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Author: Chau-Chen Chen
Publisher:
ISBN:
Category :
Languages : en
Pages : 256
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Book Description
Author: Chau-Chen Chen
Publisher:
ISBN:
Category :
Languages : en
Pages : 256
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Book Description
Author: P. Joshi
Publisher: The Electrochemical Society
ISBN: 1566777259
Category : Science
Languages : en
Pages : 63
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Book Description
The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Novel Plasma Techniques for Low Temperature Processing of Thin Films for Flexible Electronics¿, held during the 215th meeting of The Electrochemical Society, in San Francisco, California from May 24 to 29, 2009.
Author: Michael M. Adachi
Publisher:
ISBN:
Category : Silicon
Languages : en
Pages : 146
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Book Description
Thin film amorphous silicon (a-Si) is a low cost alternative to crystalline silicon wafers used in solar cells. a-Si is advantageous in that it can be deposited onto low cost substrates such as glass or flexible polymers, is scalable to large areas, and uses low processing temperatures (
Author: Hsiao-Hui Chen
Publisher:
ISBN:
Category : Thin film devices
Languages : en
Pages : 336
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Book Description
"Low Temperature Oxide (LTO) thin films were prepared using a Low Pressure Chemical Vapor Deposition process. The process was characterized by applying traditional statistical studies and response surface technique. The uniformities within wafer and from wafer to wafer were examined by determining the mean and the standard deviation of films thicknesses. Response surface methodology was employed to determine the optimum process conditions. Time, temperature and gas flow ratio were used as the experimental factors. Index of refraction and deposition rate were used as the experimental responses. Additionally, etch rate, density, dielectric constant and infrared (IR) spectra were found for the silicon dioxide films prepared at the determined optimum condition. The IR spectra were obtained by employing Fourier Transform Infrared Spectroscopy (FTIR). The average deposition rate was found to be 46 A per minute and the average index of refraction was 1.44. The calculated density, activation energy, etch rate, dielectric constant and dielectric strength agreed with reported values. A double metal test run was performed using LTO oxide. The results indicated that the recommended baseline LTO process is suitable for multilayer metallization processes."--Abstract.
Author: Electrochemical society. Meeting
Publisher: The Electrochemical Society
ISBN: 1566778654
Category : Science
Languages : en
Pages : 950
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Book Description
This issue of ECS Transactions contains the peer-reviewed full length papers of the International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics held May 1-6, 2011 in Montreal as a part of the 219th Meeting of The Electrochemical Society. The papers address a very diverse range of topics. In addition to the deposition and characterization of the dielectrics, more specific topics addressed by the papers include applications, device characterization and reliability, interface states, interface traps, defects, transistor and gate oxide studies, and modeling.
Author: Krishna Seshan
Publisher: William Andrew
ISBN: 1437778747
Category : Technology & Engineering
Languages : en
Pages : 411
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Book Description
The Handbook of Thin Film Deposition is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, new materials for memory applications and methods for thin film optical processes. In a major restructuring, this edition of the handbook lays the foundations with an up-to-date treatment of lithography, contamination and yield management, and reliability of thin films. The established physical and chemical deposition processes and technologies are then covered, the last section of the book being devoted to more recent technological developments such as microelectromechanical systems, photovoltaic applications, digital cameras, CCD arrays, and optical thin films. A practical survey of thin film technologies aimed at engineers and managers involved in all stages of the process: design, fabrication, quality assurance and applications Covers core processes and applications in the semiconductor industry and new developments in the photovoltaic and optical thin film industries The new edition takes covers the transition taking place in the semiconductor world from Al/SiO2 to copper interconnects with low-k dielectrics Written by acknowledged industry experts from key companies in the semiconductor industry including Intel and IBM Foreword by Gordon E. Moore, co-founder of Intel and formulator of the renowned ‘Moore’s Law’ relating to the technology development cycle in the semiconductor industry
Author: Krishna Seshan
Publisher: William Andrew
ISBN: 1437778739
Category : Science
Languages : en
Pages : 412
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Book Description
Resumen: The 2nd edition contains new chapters on contamination and contamination control that describe the basics and the issues. Another new chapter on meteorology explains the growth of sophisticated, automatic tools capable of measuring thickness and spacing of sub-micron dimensions. The book also covers PVD, laser and e-beam assisted deposition, MBE, and ion beam methods to bring together physical vapor deposition techniques. Two entirely new areas are focused on: chemical mechanical polishing, which helps attain the flatness that is required by modern lithography methods, and new materials used for interconnect dielectric materials, specifically organic polyimide materials.
Author: Mehmet C. Öztürk
Publisher: The Electrochemical Society
ISBN: 9781566774062
Category : Technology & Engineering
Languages : en
Pages : 444
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Book Description
Author: Yue Kuo
Publisher: Springer Science & Business Media
ISBN: 9781402075063
Category : Thin film transistors
Languages : en
Pages : 528
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Book Description
This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
Author: I.W. Boyd
Publisher: Elsevier
ISBN: 0444596801
Category : Technology & Engineering
Languages : en
Pages : 552
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Book Description
The contributions in this volume reflect not only the growing understanding of the underlying mechanisms controlling the various reactions in laser surface processing, but also the potential of several developing applications of direct processing. The most notable trend in the field currently is the technique of laser ablation, which is reported in almost a quarter of the papers in this volume. Whilst by no means a new phenomenon, attention has until recent years remained in the area of lithography and UV-sensitive materials. The growth in interest lies in the use of the technique to grow multi-component thin films and multi-layers. A number of papers on the topic of process diagnostics and in-situ measurements are also included. The theme of these annual meetings is centred around the physical and chemical modification of thin films and surfaces induced by the action of photon, ion, neutral, or electron beams in a variety of environments. Consequently these proceedings provide a comprehensive and unified presentation of the latest developments in this field.
