efficiency. An advanced metallization route for back contact solar cells which purposefully utilizes the different characteristics of the deposited metals (Al, Ni, Cu) is developed. The resulting metal stacks are characterized in detail using SEM, EDX and AES methods. Besides plating processes, local oxidizing processes for Al are established and combined with printing technologies to realize the metal contact separation for back contact solar cells.
Author: L. B. Rothman
Publisher:
ISBN:
Category : Electronics
Languages : en
Pages : 288
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Book Description
Author: K.L. Mittal
Publisher: Springer Science & Business Media
ISBN: 9780306441073
Category : Science
Languages : en
Pages : 496
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Book Description
This volume documents the proceedings of the Second Symposium on Metallized Plastics: Fundamental and Applied Aspects held under the aegis of the Dielectric Science and Technology Division of the Electrochemical Society in Montreal, Canada, May 7-10, 1990. The first symposium on this topic was held in Chicago, October 10-12, 1988 and the proceedings of l which have been chronicled in a hard-bound volume l As pointed out in the Preface to the proceedings of the first symposium the metallized plastics find scores of applications ranging from very mundane to very sophisticated. Even a cursory look at the literature will convince that this field has sprouted; and there is every reason to believe that with all the research and development activities taking place, new and exciting applications of metallized plastics will emerge. The program for the second symposium was very comprehensive as it included 46 papers covering many aspects of metallized plastics. This symposium was a testimonial to the brisk research activity and keen interest in the topic of metallized plastics. The success of this symposium reinforced our earlier belief that there was a definite need to hold symposia on this topic on a regular basis. Concomitantly, the third symposium in this vein was held in Phoenix, Arizona, October 13-18, 1991 and the fourth is planned for May 16-21, 1993 in Honolulu, Hawaii. As regards the present volume, it contains a total of 35 papers covering a variety of topics ranging from very fundamental to very applied.
