Magnetotransport Study of a High Mobility Two-dimensional Electron Gas PDF Download
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Author: Girish Bohra
Publisher:
ISBN:
Category :
Languages : en
Pages : 59
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Book Description
This thesis is focused on an experimental study of the electrical properties of a two-dimensional electron gas formed in a GaAs/AlGaAs heterostructure. Low temperature magneto-transport measurements are used to characterize the carrier density and mobility of this system. An extensive study of the temperature and current dependence of quantum-mechanical transport effects, observable at very low temperatures, is performed in the temperature range of 4.2-100 K, for measurement currents in the range of 10 nA- 100℗æA. The well-known decrease in the amplitude of the Shubnikov-de Haas effect, and an accompanying increase in the onset magnetic field of these oscillations, with increasing temperature, as well as a simultaneous suppression of the quantum-Hall effect, is observed. Similar behavior is found on increasing the measurement current. An analysis of the insulator to quantum Hall transition (I-QH), occurring in the two-dimensional electron gas at low perpendicular magnetic fields, is also reported, along with the results of investigations of electron heating based on the measurements of the energy-loss rate. This study shows that the direct I-QH transition does not always correspond to the onset of strong localization, with clear Shubnikov-de Haas oscillations being observed in the insulating regime. A linear dependence of the electron energy-loss rate and electron temperature in the temperature range of 4.2-40 K is determined, indicating that the main mechanism for electron energy relaxation is acoustic phonon scattering.
Author: Girish Bohra
Publisher:
ISBN:
Category :
Languages : en
Pages : 59
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Book Description
This thesis is focused on an experimental study of the electrical properties of a two-dimensional electron gas formed in a GaAs/AlGaAs heterostructure. Low temperature magneto-transport measurements are used to characterize the carrier density and mobility of this system. An extensive study of the temperature and current dependence of quantum-mechanical transport effects, observable at very low temperatures, is performed in the temperature range of 4.2-100 K, for measurement currents in the range of 10 nA- 100℗æA. The well-known decrease in the amplitude of the Shubnikov-de Haas effect, and an accompanying increase in the onset magnetic field of these oscillations, with increasing temperature, as well as a simultaneous suppression of the quantum-Hall effect, is observed. Similar behavior is found on increasing the measurement current. An analysis of the insulator to quantum Hall transition (I-QH), occurring in the two-dimensional electron gas at low perpendicular magnetic fields, is also reported, along with the results of investigations of electron heating based on the measurements of the energy-loss rate. This study shows that the direct I-QH transition does not always correspond to the onset of strong localization, with clear Shubnikov-de Haas oscillations being observed in the insulating regime. A linear dependence of the electron energy-loss rate and electron temperature in the temperature range of 4.2-40 K is determined, indicating that the main mechanism for electron energy relaxation is acoustic phonon scattering.
Author: Giovanni Maria Galistu
Publisher:
ISBN: 9789090254494
Category :
Languages : en
Pages : 129
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Book Description
Author: Gavin Melhuish
Publisher:
ISBN:
Category :
Languages : en
Pages : 134
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Book Description
Author: Etienne De Poortere
Publisher:
ISBN:
Category :
Languages : en
Pages : 326
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Book Description
Author: C. K. Maiti
Publisher: World Scientific
ISBN: 9812709029
Category : Technology & Engineering
Languages : en
Pages : 385
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Book Description
Information technology has changed our society radically. Just as the integrated circuits have been the prime mover for electronics, high-speed transistors and semiconductor lasers based on heterostructures are now playing the same role in modern telecommunications. Professor Kroemer's conceptual work on heterostructures began in the early 1950s as he was looking for a way to improve transistor speed and performance. In the 1960s, he applied the same principles to the development of lasers and light-emitting diodes, showing that they could achieve continuous operation at room temperature OCo something thought impossible at that time. His deep fundamental scientific work has had a profound effect on technology and society, transforming and improving our lives.This reprint collection brings together Professor Kroemer's most important papers, presenting a comprehensive perspective of the field. It covers topics ranging from substrate materials, electronic properties, process technology, and devices, to circuits and applications. This reprint collection will help the reader identify the key stages in the development of heterostructure devices and lasers from early research through to its integration in current manufacturing. Devoted to R&D engineers and scientists who are actively involved in extending the nano- and microelectronics roadmap mainly via heterostructure engineering, this volume may also serve as a reference for postgraduate and research students."
Author: Serge Luryi
Publisher: John Wiley & Sons
ISBN: 047064933X
Category : Technology & Engineering
Languages : en
Pages : 448
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Book Description
In the summer of 2009, leading professionals from industry, government, and academia gathered for a free-spirited debate on the future trends of microelectronics. This volume represents the summary of their valuable contributions. Providing a cohesive exploration and holistic vision of semiconductor microelectronics, this text answers such questions as: What is the future beyond shrinking silicon devices and the field-effect transistor principle? Are there green pastures beyond the traditional semiconductor technologies? This resource also identifies the direction the field is taking, enabling microelectronics professionals and students to conduct research in an informed, profitable, and forward-looking fashion.
Author:
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 658
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Book Description
Author: Qinwei Shi
Publisher:
ISBN:
Category : Electron gas
Languages : en
Pages : 152
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Book Description
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2540
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Book Description
Author: J.D. Chadi
Publisher: Springer Science & Business Media
ISBN: 1461576822
Category : Science
Languages : en
Pages : 1580
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Book Description
The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6·1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.
