Materials Research Society Symposium Proceedings. Volume 743. Held in Boston, Massachusetts, December 2-6 2002. GaN and Related Alloys PDF Download
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Languages : en
Pages : 861
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Symposium L, "GaN and Related Alloys-2002," was held December 2-6 at the 2002 MRS Fall Meeting in Boston, Massachusetts. During nine half-day oral sessions, nine invited talks and 55 contributed talks were given. In three poster sessions, 161 posters were presented. This year's nitride symposium again was characterized by a wide scope of nitride related advances spanning from basic materials physics over process technology to high performance devices. Strong development was reported in bulk growth of GaN and AIN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and full consideration of polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/ higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. A strong development is also seen in nitride-based electronic devices with new heterostructure FET designs for RF power applications including such on Si substrates and wafer fusion. These symposium proceedings capture a crosscut of the exciting developments in this rapidly progressing and commercializing field. This volume will be useful for researchers working in the field of nitrides, and for students who seek entry into the subject.
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Languages : en
Pages : 861
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Book Description
Symposium L, "GaN and Related Alloys-2002," was held December 2-6 at the 2002 MRS Fall Meeting in Boston, Massachusetts. During nine half-day oral sessions, nine invited talks and 55 contributed talks were given. In three poster sessions, 161 posters were presented. This year's nitride symposium again was characterized by a wide scope of nitride related advances spanning from basic materials physics over process technology to high performance devices. Strong development was reported in bulk growth of GaN and AIN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and full consideration of polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/ higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. A strong development is also seen in nitride-based electronic devices with new heterostructure FET designs for RF power applications including such on Si substrates and wafer fusion. These symposium proceedings capture a crosscut of the exciting developments in this rapidly progressing and commercializing field. This volume will be useful for researchers working in the field of nitrides, and for students who seek entry into the subject.
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Category :
Languages : en
Pages : 0
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Symposium L, "GaN and Related Alloys-2002," was held December 2-6 at the 2002 MRS Fall Meeting in Boston, Massachusetts During nine half-day oral sessions, nine invited talks and 53 contributed talks were given in three poster sessions, 161 posters were presented. This year's nitride symposium again was characterized by a wide scope of nitride related advances spanning from basic materials physics over process technology to high performance devices. Strong development was reported in bulk growth of GaN and AIN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and full consideration of polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. A strong development is also seen in nitride-based electronic devices with new heterostructure FET designs for RF power applications including such on Si substrates and wafer fusion. These symposium proceedings capture a crosscut of the exciting developments in this rapidly progressing and commercializing field. This volume will be useful for researchers working in the field of nitrides, and for students who seek entry into the subject.
Author: Materials Research Society. Meeting
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ISBN:
Category : Science
Languages : en
Pages : 900
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This year's nitride symposium showed the scope of nitride-related advances spanning basic materials physics over process technology to high-performance devices. Progress was reported in bulk growth of GaN and AlN, growth on various substrates and substrate orientations, optical properties of InN, defect and doping analysis of p-doped GaN, and polarization properties. These led to new performance records in visible light emitter technology, i.e., higher efficiency/higher brightness, UV emitters with shorter wavelength, and UV and photo detectors. Advances in the development of nitride-based electronic devices with new heterostructure FET designs for RF power applications, including those on Si substrates and wafer fusion, are also reported. This book captures the exciting developments in this rapidly progressing field. Topics include: epitaxy - devices and defect reduction; defects and characterization; epitaxy - nonpolar orientations and alloys; optical properties; UV emitters and detectors; visible light emitters; electronic devices; characterization of defects and transport; and contacts, processing and p-type nitrides.
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Languages : en
Pages : 0
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This proceedings volume is the permanent record of the Materials Research Society symposium entitled "GaN and Related Alloys," held November 30-December 4, 1998, at the MRS Fall Meeting in Boston, Massachusetts. The symposium covered the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high- density information storage, white lighting for indoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and for covert undersea communications. The symposium contained a plenary session with talks on laser diodes, electronic devices, substrates, etching, contacts, and piezoelectric and pyroelectric properties. This was followed by sessions on laser diodes and spectroscopy; conventional growth and characterization; epitaxial lateral overgrowth and selective growth; theory, defects, transport, and bandstructure; surfaces, theory, and processing; LEDs, UV detectors, and optical properties; electronic devices and processing; quantum dots; novel growth, doping, and processing; and finally, rare-earth doping and optical emission.
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Category : Electroluminescent devices
Languages : en
Pages : 896
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Author: Christopher C. Berndt
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Category : Technology & Engineering
Languages : en
Pages : 510
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Category :
Languages : en
Pages : 0
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Author: Materials Research Society. Meeting
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ISBN:
Category : Ferroelectric devices
Languages : en
Pages : 528
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Author: Surajit Sen
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Category : Science
Languages : en
Pages : 192
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The past decade has seen an explosive growth of interest in the physics of granular materials. Granular media are comprised of macroscopic objects with internal degrees of freedom. Granular assemblies exhibit phenomena that incorporate the properties of traditional solids, liquids and gases, making it a unique state. In many ways, the granular state is a generalized state of matter. This new volume from the Materials Research Society brings together researchers from many countries and disciplines to assess issues and problems concerned with the collective behavior of granular assemblies as encountered in the context of various applications. In particular, these applications include ceramic science, shock propagation and absorption, design and maintenance of stable natural and artificial structures, processing of pharmaceuticals, and self-assembly processes associated with the synthesis of ultrahigh-density magnetic tapes. The volume should be of value to researchers involved in exploring granular material-based technologies, and is expected to stimulate further research in this arena. Topics include: electromagnetic fields; structural issues; flow behavior; and dynamical problems.
Author: Ulrich Simon
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Category : Technology & Engineering
Languages : en
Pages : 216
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