Kinetic Modeling and Measurement of Active Species During Dry Etching for VLSI Processes PDF Download
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Author: Paul K. Aum
Publisher:
ISBN:
Category :
Languages : en
Pages : 372
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Author: Paul K. Aum
Publisher:
ISBN:
Category :
Languages : en
Pages : 372
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Book Description
Author: K. S. Uhm
Publisher:
ISBN:
Category :
Languages : en
Pages : 6
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Book Description
A simple kinetic dry etching model accounting for generation, loss, and transport of the reactive and by-product species is developed. To demonstrate and evaluate the model, the etching of silicon using sulfur hexafluonde + oxygen + argon in the plasma etch mode is investigated. Keywords: Silicon.
Author: A.J. van Roosmalen
Publisher: Springer Science & Business Media
ISBN: 148992566X
Category : Science
Languages : en
Pages : 247
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Book Description
This book has been written as part of a series of scientific books being published by Plenum Press. The scope of the series is to review a chosen topic in each volume. To supplement this information, the abstracts to the most important references cited in the text are reprinted, thus allowing the reader to find in-depth material without having to refer to many additional publications. This volume is dedicated to the field of dry (plasma) etching, as applied in silicon semiconductor processing. Although a number of books have appeared dealing with this area of physics and chemistry, these all deal with parts of the field. This book is unique in that it gives a compact, yet complete, in-depth overview of fundamentals, systems, processes, tools, and applications of etching with gas plasmas for VLSI. Examples are given throughout the fundamental sections, in order to give the reader a better insight in the meaning and magnitude of the many parameters relevant to dry etching. Electrical engineering concepts are emphasized to explain the pros and cons of reactor concepts and excitation frequency ranges. In the description of practical applications, extensive use is made of cross-referencing between processes and materials, as well as theory and practice. It is thus intended to provide a total model for understanding dry etching. The book has been written such that no previous knowledge of the subject is required. It is intended as a review of all aspects of dry etching for silicon semiconductor processing.
Author: J. W. Coburn
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 492
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Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 768
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Author:
Publisher:
ISBN:
Category : Chemical abstracts
Languages : en
Pages : 2682
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Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 820
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Author: Nathan Philip Marchack
Publisher:
ISBN:
Category :
Languages : en
Pages : 307
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Book Description
In this work, a comprehensive framework for predicting etching behavior is developed using the test case of hafnium lanthanate (HfxLayOz) in Cl2/BCl3 chemistry, starting from detailed thermodynamic analysis in the form of volatility diagrams. Through these calculations, it was predicted that at typical plasma reactor operating pressures, the reactions of molecular Cl2 and Cl radicals with La2O3 and HfO2 could generate sufficiently high partial pressures of OxCly for measurable material removal to occur. The etch rate of Hf0.25La0.12O0.63 as a function of ion energy was characterized in situ using a quartz crystal microbalance. The etch rate data was found to exhibit a dual ion energy dependence with a maximum etch rate of ~27 Å/min at Eion = 175 eV. The overall etch rate was found to be approximately half that of a pure HfO2 film etched at the same conditions, due to the formation of non-volatile LaClx compounds. QMS measurements of HfLaO in Cl2 chemistry showed LaOCl and LaCl as the primary La-containing etch products. XPS analysis of pure La2O3 films provided further evidence of this hypothesis, showing significant Cl retention (~10%) compared to HfLaO and also revealing the presence of Cl-O-La bonding. A kinetics-based bulk scale (TML) model was fit to the aforementioned experimental data and good agreement was shown between the TML model's simulated results and etch rate data. An additional degree of validation was provided through a comparison of the model's predicted composition of the surface mixing layer and the XPS-measured film compositions after plasma exposure. The final validation of this approach was to assess the fitted kinetic parameters for complex oxide etching in Cl-based chemistry (such as reaction rate coefficients, threshold energies and sticking probabilities) at feature scale levels. The results from the TML model were coupled to a Monte Carlo based feature profile simulator and used to predict the variation of the etched feature profiles of Hf0.25La0.12O0.63 films for varying aspect ratios (1.5, 3 and 6) and ion energies (75, 100 and 175 eV). In order to compare to experimental results, features of varying aspect ratio were achieved using an e-beam tool to pattern a ZEP520A photoresist mask on HfLaO followed by etching in Cl2 . Good agreement was achieved with the etched profile at 100 eV and AR = 5. As a test of the model's ability to handle variations in gas chemistry with a material system besides that of high-k dielectrics, this methodology was also applied to the shallow trench isolation process (Si etching in Cl22/O2 chemistry). The model showed good fitting of the major process parameters (etch rate, etch product ratios and surface composition) and showed an ability to predict the profile variation with 0, 2, 6 and 8% oxygen addition to a pure Cl2 plasma for the etching of Si.
Author: Kazuo Nojiri
Publisher: Springer
ISBN: 3319102958
Category : Technology & Engineering
Languages : en
Pages : 126
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Book Description
This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits. The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes. The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning etc.
Author:
Publisher:
ISBN:
Category : Government reports announcements & index
Languages : en
Pages : 1440
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Book Description
