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Author: Paul McCusker
Publisher: Zondervan
ISBN: 0310866545
Category : Juvenile Fiction
Languages : en
Pages : 178
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Book Description
The Time Thriller Trilogy delivers gripping, fast-paced mystery that intrigues and captivates through hours, seconds, and centuries. A long history of strange disappearances and unexplainable occurrences leave clues that the town of Fawlt Line may actually sit on a time fault—a portal to alternate times and unexpected time travels—a twist of fate that puts all of Fawlt Line’s citizens in serious danger. Will they find the faith to hold on to the town and time where they belong?Can truth prevail?Elizabeth thought volunteering at the Fawlt Line Retirement Center would be fun, but she quickly has second thoughts. While most of the residents are wonderful, there’s something about the place—and a strangely familiar man in a wheelchair—that gives her the creeps. When people start disappearing from the center, leaving behind cryptic notes, Elizabeth is convinced the time fault is involved. Her own time-travel adventure may be the key to solving the mystery, but can she convince the sheriff she’s telling the truth before more people disappear?
Author: Mark Raphael Baker
Publisher: Text Publishing
ISBN: 1925410854
Category : Biography & Autobiography
Languages : en
Pages : 369
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Book Description
What right did I possess, as a child of survivors, to recreate an account of the Holocaust as if I was there? In writing The Fiftieth Gate, Mark Baker describes a journey from despair and death towards hope and life; it is the story of a son who enters his parents’ memories and, inside the darkness, finds light. In his evocative prose, Baker takes us to this place of horror, and then brings us back to reflect on these events and remember: ‘Never again’. Across the silence of fifty years, Baker and his family travel from Poland and Germany to Jerusalem and Melbourne, as the author struggles to uncover the mystery of his parents’ survival: his father Yossl was imprisoned in concentration camps and his mother Genia was forced into hiding after the Jews of her village were murdered. Twenty years on from its first publication, The Fiftieth Gate remains an extraordinary book. It has become a classic and has now sold over 70,000 copies. In Baker's new introduction, he recalls his motivations for writing this important memoir, and highlights how the testimonial culture in Holocaust studies has spread to awareness of other genocides and our responsibility (and failure) to prevent them. As well as The Fiftieth Gate, A Journey Through Memory, a seminal book on his parents’ experience during the Holocaust, Mark Raphael Baker wrote a compelling memoir, Thirty Days, A Journey to the End of Love, about the death of his wife. He was Director of the Australian Centre for Jewish Civilisation and Associate Professor of Holocaust and Genocide Studies in the School at Monash University, Melbourne. He died in 2023. ‘Heartrending and beautiful...This simply written, subtly complex narrative is instantly recognisable as a masterpiece, and the reader is rewarded by the light it sheds.’ Age ‘Combining precise historical research and poetic eloquence, Mark Baker’s The Fiftieth Gate remains the gold standard of second generation Holocaust memoirs on the occasion of its twentieth anniversary edition.’ Christopher R. Browning ‘Baker does with memory, what Rembrandt does with light. He uses it to model, to imagine, to illuminate, to astonish.’ Philip Adams
Author: Byung-Eun Park
Publisher: Springer Nature
ISBN: 9811512124
Category : Technology & Engineering
Languages : en
Pages : 421
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Book Description
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Author: Paulo Cappelletti
Publisher: Springer Science & Business Media
ISBN: 1461550157
Category : Technology & Engineering
Languages : en
Pages : 544
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Book Description
A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].
Author: Detlev Richter
Publisher: Springer Science & Business Media
ISBN: 9400760825
Category : Technology & Engineering
Languages : en
Pages : 287
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Book Description
The subject of this book is to introduce a model-based quantitative performance indicator methodology applicable for performance, cost and reliability optimization of non-volatile memories. The complex example of flash memories is used to introduce and apply the methodology. It has been developed by the author based on an industrial 2-bit to 4-bit per cell flash development project. For the first time, design and cost aspects of 3D integration of flash memory are treated in this book. Cell, array, performance and reliability effects of flash memories are introduced and analyzed. Key performance parameters are derived to handle the flash complexity. A performance and array memory model is developed and a set of performance indicators characterizing architecture, cost and durability is defined. Flash memories are selected to apply the Performance Indicator Methodology to quantify design and technology innovation. A graphical representation based on trend lines is introduced to support a requirement based product development process. The Performance Indicator methodology is applied to demonstrate the importance of hidden memory parameters for a successful product and system development roadmap. Flash Memories offers an opportunity to enhance your understanding of product development key topics such as: · Reliability optimization of flash memories is all about threshold voltage margin understanding and definition; · Product performance parameter are analyzed in-depth in all aspects in relation to the threshold voltage operation window; · Technical characteristics are translated into quantitative performance indicators; · Performance indicators are applied to identify and quantify product and technology innovation within adjacent areas to fulfill the application requirements with an overall cost optimized solution; · Cost, density, performance and durability values are combined into a common factor – performance indicator - which fulfills the application requirements
Author: Rino Micheloni
Publisher: Springer Science & Business Media
ISBN: 9048194318
Category : Technology & Engineering
Languages : en
Pages : 582
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Book Description
Digital photography, MP3, digital video, etc. make extensive use of NAND-based Flash cards as storage media. To realize how much NAND Flash memories pervade every aspect of our life, just imagine how our recent habits would change if the NAND memories suddenly disappeared. To take a picture it would be necessary to find a film (as well as a traditional camera...), disks or even magnetic tapes would be used to record a video or to listen a song, and a cellular phone would return to be a simple mean of communication rather than a multimedia console. The development of NAND Flash memories will not be set down on the mere evolution of personal entertainment systems since a new killer application can trigger a further success: the replacement of Hard Disk Drives (HDDs) with Solid State Drives (SSDs). SSD is made up by a microcontroller and several NANDs. As NAND is the technology driver for IC circuits, Flash designers and technologists have to deal with a lot of challenges. Therefore, SSD (system) developers must understand Flash technology in order to exploit its benefits and countermeasure its weaknesses. Inside NAND Flash Memories is a comprehensive guide of the NAND world: from circuits design (analog and digital) to Flash reliability (including radiation effects), from testing issues to high-performance (DDR) interface, from error correction codes to NAND applications like Flash cards and SSDs.
Author: Andrea Redaelli
Publisher: Woodhead Publishing
ISBN: 0128209461
Category : Technology & Engineering
Languages : en
Pages : 364
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Book Description
Semiconductor Memories and Systems provides a comprehensive overview of the current state of semiconductor memory at the technology and system levels. After an introduction on market trends and memory applications, the book focuses on mainstream technologies, illustrating their current status, challenges and opportunities, with special attention paid to scalability paths. Technologies discussed include static random access memory (SRAM), dynamic random access memory (DRAM), non-volatile memory (NVM), and NAND flash memory. Embedded memory and requirements and system level needs for storage class memory are also addressed. Each chapter covers physical operating mechanisms, fabrication technologies, and the main challenges to scalability. Finally, the work reviews the emerging trends for storage class memory, mainly focusing on the advantages and opportunities of phase change based memory technologies. Features contributions from experts from leading companies in semiconductor memory Discusses physical operating mechanisms, fabrication technologies and paths to scalability for current and emerging semiconductor memories Reviews primary memory technologies, including SRAM, DRAM, NVM and NAND flash memory Includes emerging storage class memory technologies such as phase change memory
Author: Betty Prince
Publisher: John Wiley & Sons
ISBN: 1119296404
Category : Technology & Engineering
Languages : en
Pages : 346
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Book Description
A detailed, practical review of state-of-the-art implementations of memory in IoT hardware As the Internet of Things (IoT) technology continues to evolve and become increasingly common across an array of specialized and consumer product applications, the demand on engineers to design new generations of flexible, low-cost, low power embedded memories into IoT hardware becomes ever greater. This book helps them meet that demand. Coauthored by a leading international expert and multiple patent holder, this book gets engineers up to speed on state-of-the-art implementations of memory in IoT hardware. Memories for the Intelligent Internet of Things covers an array of common and cutting-edge IoT embedded memory implementations. Ultra-low-power memories for IoT devices-including plastic and polymer circuitry for specialized applications, such as medical electronics-are described. The authors explore microcontrollers with embedded memory used for smart control of a multitude of Internet devices. They also consider neuromorphic memories made in Ferroelectric RAM (FeRAM), Resistance RAM (ReRAM), and Magnetic RAM (MRAM) technologies to implement artificial intelligence (AI) for the collection, processing, and presentation of large quantities of data generated by IoT hardware. Throughout the focus is on memory technologies which are complementary metal oxide semiconductor (CMOS) compatible, including embedded floating gate and charge trapping EEPROM/Flash along with FeRAMS, FeFETs, MRAMs and ReRAMs. Provides a timely, highly practical look at state-of-the-art IoT memory implementations for an array of product applications Synthesizes basic science with original analysis of memory technologies for Internet of Things (IoT) based on the authors' extensive experience in the field Focuses on practical and timely applications throughout Features numerous illustrations, tables, application requirements, and photographs Considers memory related security issues in IoT devices Memories for the Intelligent Internet of Things is a valuable working resource for electrical engineers and engineering managers working in the electronics system and semiconductor industries. It is also an indispensable reference/text for graduate and advanced undergraduate students interested in the latest developments in integrated circuit devices and systems.
Author: Panagiotis Dimitrakis
Publisher: Springer
ISBN: 3319487051
Category : Technology & Engineering
Languages : en
Pages : 215
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Book Description
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.
Author: Giovanni Campardo
Publisher: Springer Science & Business Media
ISBN: 3540265007
Category : Technology & Engineering
Languages : en
Pages : 596
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Book Description
The electronics and information technology revolution continues, but it is a critical time in the development of technology. Once again, we stand on the brink of a new era where emerging research will yield exciting applications and products destined to transform and enrich our daily lives! The potential is staggering and the ultimate impact is unimaginable, considering the continuing marriage of te- nology with fields such as medicine, communications and entertainment, to name only a few. But who will actually be responsible for transforming these potential new pr- ucts into reality? The answer, of course, is today’s (and tomorrow’s) design en- neers! The design of integrated circuits today remains an essential discipline in s- port of technological progress, and the authors of this book have taken a giant step forward in the development of a practice-oriented treatise for design engineers who are interested in the practical, industry-driven world of integrated circuit - sign.
Author: Santosh K. Kurinec
Publisher: CRC Press
ISBN: 1351832085
Category : Technology & Engineering
Languages : en
Pages : 450
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Book Description
Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.
