Author: Brent Andrew Sperling
Publisher:
ISBN:
Category :
Languages : en
Pages : 127
Book Description
Despite the widespread use of hydrogenated amorphous silicon (a-Si:H), the fundamental surface processes during film growth are not well understood. One approach to studying these mechanisms is to analyze the surface morphology that results from their action. In this dissertation, hot-wire chemical vapor deposition is used to deposit a-Si:H thin films. Both post-deposition atomic force microscopy (AFM) and in situ spectroscopic ellipsometry (SE) are used to characterize the surface morphology and its dynamics. Results of this work indicate that the surface morphology is shaped by geometric shadowing of growth particles and thermally-activated smoothening mechanisms. For films grown at low temperature, the local slope of the surface is found to exhibit power law scaling with time that is consistent with anomalous roughening behavior also observed in models that include shadowing. A temperature-dependent transition in roughening behavior is observed, and an activation energy is extracted that agrees with previous estimates for SiH3 surface diffusion. Additionally, a-Si:H grown on rough substrates is examined. Smoothening at short lateral length scales is observed simultaneously with global roughening. Behavior is found to generally agree with deterministic models in the literature. This work also explores the difference between SE and AFM in how roughness is measured. Rayleigh-Rice theory (vector perturbation theory) is used to calculate ellipsometric data that is subsequently compared to the usual method of using an effective medium layer to approximate roughness. SE measurements are found to critically depend on both the vertical extent of roughness and the root-mean-squared slope of the surface.
Kinetic Roughening During Hot-wire Chemical Vapor Deposition of Hydrogenated Amorphous Silicon
Author: Brent Andrew Sperling
Publisher:
ISBN:
Category :
Languages : en
Pages : 127
Book Description
Despite the widespread use of hydrogenated amorphous silicon (a-Si:H), the fundamental surface processes during film growth are not well understood. One approach to studying these mechanisms is to analyze the surface morphology that results from their action. In this dissertation, hot-wire chemical vapor deposition is used to deposit a-Si:H thin films. Both post-deposition atomic force microscopy (AFM) and in situ spectroscopic ellipsometry (SE) are used to characterize the surface morphology and its dynamics. Results of this work indicate that the surface morphology is shaped by geometric shadowing of growth particles and thermally-activated smoothening mechanisms. For films grown at low temperature, the local slope of the surface is found to exhibit power law scaling with time that is consistent with anomalous roughening behavior also observed in models that include shadowing. A temperature-dependent transition in roughening behavior is observed, and an activation energy is extracted that agrees with previous estimates for SiH3 surface diffusion. Additionally, a-Si:H grown on rough substrates is examined. Smoothening at short lateral length scales is observed simultaneously with global roughening. Behavior is found to generally agree with deterministic models in the literature. This work also explores the difference between SE and AFM in how roughness is measured. Rayleigh-Rice theory (vector perturbation theory) is used to calculate ellipsometric data that is subsequently compared to the usual method of using an effective medium layer to approximate roughness. SE measurements are found to critically depend on both the vertical extent of roughness and the root-mean-squared slope of the surface.
Publisher:
ISBN:
Category :
Languages : en
Pages : 127
Book Description
Despite the widespread use of hydrogenated amorphous silicon (a-Si:H), the fundamental surface processes during film growth are not well understood. One approach to studying these mechanisms is to analyze the surface morphology that results from their action. In this dissertation, hot-wire chemical vapor deposition is used to deposit a-Si:H thin films. Both post-deposition atomic force microscopy (AFM) and in situ spectroscopic ellipsometry (SE) are used to characterize the surface morphology and its dynamics. Results of this work indicate that the surface morphology is shaped by geometric shadowing of growth particles and thermally-activated smoothening mechanisms. For films grown at low temperature, the local slope of the surface is found to exhibit power law scaling with time that is consistent with anomalous roughening behavior also observed in models that include shadowing. A temperature-dependent transition in roughening behavior is observed, and an activation energy is extracted that agrees with previous estimates for SiH3 surface diffusion. Additionally, a-Si:H grown on rough substrates is examined. Smoothening at short lateral length scales is observed simultaneously with global roughening. Behavior is found to generally agree with deterministic models in the literature. This work also explores the difference between SE and AFM in how roughness is measured. Rayleigh-Rice theory (vector perturbation theory) is used to calculate ellipsometric data that is subsequently compared to the usual method of using an effective medium layer to approximate roughness. SE measurements are found to critically depend on both the vertical extent of roughness and the root-mean-squared slope of the surface.
Hot Wire Chemical Vapor Deposition of Inorganic and Organic Thin Films for Solar Cells
Author: Gillian Ann Zaharias
Publisher:
ISBN:
Category :
Languages : en
Pages : 242
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 242
Book Description
Hot-wire Chemical Vapour Deposition (HWCVD) Hydrogenated Amorphous Silicon (a-Si:H) Compact 3D Slope Waveguide Interconnect for Verticcal Coupling in Multilayer Silicon Photonics Platform
Author: Dk Rafidah Pg Hj Petra
Publisher:
ISBN:
Category :
Languages : en
Pages : 146
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 146
Book Description
Ellipsometry at the Nanoscale
Author: Maria Losurdo
Publisher: Springer Science & Business Media
ISBN: 3642339565
Category : Technology & Engineering
Languages : en
Pages : 740
Book Description
This book presents and introduces ellipsometry in nanoscience and nanotechnology making a bridge between the classical and nanoscale optical behaviour of materials. It delineates the role of the non-destructive and non-invasive optical diagnostics of ellipsometry in improving science and technology of nanomaterials and related processes by illustrating its exploitation, ranging from fundamental studies of the physics and chemistry of nanostructures to the ultimate goal of turnkey manufacturing control. This book is written for a broad readership: materials scientists, researchers, engineers, as well as students and nanotechnology operators who want to deepen their knowledge about both basics and applications of ellipsometry to nanoscale phenomena. It starts as a general introduction for people curious to enter the fields of ellipsometry and polarimetry applied to nanomaterials and progresses to articles by experts on specific fields that span from plasmonics, optics, to semiconductors and flexible electronics. The core belief reflected in this book is that ellipsometry applied at the nanoscale offers new ways of addressing many current needs. The book also explores forward-looking potential applications.
Publisher: Springer Science & Business Media
ISBN: 3642339565
Category : Technology & Engineering
Languages : en
Pages : 740
Book Description
This book presents and introduces ellipsometry in nanoscience and nanotechnology making a bridge between the classical and nanoscale optical behaviour of materials. It delineates the role of the non-destructive and non-invasive optical diagnostics of ellipsometry in improving science and technology of nanomaterials and related processes by illustrating its exploitation, ranging from fundamental studies of the physics and chemistry of nanostructures to the ultimate goal of turnkey manufacturing control. This book is written for a broad readership: materials scientists, researchers, engineers, as well as students and nanotechnology operators who want to deepen their knowledge about both basics and applications of ellipsometry to nanoscale phenomena. It starts as a general introduction for people curious to enter the fields of ellipsometry and polarimetry applied to nanomaterials and progresses to articles by experts on specific fields that span from plasmonics, optics, to semiconductors and flexible electronics. The core belief reflected in this book is that ellipsometry applied at the nanoscale offers new ways of addressing many current needs. The book also explores forward-looking potential applications.
Evolution of Thin Film Morphology
Author: Matthew Pelliccione
Publisher: Springer Science & Business Media
ISBN: 0387751092
Category : Technology & Engineering
Languages : en
Pages : 206
Book Description
The focus of this book is on modeling and simulations used in research on the morphological evolution during film growth. The authors emphasize the detailed mathematical formulation of the problem. The book will enable readers themselves to set up a computational program to investigate specific topics of interest in thin film deposition. It will benefit those working in any discipline that requires an understanding of thin film growth processes.
Publisher: Springer Science & Business Media
ISBN: 0387751092
Category : Technology & Engineering
Languages : en
Pages : 206
Book Description
The focus of this book is on modeling and simulations used in research on the morphological evolution during film growth. The authors emphasize the detailed mathematical formulation of the problem. The book will enable readers themselves to set up a computational program to investigate specific topics of interest in thin film deposition. It will benefit those working in any discipline that requires an understanding of thin film growth processes.
Dissertation Abstracts International
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 960
Book Description
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 960
Book Description
Plasma Enhanced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Thin Films with Nanocrystalline Inclusions
Author: Siri Suzanne Thompson
Publisher:
ISBN:
Category :
Languages : en
Pages : 138
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 138
Book Description
Electrical & Electronics Abstracts
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2240
Book Description
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2240
Book Description
Deposition Kinetics of Hydrogenated Amorphous Silicon and Silicon-germanium Thin Films
Author: James Robert Doyle
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 400
Book Description
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 400
Book Description
A Simple Method for Preparing Hydrogenated Amorphous Silicon Films by Chemical Vapour Deposition at Atmospheric Pressure
Author: Frank Browning Ellis
Publisher:
ISBN:
Category : Semiconductor films
Languages : en
Pages : 197
Book Description
Publisher:
ISBN:
Category : Semiconductor films
Languages : en
Pages : 197
Book Description