Materials and Technology for Nonvolatile Memories: Volume 1729 PDF Download
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Author: Panagiotis Dimitrakis
Publisher: Materials Research Society
ISBN: 9781605117065
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
Symposium M, 'Materials and Technology for Nonvolatile Memories', was held November 30-December 5 at the 2014 MRS Fall Meeting in Boston, Massachusetts, which was a follow up of previous symposia on nonvolatile memories. Main research areas featured in Symposium M were advanced Flash memories, organic memories, resistive switching memories (ReRAM), magnetoresistive random access memories (MRAM), ferroelectric random access memories (FeRAM), phase-change memories, as well as emerging materials and technologies for nonvolatile memories. In addition, a highly successful one-day tutorial session, 'Emerging Materials and Devices for Nonvolatile Memories', was conducted and included tutorials on ReRAM, polymer/organic materials, MRAM, and Flash memories. This symposium proceedings volume represents the recent advances and related material issues on various kinds of nonvolatile memory technologies. The papers in this volume are categorized according to each type of memory technology and are not in the order of the symposium presentations.
Author: Panagiotis Dimitrakis
Publisher: Materials Research Society
ISBN: 9781605117065
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
Symposium M, 'Materials and Technology for Nonvolatile Memories', was held November 30-December 5 at the 2014 MRS Fall Meeting in Boston, Massachusetts, which was a follow up of previous symposia on nonvolatile memories. Main research areas featured in Symposium M were advanced Flash memories, organic memories, resistive switching memories (ReRAM), magnetoresistive random access memories (MRAM), ferroelectric random access memories (FeRAM), phase-change memories, as well as emerging materials and technologies for nonvolatile memories. In addition, a highly successful one-day tutorial session, 'Emerging Materials and Devices for Nonvolatile Memories', was conducted and included tutorials on ReRAM, polymer/organic materials, MRAM, and Flash memories. This symposium proceedings volume represents the recent advances and related material issues on various kinds of nonvolatile memory technologies. The papers in this volume are categorized according to each type of memory technology and are not in the order of the symposium presentations.
Author: Dirk J. Wouters
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 248
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Tingkai Li
Publisher: Materials Research Society
ISBN: 9781558999572
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
This book, first published in 2007 and the second in a series from MRS, focuses on the scientific and technological exploration of materials and devices with nonvolatile memory properties. Strong and increasing interest in nonvolatile memories, both domestic and international, indicates the worldwide importance of these materials and memory devices. The papers in this volume represent the latest technical advancements and information on nonvolatile memory devices from universities, national laboratories and industry. They also provide insight into emerging trends. Research results are presented for: polymer and molecular nonvolatile memory devices; flash nonvolatile memory devices; nanoparticle nonvolatile memory devices; resistance switching nonvolatile memory devices; ferroelectric nonvolatile memory devices; phase-change nonvolatile memory devices; and magnetic nonvolatile memory devices and others.
Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Computers
Languages : en
Pages : 416
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: A. Claverie
Publisher: Cambridge University Press
ISBN: 9781107409132
Category : Technology & Engineering
Languages : en
Pages : 410
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Book Description
This 2005 book focuses on the scientific and technological exploration of materials and devices with nonvolatile memory properties. Scientists and engineers working on diverse memory technologies come together here to highlight possible advantages and disadvantages of each expertise. A broad range of topics are featured - from fundamental materials properties and integration, to demonstration and industrial devices. Invited presentations are broad-based and more tutorial in nature, helping to illustrate major trends. Topics include: nonvolatile memories with discrete storage nodes; ferroelectric memories; magnetoresistive randam access memory; nanoparticle memories; materials for nonvolatile memories and organic and resistive memories.
Author: Yoshio Nishi
Publisher: Woodhead Publishing
ISBN: 0081025858
Category : Science
Languages : en
Pages : 662
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Book Description
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping and resistive random access memory
Author: Tseung-Yuen Tseng
Publisher:
ISBN: 9781588832511
Category : Flash memories (Computers)
Languages : en
Pages :
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Book Description
Author: Yoshihisa Fujisaki
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 224
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Yoshihisa Fujisaki
Publisher: Materials Research Society
ISBN: 9781605114071
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
Symposium E, "Materials and Physics of Emerging Nonvolatile Memories," was held April 9-13 at the 2012 MRS Spring Meeting in San Francisco, California, which was a follow up of previous symposia on nonvolatile memories. In this year's symposium, 127 papers were presented in 11 sessions, including 17 invited talks, 53 oral and 57 poster contributions. Such a large number of paper submissions and high attendance in the symposium indicate continuous strong interest and worldwide research efforts in the field of nonvolatile memories. Main research areas featured in Symposium E were advanced flash and nanofloating gate memories, ferroelectric and magnetoresistive memories, organic and molecular memories, memristors and resistive switching memories, and phase-change memories. In particular, a large number of contributions were presented on resistive switching memories. The selected papers in the proceedings volume have been categorized in these areas.
Author: Panagiotis Dimitrakis
Publisher: Springer
ISBN: 9783319487038
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.
