Author: Eric Silkowski
Publisher:
ISBN: 9781423576570
Category : Gallium nitride
Languages : en
Pages : 330
Book Description
Luminescence and absorption measurements were used to demonstrate the efficacy of ion implantation for introducing various classes of dopants into GaN. A wide range of implantation and annealing studies were performed with several dopant species (Ar, Zn, C, O, Si, Be, Mg, Nd, Er). Room temperature ion implantation was performed on MOCVD- and MBE-grown GaN samples at energies between 100 and 1150 keV with doses ranging from 1 x 10(exp 13) to 1 x 10 (exp 15)/sq cm. Conventional furnace annealing in flowing NH3 or N2 gas resulted in good implantation damage recovery at an annealing temperature of 1000 deg C for 90 min. Annealing temperature was found to be the determining factor in implantation damage recovery. It was discovered that surface degradation occurred for annealing in an NH3 environment at temperatures above 1000 deg C. An optimal annealing temperature of 1000 deg C and an optimal annealing gas environment of NH3 were found for the optical activation of Zn, Mg, Er, and Nd. Several new luminescence features were observed for the various dopants. Zn- implanted GaN was found to have a strong luminescence peak in the blue at 2.86 eV. The energetic location and width of this luminescence peak was insensitive to temperature changes and excitation intensity changes. These properties suggested that an internal Zn center transition was responsible.
Luminescence Study of Ion-Implanted Gallium Nitride
Author: Eric Silkowski
Publisher:
ISBN: 9781423576570
Category : Gallium nitride
Languages : en
Pages : 330
Book Description
Luminescence and absorption measurements were used to demonstrate the efficacy of ion implantation for introducing various classes of dopants into GaN. A wide range of implantation and annealing studies were performed with several dopant species (Ar, Zn, C, O, Si, Be, Mg, Nd, Er). Room temperature ion implantation was performed on MOCVD- and MBE-grown GaN samples at energies between 100 and 1150 keV with doses ranging from 1 x 10(exp 13) to 1 x 10 (exp 15)/sq cm. Conventional furnace annealing in flowing NH3 or N2 gas resulted in good implantation damage recovery at an annealing temperature of 1000 deg C for 90 min. Annealing temperature was found to be the determining factor in implantation damage recovery. It was discovered that surface degradation occurred for annealing in an NH3 environment at temperatures above 1000 deg C. An optimal annealing temperature of 1000 deg C and an optimal annealing gas environment of NH3 were found for the optical activation of Zn, Mg, Er, and Nd. Several new luminescence features were observed for the various dopants. Zn- implanted GaN was found to have a strong luminescence peak in the blue at 2.86 eV. The energetic location and width of this luminescence peak was insensitive to temperature changes and excitation intensity changes. These properties suggested that an internal Zn center transition was responsible.
Publisher:
ISBN: 9781423576570
Category : Gallium nitride
Languages : en
Pages : 330
Book Description
Luminescence and absorption measurements were used to demonstrate the efficacy of ion implantation for introducing various classes of dopants into GaN. A wide range of implantation and annealing studies were performed with several dopant species (Ar, Zn, C, O, Si, Be, Mg, Nd, Er). Room temperature ion implantation was performed on MOCVD- and MBE-grown GaN samples at energies between 100 and 1150 keV with doses ranging from 1 x 10(exp 13) to 1 x 10 (exp 15)/sq cm. Conventional furnace annealing in flowing NH3 or N2 gas resulted in good implantation damage recovery at an annealing temperature of 1000 deg C for 90 min. Annealing temperature was found to be the determining factor in implantation damage recovery. It was discovered that surface degradation occurred for annealing in an NH3 environment at temperatures above 1000 deg C. An optimal annealing temperature of 1000 deg C and an optimal annealing gas environment of NH3 were found for the optical activation of Zn, Mg, Er, and Nd. Several new luminescence features were observed for the various dopants. Zn- implanted GaN was found to have a strong luminescence peak in the blue at 2.86 eV. The energetic location and width of this luminescence peak was insensitive to temperature changes and excitation intensity changes. These properties suggested that an internal Zn center transition was responsible.
Electrical Activation Studies of Ion Implanted Gallium Nitride
Author: James A. Fellows
Publisher:
ISBN: 9781423526537
Category : Ion implantation
Languages : en
Pages : 221
Book Description
A comprehensive and systematic electrical activation study of Si- implanted GaN was performed as a function of ion implantation dose, anneal temperature, and implantation temperature. Additionally, Mg-implanted GaN was also investigated. Temperature-dependent Hall effect measurements and photoluminescence (PL) spectra were used to characterize the samples. GaN wafers capped with AlN were implanted with Si ions at doses ranging from 1x1013 to 5x1015 cm-2 and annealed from 1050 to 1350 oC. The optimum anneal temperature for samples implanted with the higher Si doses is around 1350 oC, exhibiting nearly 100% electrical activation efficiency. Exceptional mobilities and carrier concentrations were obtained on all Si-implanted samples. PL spectra revealed nearly complete implantation damage recovery as well as the nature of the yellow luminescence plaguing nearly all Si-doped GaN. Additionally, GaN wafers were implanted with Mg and various coimplants and annealed from 1100 to 1350 oC. All of the Mg-implanted and most of the Mg-coimplanted GaN samples became extremely resistive, and did not show definite p-type conductivity even after annealing at 1350 oC, remaining highly resistive even at a sample temperature as high as 800 K. A dominant 2.36 eV green luminescence band observed in the PL spectra of all Mg-implanted samples is attributed to a Mg-related deep complex DAP transition. The inefficient electrical activation of Mg acceptors implanted into GaN is attributed to these Mg-related deep complexes.
Publisher:
ISBN: 9781423526537
Category : Ion implantation
Languages : en
Pages : 221
Book Description
A comprehensive and systematic electrical activation study of Si- implanted GaN was performed as a function of ion implantation dose, anneal temperature, and implantation temperature. Additionally, Mg-implanted GaN was also investigated. Temperature-dependent Hall effect measurements and photoluminescence (PL) spectra were used to characterize the samples. GaN wafers capped with AlN were implanted with Si ions at doses ranging from 1x1013 to 5x1015 cm-2 and annealed from 1050 to 1350 oC. The optimum anneal temperature for samples implanted with the higher Si doses is around 1350 oC, exhibiting nearly 100% electrical activation efficiency. Exceptional mobilities and carrier concentrations were obtained on all Si-implanted samples. PL spectra revealed nearly complete implantation damage recovery as well as the nature of the yellow luminescence plaguing nearly all Si-doped GaN. Additionally, GaN wafers were implanted with Mg and various coimplants and annealed from 1100 to 1350 oC. All of the Mg-implanted and most of the Mg-coimplanted GaN samples became extremely resistive, and did not show definite p-type conductivity even after annealing at 1350 oC, remaining highly resistive even at a sample temperature as high as 800 K. A dominant 2.36 eV green luminescence band observed in the PL spectra of all Mg-implanted samples is attributed to a Mg-related deep complex DAP transition. The inefficient electrical activation of Mg acceptors implanted into GaN is attributed to these Mg-related deep complexes.
Ion Implantation in Gallium Nitride
Author: Eric Porter Carlson
Publisher:
ISBN:
Category : Ion implantation
Languages : en
Pages : 486
Book Description
Publisher:
ISBN:
Category : Ion implantation
Languages : en
Pages : 486
Book Description
Ion Implantation Into Gallium Nitride
Author: C. Ronning
Publisher:
ISBN:
Category :
Languages : en
Pages : 37
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 37
Book Description
Ion Implantation in Gallium Nitride
Author: Yuejun Sun
Publisher:
ISBN:
Category : Gallium nitride
Languages : en
Pages : 180
Book Description
Publisher:
ISBN:
Category : Gallium nitride
Languages : en
Pages : 180
Book Description
Selective Area P-type Doping in Gallium Nitride Using Ion Implantation for High Power Applications
Author: Yekan Wang
Publisher:
ISBN:
Category :
Languages : en
Pages : 104
Book Description
Magnesium ion implantation and subsequent activation annealing shows promise as an effective p-type doping method in Gallium Nitride (GaN). This dissertation relates implant-induced defects and the electrical performance. The implantation process introduces an elastic strain purely orthogonal to the (0001). Complete strain recovery is achieved by annealing at 1300 °C for 10 min (one GPa N2 overpressure) for dose level up to 1 1015 cm-2. However, extended defects such as stacking faults, dislocation loops, and inversion domains form during the anneal. Critical extended defects in the form of inversion domains were found to contain electrically inactive Mg after annealing at temperatures of 1300 °C (one GPa N2 overpressure), which results in a low dopant activation efficiency. A key finding of this work was to demonstrate that annealing at temperatures above 1300 °C eliminates the presence of the Mg-rich inversion domains. While other residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis shows no sign of Mg segregation at dislocation loops or other defects. Meanwhile, an overall decreasing trend in the dislocation loop size and density is observed after annealing at the higher temperatures and longer times. Electrical measurements show that annealing at 1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C, which points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperatures (e"1400 °C) annealing cycles to activate Mg acceptors. Novel characterization methods combining high resolution x-ray scattering and transmission electron microscopy were developed to understand the implant-induced strain recovery process and the evolution of extended defect structures after the dopant activation anneal. It was found that homoepitaxial GaN on high quality native substrates is necessary for clearly assessing the implant-induced defects by separating them from the pre-existing intrinsic defects. Results from this work are expected to bring the understanding of the key processing steps to achieve high activation efficiency selective area p-type doping for vertical GaN device structures in a scalable framework
Publisher:
ISBN:
Category :
Languages : en
Pages : 104
Book Description
Magnesium ion implantation and subsequent activation annealing shows promise as an effective p-type doping method in Gallium Nitride (GaN). This dissertation relates implant-induced defects and the electrical performance. The implantation process introduces an elastic strain purely orthogonal to the (0001). Complete strain recovery is achieved by annealing at 1300 °C for 10 min (one GPa N2 overpressure) for dose level up to 1 1015 cm-2. However, extended defects such as stacking faults, dislocation loops, and inversion domains form during the anneal. Critical extended defects in the form of inversion domains were found to contain electrically inactive Mg after annealing at temperatures of 1300 °C (one GPa N2 overpressure), which results in a low dopant activation efficiency. A key finding of this work was to demonstrate that annealing at temperatures above 1300 °C eliminates the presence of the Mg-rich inversion domains. While other residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis shows no sign of Mg segregation at dislocation loops or other defects. Meanwhile, an overall decreasing trend in the dislocation loop size and density is observed after annealing at the higher temperatures and longer times. Electrical measurements show that annealing at 1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C, which points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperatures (e"1400 °C) annealing cycles to activate Mg acceptors. Novel characterization methods combining high resolution x-ray scattering and transmission electron microscopy were developed to understand the implant-induced strain recovery process and the evolution of extended defect structures after the dopant activation anneal. It was found that homoepitaxial GaN on high quality native substrates is necessary for clearly assessing the implant-induced defects by separating them from the pre-existing intrinsic defects. Results from this work are expected to bring the understanding of the key processing steps to achieve high activation efficiency selective area p-type doping for vertical GaN device structures in a scalable framework
Ion Implantation Into Gan and Alinn
Author: Abdul Majid
Publisher: LAP Lambert Academic Publishing
ISBN: 9783845474991
Category :
Languages : en
Pages : 168
Book Description
A detailed and systematic study of ion implanted MOCVD grown wurtzite gallium nitride (GaN) and aluminum indium nitride (AlInN) is conducted. As-grown samples were characterized using XRD and Hall measurements to check the structural and electrical properties of the samples. Neon (Ne), manganese (Mn) and cerium (Ce) ions were implanted into the materials with different doses in ranges 1014 9x1015, 1014 5x1016 and 3x1014 2x1015cm-2 respectively. Using rapid thermal annealing (RTA) furnace implanted GaN samples were annealed at 800, 850, 900 and 1000oC and implanted AlInN samples were annealed at 750 and 850 oC for lattice recovery and activation of the dopants. Structural and optical characterizations were made using Rutherford backscattering spectroscopy (RBS), X-Ray diffraction (XRD), Photoluminescence (PL), Optical transmission and Raman scattering spectroscopy. Moreover, magnetic characterization of Mn and Ce implanted samples was also carried out with vibrating sample magnetometer (VSM) and superconducting quantum interference device (SQUID)."
Publisher: LAP Lambert Academic Publishing
ISBN: 9783845474991
Category :
Languages : en
Pages : 168
Book Description
A detailed and systematic study of ion implanted MOCVD grown wurtzite gallium nitride (GaN) and aluminum indium nitride (AlInN) is conducted. As-grown samples were characterized using XRD and Hall measurements to check the structural and electrical properties of the samples. Neon (Ne), manganese (Mn) and cerium (Ce) ions were implanted into the materials with different doses in ranges 1014 9x1015, 1014 5x1016 and 3x1014 2x1015cm-2 respectively. Using rapid thermal annealing (RTA) furnace implanted GaN samples were annealed at 800, 850, 900 and 1000oC and implanted AlInN samples were annealed at 750 and 850 oC for lattice recovery and activation of the dopants. Structural and optical characterizations were made using Rutherford backscattering spectroscopy (RBS), X-Ray diffraction (XRD), Photoluminescence (PL), Optical transmission and Raman scattering spectroscopy. Moreover, magnetic characterization of Mn and Ce implanted samples was also carried out with vibrating sample magnetometer (VSM) and superconducting quantum interference device (SQUID)."
Luminescence Studies of Ion-Implanted Gallium Nitride and Aluminum Gallium Nitride
Author: Erin N. Claunch
Publisher:
ISBN: 9781423548287
Category : Aluminum nitride
Languages : en
Pages : 63
Book Description
Recently, research on the wide bandgap semiconductors such as GaN and Al(x)Ga(1-x)N became very popular for their applications on various devices. Therefore comprehensive and systematic luminescence studies of Si implanted Al(x)Ga(1-x)N, Mg doped GaN, and Si+N implanted GaN grown on sapphire substrates by molecular beam epitaxial method have been made as a function of ion dose and anneal temperature.
Publisher:
ISBN: 9781423548287
Category : Aluminum nitride
Languages : en
Pages : 63
Book Description
Recently, research on the wide bandgap semiconductors such as GaN and Al(x)Ga(1-x)N became very popular for their applications on various devices. Therefore comprehensive and systematic luminescence studies of Si implanted Al(x)Ga(1-x)N, Mg doped GaN, and Si+N implanted GaN grown on sapphire substrates by molecular beam epitaxial method have been made as a function of ion dose and anneal temperature.
Structural Characterization of Ion Implanted Gallium Nitride
Author: Chang Liu
Publisher:
ISBN: 9783826571077
Category :
Languages : en
Pages : 112
Book Description
Publisher:
ISBN: 9783826571077
Category :
Languages : en
Pages : 112
Book Description
Structural Stability of Gallium Nitride Doped with Rare Earths by Ion Implantation
Author: Tomasz Wójtowicz (elektrotechnika)
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description