Measurement and Interpretation of Transient Electronic Phenomena in Cadmium Sulfide PDF Download
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Author: Richard Anton Greiner
Publisher:
ISBN:
Category : Cadmium sulfide photoconductive cells
Languages : en
Pages : 214
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Author: Richard Anton Greiner
Publisher:
ISBN:
Category : Cadmium sulfide photoconductive cells
Languages : en
Pages : 214
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Author: John Irvin Giem
Publisher:
ISBN:
Category : Cadmium sulfide photoconductive cells
Languages : en
Pages : 60
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"An analysis has been made of a CdS device which exhibits a transient negative resistance at room temperature and low field strengths whereas previously reported cases of negative resistance in CdS were observed at low temperatures and moderate to high electric fields. The CdS bar was illuminated on one end in the vicinity of an ohmic In contact. Contact was made to the other end of the device with a rectifying Ag contact and the device was reverse biased. Experimental evidence and the analytical results both indicated that it is necessary that the material used to make the negative resistance devices must have a relatively low carrier mobility, high trap density, and a low regeneration rate for trapped carriers. As the light induced carriers reach the rectifying contact and raise the carrier concentration, the voltage across the contact decreases due to the dependence of the voltage on carrier concentration. This induces a transient negative resistance if the transit time of carriers from the illuminated section of the crystal is relatively long"--Abstract, leaf ii.
Author: Library of Congress
Publisher:
ISBN:
Category : Catalogs, Subject
Languages : en
Pages : 656
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Author: Library of Congress
Publisher:
ISBN:
Category : Catalogs, Subject
Languages : en
Pages : 656
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A cumulative list of works represented by Library of Congress printed cards.
Author:
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ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 892
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Author:
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ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 1478
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Author:
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ISBN:
Category : Aeronautics
Languages : en
Pages : 1134
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Author: Library of Congress
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ISBN:
Category :
Languages : en
Pages : 658
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Author: Eric Léon Anne Courtens
Publisher:
ISBN:
Category : Cadmium sulfide
Languages : en
Pages : 195
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The static distribution of the electric field in thin insulating crystals of DcS provided with various electrodes was investigated. It was found that, when non-injecting electrodes were used, contact barriers were formed which have the nature of the usual Schottky barriers known to exist on high-conductivity CdS. The square of the barrier thickness is linear in the applied voltage, and the barrier potential is related to the metal work-function, the electron affinity of CdS, and the Fermi level depth, as predicted by the simplest contact theory, without having to resort to surface states. The barrier thickness, which for insulators cannot be measured by any of the standard semiconductor procedures, was derived from the measurement of a fast-pulse photoeffect. A pulse photoeffect model was developed that successfully explains the results in terms of contact barriers. The barrier space-charge density can be related to the bulk density of centers. The barrier photoeffect model in CdS is dependent on the presence of native defects of relatively high density and electron cross-section. The properties of these centers are in agreement with previous reports. Slow sensitizing centers were also investigated, and their cross-section is in good agreement with previously-reported values. The results indicate how to prepare contacts that approach the flat band condition. This is shown to be important for accurate resistivity measurements on thin crystals. (Author).
Author: Xerox University Microfilms
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 874
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