Material Characterization and Process Development for Indium-arsenide PDF Download
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Author: Rohan K. Bambery
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Languages : en
Pages :
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Efforts to push the performance of transistors for millimeter-wave and microwave applications have borne fruit through device size scaling and the use of novel material systems. III-V semiconductors and their alloys hold a distinct advantage over silicon because they have much higher electron mobility which is a prerequisite for high frequency operation. InGaAs/InP pseudomorphic heterojunction bipolar transistors (HBTs) have demonstrated fT of 765 GHz at room temperature and InP based high electron mobility transistors (HEMTs) have demonstrated fMax of 1.2 THz. The 6.1 A lattice family of InAs, GaSb, AlSb covers a wide variety of band gaps and is an attractive future material system for high speed device development. Extremely high electron mobilities ~ 30,000 cm^2 V^-1s^-1 have been achieved in modulation doped InAs-AlSb structures. The work described in this thesis involves material characterization and process development for HEMT fabrication on this material system.
Author: Rohan K. Bambery
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ISBN:
Category :
Languages : en
Pages :
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Book Description
Efforts to push the performance of transistors for millimeter-wave and microwave applications have borne fruit through device size scaling and the use of novel material systems. III-V semiconductors and their alloys hold a distinct advantage over silicon because they have much higher electron mobility which is a prerequisite for high frequency operation. InGaAs/InP pseudomorphic heterojunction bipolar transistors (HBTs) have demonstrated fT of 765 GHz at room temperature and InP based high electron mobility transistors (HEMTs) have demonstrated fMax of 1.2 THz. The 6.1 A lattice family of InAs, GaSb, AlSb covers a wide variety of band gaps and is an attractive future material system for high speed device development. Extremely high electron mobilities ~ 30,000 cm^2 V^-1s^-1 have been achieved in modulation doped InAs-AlSb structures. The work described in this thesis involves material characterization and process development for HEMT fabrication on this material system.
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Languages : en
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Author: Kam Tai Chan
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Category : Epitaxy
Languages : en
Pages : 450
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Author: Joshua Bergman
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Category : Indium arsenide
Languages : en
Pages :
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This dissertation focuses on the development of integrated circuits that employ InAs quantum well electronic devices. There are two InAs quantum well electronic devices studied in this work, the first being the pseudomorphic InAs/In0.53Ga0.47As/AlAs resonant tunneling diode (RTD) grown on an InP substrate, and the second being the InAs/AlSb HEMT. Because of there is no semi-insulating substrate near the InAs lattice constant of 6.06, this work develops monolithic and hybrid integration methods to realize integrated circuits. For the case of hybrid RTD circuits, a thin-film integration method was developed to integrate InAs/In0.53Ga0.47As/AlAs RTDs to prefabricated CMOS circuits, and this technique was employed to demonstrate a novel RTD-CMOS comparator. To achieve higher speed circuit operation, a next-generation RTD fabrication process was developed to minimize the parasitic capacitance associated with the thin-film hybridization process. This improved fabrication process is detailed and yield and uniformity analysis is included. Similar InP-based tunnel diodes can be integrated with InP-based HEMTs in monolithic RTD-HEMT integrated circuits, and in this work elementary microwave circuit components were characterized that co-integrate InP-based tunnel diodes with HEMTs. In the case of the InAs/AlSb HEMT, the monolithic approach grows the HEMT on a metamorphic buffer on a GaAs substrate. The semiconductor material and process development of the InAs/AlSb HEMT MMIC technology is described. The remarkable microwave and RF noise properties of the InAs/AlSb HEMT were characterized and analyzed, with special attention given to the strong effects of impact ionization in the narrow bandgap InAs channel. Results showed the extent to which impact ionization affects the small-signal gain and noise figure of the HEMT, and that these effects become less prevalent as the frequency of operation increases.
Author: Michael A. Marciniak
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ISBN:
Category : Indium antimonide crystals
Languages : en
Pages : 262
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Author: Scott C. Phillips
Publisher:
ISBN: 9781423516262
Category : Quantum electronics
Languages : en
Pages : 121
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Indium arsenide-antimonide (InAsSb) semiconductors have been determined to emit in the 3-5 micrometer range, the window of interest for countermeasures against infrared electro-optical threats. This experiment set out to cross the bulk to quantum well characterization barrier by optically characterizing two sets of compositionally matched type I quantum well and bulk well material samples. Absorption measurements determined the band gap energy of the bulk samples and the first allowed subband transition for the quantum wells. By collecting absorption spectra at different temperatures, the trend of the energy transitions was described by fitting a Varshni equation to them. The expected result of the quantum well always having slightly higher energy than its bulk counterpart was observed. An etalon effect also was observed in the quantum wells, caused by the cladding layers in those samples. Photoluminescence spectra also were collected to characterize the change in electron temperature (Te) as the excitation power was varied. As expected, electron temperature increased with increasing power and increasing temperature. The start of the longitudinal optical phonon-dominated cooling range due to excitation intensity also was determined for the samples from 1/Te. It was found that the quantum well required higher excitation intensities to achieve this effect. Lastly, the energy transitions found for the quantum well samples were compared to those found by a finite element method model. The predicted energies all had a constant value above what was found experimentally, indicating the program had a translation error within it. (10 tables, 47 figures, 18 refs.)
Author: Kai-An Cheng
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ISBN:
Category : Indium arsenide
Languages : en
Pages : 190
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Author:
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Category : Aeronautics
Languages : en
Pages : 652
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Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author: Rajesh Kumar Chellappan
Publisher:
ISBN:
Category :
Languages : en
Pages : 143
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Author: United States. Congress. Senate. Committee on Armed Services
Publisher:
ISBN:
Category : United States
Languages : en
Pages : 598
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