Investigation of the Electrical Properties of Ion-implanted Gallium Arsenide as a Function of Temperature PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Investigation of the Electrical Properties of Ion-implanted Gallium Arsenide as a Function of Temperature PDF full book. Access full book title Investigation of the Electrical Properties of Ion-implanted Gallium Arsenide as a Function of Temperature by Md. Shah Alam. Download full books in PDF and EPUB format.
Author: Md. Shah Alam
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 130
Get Book Here
Book Description
Author: Md. Shah Alam
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 130
Get Book Here
Book Description
Author: A. K. M. Matior Rahman
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 152
Get Book Here
Book Description
Author: Shanmugam Sundaram
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 182
Get Book Here
Book Description
Author: Richard Dana Pashley
Publisher:
ISBN:
Category : Doped semiconductors
Languages : en
Pages : 123
Get Book Here
Book Description
Part I: With the advent of ion implantation, it has become possible to introduce many new dopant species into silicon. The electrical behavior of implanted species displaying deep energy levels was investigated. Part II: Ion implantation was investigated as a doping process for the fabrication of submicron n-type layers in GaAs.
Author: Wade H. Shafer
Publisher: Springer Science & Business Media
ISBN: 1461573912
Category : Science
Languages : en
Pages : 386
Get Book Here
Book Description
Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thougtit that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 31 (thesis year 1986) a total of 11 ,480 theses titles trom 24 Canadian and 182 United States universities. We are sure that this broader base tor these titles reported will greatly enhance the value ot this important annual reterence work. While Volume 31 reports theses submitted in 1986, on occasion, certain univer sities do re port theses submitted in previousyears but not reported at the time.
Author:
Publisher:
ISBN:
Category : Nuclear energy
Languages : en
Pages : 612
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1460
Get Book Here
Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author: Richard D. Pashley
Publisher:
ISBN:
Category : Doped semiconductors
Languages : en
Pages : 114
Get Book Here
Book Description
Author: C. L. Anderson
Publisher:
ISBN:
Category :
Languages : en
Pages : 140
Get Book Here
Book Description
Controlled atmosphere techniques were developed as an alternative to dielectric encapsulation for the high temperature anneal of ion implanted layers in GaAs. Two approaches: (1) the controlled atmosphere technique (CAT), and (2) the melt controlled ambient technique (MCAT) have been investigated. Using the CAT procedure, which involves annealing in flowing hydrogen with an arsenic overpressure, annealing without detectable surface erosion, has been performed at temperatures as high as 950 C, with or without encapsulants. Impurity diffusion, damage recovery, and electrical activity were investigated as a function of anneal parameters. Range studies of technologically important impurities such as S, Si, Se, Be and Mg were carried out. For the first time the role of the encapsulant on implanted profile degradation and the importance of Cr redistribution during the anneal cycle were determined. An improved CAT anneal system capable of production quantity throughput was developed and is in current use for device processing. (Author).
Author: Jerry MacPherson Woodall
Publisher:
ISBN:
Category : Field-effect transistors
Languages : en
Pages : 280
Get Book Here
Book Description
