Author: R. J. Malik
Publisher:
ISBN:
Category : Indium phosphide
Languages : en
Pages : 214

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Author: Kwan-To Ip
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 318

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Author: Lester F. Eastman
Publisher:
ISBN:
Category :
Languages : en
Pages : 8

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This investigation covers an effort directed at the problem of obtaining Indium phosphide, by liquid phase epitaxy, for use in high-electric-field applications such as in microwave electron devices. It covers the area of determining the growth rate, the area of obtaining high purity, the area of alloyed contacts, and the determination of high-field properties. It is concluded that multiple-layer InP can be grown predictably and repeatably by liquid phase epitaxy using a multiple-well boat with the substrate on the bottom of the melt. It is also concluded that the density of total ionized impurities is the major remaining problem preventing the use of liquid phase epitaxial InP in microwave device applications. It also appears that carbon, as well as silicon, may contribute substantially to this impurity density.

Author: Robert K. Willardson
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 432

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Annotation Scientists from France, Japan, and the US summarize the advances in direct synthesis, in large crystal growth with low dislocation densities, and in epitaxial layer growth. They provide a description of substrate preparation and evaluation, and methods for the reduction of dislocations and measurement of stoichiometric defects. Topics include the state of the art in liquid encapsulated Czochralski (LEC), growth of dislocation-free InP, epitaxial InP grown by the hydride vapor phase process, commercial production of InP single crystals and substrates, and the use of low pressure MOCVD to prepare epitaxial layers of InP, GaInAs and GaInP heterostructures on InP substrates. Annotation(c) 2003 Book News, Inc., Portland, OR (booknews.com).

Author: W. H. Shafer
Publisher: Springer Science & Business Media
ISBN: 1475757859
Category : Science
Languages : en
Pages : 307

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Book Description
Masters Theses in the Pure and Applied Sciences was first conceived, published, and dis seminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the ac tivity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all concerned if the printing and distribution of the volume were handled by an international publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Corporation of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 24 (thesis year 1979) a total of 10,033 theses titles from 26 Canadian and 215 United States universities. We are sure that this broader base for theses titles reported will greatly enhance the value of this important annual reference work. While Volume 24 reports these submitted in 1979, on occasion, certain universities do report theses submitted in previous years but not reported at the time.

Author:
Publisher:
ISBN:
Category : Military research
Languages : en
Pages : 652

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Author: Sunil Bhaskar Phatak
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 270

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Author: Rajendra Singh
Publisher:
ISBN:
Category : Electronics
Languages : en
Pages : 672

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Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1186

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Author: Thomas John Roth
Publisher:
ISBN:
Category :
Languages : en
Pages : 92

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