Mechanical Characterization of Polycrystalline 3C Silicon Carbide Thin Films PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Mechanical Characterization of Polycrystalline 3C Silicon Carbide Thin Films PDF full book. Access full book title Mechanical Characterization of Polycrystalline 3C Silicon Carbide Thin Films by Sharvani Nagappa. Download full books in PDF and EPUB format.
Author: Sharvani Nagappa
Publisher:
ISBN:
Category :
Languages : en
Pages : 230
Get Book Here
Book Description
Author: Sharvani Nagappa
Publisher:
ISBN:
Category :
Languages : en
Pages : 230
Get Book Here
Book Description
Author: Jay S. Mitchell
Publisher:
ISBN:
Category :
Languages : en
Pages : 254
Get Book Here
Book Description
Author: Swaminathan Jayaraman
Publisher:
ISBN:
Category :
Languages : en
Pages : 170
Get Book Here
Book Description
Author: Jayadeep Deva Reddy
Publisher:
ISBN:
Category :
Languages : en
Pages :
Get Book Here
Book Description
Author: Reza Ghodssi
Publisher: Springer Science & Business Media
ISBN: 0387473181
Category : Technology & Engineering
Languages : en
Pages : 1211
Get Book Here
Book Description
MEMs Materials and Processes Handbook" is a comprehensive reference for researchers searching for new materials, properties of known materials, or specific processes available for MEMS fabrication. The content is separated into distinct sections on "Materials" and "Processes". The extensive Material Selection Guide" and a "Material Database" guides the reader through the selection of appropriate materials for the required task at hand. The "Processes" section of the book is organized as a catalog of various microfabrication processes, each with a brief introduction to the technology, as well as examples of common uses in MEMs.
Author: Lunet Estefany Luna
Publisher:
ISBN:
Category :
Languages : en
Pages : 109
Get Book Here
Book Description
Silicon carbide (SiC) based electronics and sensors hold promise for pushing past the limits of current technology to achieve small, durable devices that can function in high-temperature, high-voltage, corrosive, and biological environments. SiC is an ideal material for such conditions due to its high mechanical strength, excellent chemical stability, and its biocompatibility. Consequently, SiC thin films and nanowires have attracted interest in applications such as micro- and nano-electromechanical systems, biological sensors, field emission cathodes, and energy storage devices. In terms of high-temperature microdevices, maintaining low-resistance electrical contact between metal and SiC remains a challenge. Although SiC itself maintains structural and electrical stability at high temperatures, the metallization schemes on SiC can suffer from silicide formation and oxidation when exposed to air. The second chapter presents efforts to develop stable metallization schemes to SiC. A stack consisting of Ni-induced solid-state graphitization of SiC and an atomic layer deposited layer of alumina is shown to yield low contact resistivity of Pt/Ti to polycrystalline n-type 3C-SiC films that is stable in air at 450 oC for 500 hours. The subsequent chapters focus on the growth and structural characterization of SiC nanowires. In addition to its structural stability in harsh-environments, there is interest in controlling SiC crystal structure or polytype formation. Over 200 different polytypes have been reported for SiC, with the most common being 3C, 4H, and 2H. In terms of SiC nanowire growth, the 3C or cubic phase is the most prevalent. However, as the stacking fault energy for SiC is on the order of a few meV, it is common to have a high density of stacking faults within a given SiC crystal structure. Thus, to enable reliable performance of SiC nanowires, a growth method that can promote a specific polytype or reduce stacking faults is of importance. Ni-catalyzed chemical vapor deposition method is employed for the growth of the nanowires. The effects of substrate structure and quality as well as the various growth parameters such as temperature, pressure, and post-deposition annealing are investigated. Most significant has been the growth and characterization of vertically aligned hexagonal phase (or 4H-like) SiC nanowires grown on commercially available 4H-SiC (0001). The studies presented in this thesis tackle issues in SiC metallization and nanowire growth in efforts to expand the versatility of SiC as a material platform for novel devices.
Author: Patrick Gu-Ho Kim
Publisher:
ISBN:
Category :
Languages : en
Pages : 180
Get Book Here
Book Description
Author: Bryan Kent Oliver
Publisher:
ISBN:
Category :
Languages : en
Pages : 138
Get Book Here
Book Description
On the other hand, with He dilution at 15 mTorr the percent crystallinity obtained was also 86%, with decreasing crystallinity at lower pressures. We found that a dilution consisting of a 50%-50% mixture of H2-He, which allows a high ion bombardment deposition from the helium that is also benefited by the hydrogen etching effect, did not compromise the quality of the films. This plasma selection produced about 84% crystalline films, independent of the pressure setting. X-ray diffraction reveals the dominant crystal textures are 111 and 220 orientations, with 220 preferential growth at higher deposition pressures. The CH4/SiH4 flow ratio was found critical to the formation of microcrystalline SiC.
Author: Muthu Wijesundara
Publisher: Springer Science & Business Media
ISBN: 1441971211
Category : Technology & Engineering
Languages : en
Pages : 247
Get Book Here
Book Description
Silicon Carbide Microsystems for Harsh Environments reviews state-of-the-art Silicon Carbide (SiC) technologies that, when combined, create microsystems capable of surviving in harsh environments, technological readiness of the system components, key issues when integrating these components into systems, and other hurdles in harsh environment operation. The authors use the SiC technology platform suite the model platform for developing harsh environment microsystems and then detail the current status of the specific individual technologies (electronics, MEMS, packaging). Additionally, methods towards system level integration of components and key challenges are evaluated and discussed based on the current state of SiC materials processing and device technology. Issues such as temperature mismatch, process compatibility and temperature stability of individual components and how these issues manifest when building the system receive thorough investigation. The material covered not only reviews the state-of-the-art MEMS devices, provides a framework for the joining of electronics and MEMS along with packaging into usable harsh-environment-ready sensor modules.
Author: Bharat Bhushan
Publisher: Springer
ISBN: 3662543575
Category : Technology & Engineering
Languages : en
Pages : 1704
Get Book Here
Book Description
This comprehensive handbook has become the definitive reference work in the field of nanoscience and nanotechnology, and this 4th edition incorporates a number of recent new developments. It integrates nanofabrication, nanomaterials, nanodevices, nanomechanics, nanotribology, materials science, and reliability engineering knowledge in just one volume. Furthermore, it discusses various nanostructures; micro/nanofabrication; micro/nanodevices and biomicro/nanodevices, as well as scanning probe microscopy; nanotribology and nanomechanics; molecularly thick films; industrial applications and nanodevice reliability; societal, environmental, health and safety issues; and nanotechnology education. In this new edition, written by an international team of over 140 distinguished experts and put together by an experienced editor with a comprehensive understanding of the field, almost all the chapters are either new or substantially revised and expanded, with new topics of interest added. It is an essential resource for anyone working in the rapidly evolving field of key technology, including mechanical and electrical engineers, materials scientists, physicists, and chemists.
