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Author: Jason R. Finley
Publisher: Springer
ISBN: 3319991698
Category : Psychology
Languages : en
Pages : 222
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Book Description
How is technology changing the way people remember? This book explores the interplay of memory stored in the brain (internal memory) and outside of the brain (external memory), providing a thorough interdisciplinary review of the current literature, including relevant theoretical frameworks from across a variety of disciplines in the sciences, arts, and humanities. It also presents the findings of a rich and novel empirical data set, based on a comprehensive survey on the shifting interplay of internal and external memory in the 21st century. Results reveal a growing symbiosis between the two forms of memory in our everyday lives. The book presents a new theoretical framework for understanding the interplay of internal and external memory, and their complementary strengths. It concludes with a guide to important dimensions, questions, and methods for future research. Memory and Technology will be of interest to researchers, professors, and students across the disciplines of psychology, philosophy, library and information science, human factors, media and cultural studies, anthropology and archaeology, photography, and cognitive rehabilitation, as well as anyone interested in how technology is affecting human memory. _____ "This is a novel book, with interesting and valuable data on an important, meaningful topic, as well as a gathering of multidisciplinary and interdisciplinary ideas...The research is accurately represented and inclusive. As a teaching tool, I can envision graduate seminars in different disciplines drawing on the material as the basis for teaching and discussions." Dr. Linda A. Henkel, Fairfield University "This book documents the achievements of a vibrant scientific project – you feel the enthusiasm of the authors for their research. The organization of the manuscript introduces the reader into a comparatively new field the same way as pioneering authors have approached it." Prof. Dr. Wolfgang Schönpflug, Freie Universität Berlin
Author: Jason R. Finley
Publisher: Springer
ISBN: 3319991698
Category : Psychology
Languages : en
Pages : 222
Get Book Here
Book Description
How is technology changing the way people remember? This book explores the interplay of memory stored in the brain (internal memory) and outside of the brain (external memory), providing a thorough interdisciplinary review of the current literature, including relevant theoretical frameworks from across a variety of disciplines in the sciences, arts, and humanities. It also presents the findings of a rich and novel empirical data set, based on a comprehensive survey on the shifting interplay of internal and external memory in the 21st century. Results reveal a growing symbiosis between the two forms of memory in our everyday lives. The book presents a new theoretical framework for understanding the interplay of internal and external memory, and their complementary strengths. It concludes with a guide to important dimensions, questions, and methods for future research. Memory and Technology will be of interest to researchers, professors, and students across the disciplines of psychology, philosophy, library and information science, human factors, media and cultural studies, anthropology and archaeology, photography, and cognitive rehabilitation, as well as anyone interested in how technology is affecting human memory. _____ "This is a novel book, with interesting and valuable data on an important, meaningful topic, as well as a gathering of multidisciplinary and interdisciplinary ideas...The research is accurately represented and inclusive. As a teaching tool, I can envision graduate seminars in different disciplines drawing on the material as the basis for teaching and discussions." Dr. Linda A. Henkel, Fairfield University "This book documents the achievements of a vibrant scientific project – you feel the enthusiasm of the authors for their research. The organization of the manuscript introduces the reader into a comparatively new field the same way as pioneering authors have approached it." Prof. Dr. Wolfgang Schönpflug, Freie Universität Berlin
Author: Michelle D. Miller
Publisher:
ISBN: 9781952271465
Category : Education
Languages : en
Pages : 288
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Book Description
"Concise, nontechnical explanations of major principles of memory and attention, plus ideas for handling technology use in the classroom"--
Author: Yoshio Nishi
Publisher: Elsevier
ISBN: 0857098098
Category : Computers
Languages : en
Pages : 456
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Book Description
New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)
Author: Karen Worcman
Publisher: Routledge
ISBN: 131768530X
Category : History
Languages : en
Pages : 248
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Book Description
Memory is a fundamental aspect of being and becoming, intimately entwined with space, time, place, landscape, emotion, imagination and identity. Memory studies is a burgeoning field of enquiry drawing from a range of social science, arts and humanities disciplines including human geography, sociology, cultural studies, media studies, heritage and museum studies, psychology and history. This book is a critically theorised practical exposition of how media and technology are used to make memories for museums, archives, social movements and community projects, looking at specific cases in the UK and Brazil where the authors have put these theories into practice. The authors define the protocol they present as social memory technology. Critically, this book is about learning to deal with our pasts and learning new methods of connecting our pasts across cultures toward a shared understanding and application of memory technologies.
Author: Joe Brewer
Publisher: John Wiley & Sons
ISBN: 1118211626
Category : Technology & Engineering
Languages : en
Pages : 766
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Book Description
Presented here is an all-inclusive treatment of Flash technology, including Flash memory chips, Flash embedded in logic, binary cell Flash, and multilevel cell Flash. The book begins with a tutorial of elementary concepts to orient readers who are less familiar with the subject. Next, it covers all aspects and variations of Flash technology at a mature engineering level: basic device structures, principles of operation, related process technologies, circuit design, overall design tradeoffs, device testing, reliability, and applications.
Author: Yuan Xie
Publisher: Springer Science & Business Media
ISBN: 144199551X
Category : Technology & Engineering
Languages : en
Pages : 321
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Book Description
This book explores the design implications of emerging, non-volatile memory (NVM) technologies on future computer memory hierarchy architecture designs. Since NVM technologies combine the speed of SRAM, the density of DRAM, and the non-volatility of Flash memory, they are very attractive as the basis for future universal memories. This book provides a holistic perspective on the topic, covering modeling, design, architecture and applications. The practical information included in this book will enable designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future, mainstream integrated circuits.
Author: Seiichi Aritome
Publisher: John Wiley & Sons
ISBN: 1119132606
Category : Technology & Engineering
Languages : en
Pages : 432
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Book Description
Offers a comprehensive overview of NAND flash memories, with insights into NAND history, technology, challenges, evolutions, and perspectives Describes new program disturb issues, data retention, power consumption, and possible solutions for the challenges of 3D NAND flash memory Written by an authority in NAND flash memory technology, with over 25 years’ experience
Author: Geoffrey C. Bowker
Publisher: MIT Press
ISBN: 0262524899
Category : Science
Languages : en
Pages : 275
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Book Description
How the way we hold knowledge about the past—in books, in file folders, in databases—affects the kind of stories we tell about the past. The way we record knowledge, and the web of technical, formal, and social practices that surrounds it, inevitably affects the knowledge that we record. The ways we hold knowledge about the past—in handwritten manuscripts, in printed books, in file folders, in databases—shape the kind of stories we tell about that past. In this lively and erudite look at the relation of our information infrastructures to our information, Geoffrey Bowker examines how, over the past two hundred years, information technology has converged with the nature and production of scientific knowledge. His story weaves a path between the social and political work of creating an explicit, indexical memory for science—the making of infrastructures—and the variety of ways we continually reconfigure, lose, and regain the past. At a time when memory is so cheap and its recording is so protean, Bowker reminds us of the centrality of what and how we choose to forget. In Memory Practices in the Sciences he looks at three "memory epochs" of the nineteenth, twentieth, and twenty-first centuries and their particular reconstructions and reconfigurations of scientific knowledge. The nineteenth century's central science, geology, mapped both the social and the natural world into a single time package (despite apparent discontinuities), as, in a different way, did mid-twentieth-century cybernetics. Both, Bowker argues, packaged time in ways indexed by their information technologies to permit traffic between the social and natural worlds. Today's sciences of biodiversity, meanwhile, "database the world" in a way that excludes certain spaces, entities, and times. We use the tools of the present to look at the past, says Bowker; we project onto nature our modes of organizing our own affairs.
Author: Wen Siang Lew
Publisher: Springer Nature
ISBN: 9811569126
Category : Science
Languages : en
Pages : 439
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Book Description
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
Author: Clive Thompson
Publisher: Penguin
ISBN: 1101638710
Category : Technology & Engineering
Languages : en
Pages : 294
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Book Description
A revelatory and timely look at how technology boosts our cognitive abilities—making us smarter, more productive, and more creative than ever It’s undeniable—technology is changing the way we think. But is it for the better? Amid a chorus of doomsayers, Clive Thompson delivers a resounding “yes.” In Smarter Than You Think, Thompson shows that every technological innovation—from the written word to the printing press to the telegraph—has provoked the very same anxieties that plague us today. We panic that life will never be the same, that our attentions are eroding, that culture is being trivialized. But, as in the past, we adapt—learning to use the new and retaining what is good of the old. Smarter Than You Think embraces and extols this transformation, presenting an exciting vision of the present and the future.
