Low Temperature Silicon Oxide and Flourinated Silicon Oxide Films Prepared by Plasma Enhanced Chemical Vapor Deposition Using Disilane as Silicon Precursor PDF Download
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Author: Juho Song
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 236
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Author: Juho Song
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 236
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Author: Hsiao-Hui Chen
Publisher:
ISBN:
Category : Thin film devices
Languages : en
Pages : 336
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"Low Temperature Oxide (LTO) thin films were prepared using a Low Pressure Chemical Vapor Deposition process. The process was characterized by applying traditional statistical studies and response surface technique. The uniformities within wafer and from wafer to wafer were examined by determining the mean and the standard deviation of films thicknesses. Response surface methodology was employed to determine the optimum process conditions. Time, temperature and gas flow ratio were used as the experimental factors. Index of refraction and deposition rate were used as the experimental responses. Additionally, etch rate, density, dielectric constant and infrared (IR) spectra were found for the silicon dioxide films prepared at the determined optimum condition. The IR spectra were obtained by employing Fourier Transform Infrared Spectroscopy (FTIR). The average deposition rate was found to be 46 A per minute and the average index of refraction was 1.44. The calculated density, activation energy, etch rate, dielectric constant and dielectric strength agreed with reported values. A double metal test run was performed using LTO oxide. The results indicated that the recommended baseline LTO process is suitable for multilayer metallization processes."--Abstract.
Author: Zhongping Jin
Publisher:
ISBN:
Category : Fluorine
Languages : en
Pages : 274
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Author:
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ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 860
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Author:
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ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 872
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Category : Patents
Languages : en
Pages : 870
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Author:
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ISBN:
Category : Ceramics
Languages : en
Pages : 504
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Author:
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ISBN:
Category :
Languages : en
Pages :
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Depositions of high quality SiO[sub 2] and SnO[sub 2] films from the reaction of homoleptic amido precursors M(NMe[sub 2])4 (M = Si, Sn) and oxygen were carried out in an atmospheric pressure chemical vapor deposition r. The films were deposited on silicon, glass and quartz substrates at temperatures of 250 to 450C. The silicon dioxide films are stoichiometric (O/Si = 2.0) with less than 0.2 atom % C and 0.3 atom % N and have hydrogen contents of 9 [plus-minus] 5 atom %. They are deposited with growth rates from 380 to 900 [angstrom]/min. The refractive indexes of the SiO[sub 2] films are 1.46, and infrared spectra show a possible Si-OH peak at 950 cm[sup [minus]1]. X-Ray diffraction studies reveal that the SiO[sub 2] film deposited at 350C is amorphous. The tin oxide films are stoichiometric (O/Sn = 2.0) and contain less than 0.8 atom % carbon, and 0.3 atom % N. No hydrogen was detected by elastic recoil spectroscopy. The band gap for the SnO[sub 2] films, as estimated from transmission spectra, is 3.9 eV. The resistivities of the tin oxide films are in the range 10[sup [minus]2] to 10[sup [minus]3] [Omega]cm and do not vary significantly with deposition temperature. The tin oxide film deposited at 350C is cassitterite with some (101) orientation.
Author: Giridhar Nallapati
Publisher:
ISBN:
Category :
Languages : en
Pages : 108
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Author:
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ISBN:
Category :
Languages : en
Pages :
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