Integration of Resistive Switching Devices in Crossbar Structures PDF Download
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Author: Christian Nauenheim
Publisher: Forschungszentrum Jülich
ISBN: 3893366369
Category :
Languages : en
Pages : 159
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Book Description
Author: Christian Nauenheim
Publisher: Forschungszentrum Jülich
ISBN: 3893366369
Category :
Languages : en
Pages : 159
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Book Description
Author: Daniele Ielmini
Publisher:
ISBN: 9783527680870
Category : TECHNOLOGY & ENGINEERING
Languages : en
Pages : 755
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Book Description
With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.
Author: Qing Luo
Publisher: CRC Press
ISBN: 1000888401
Category : Technology & Engineering
Languages : en
Pages : 107
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Book Description
This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts: 1: Associative Problems in Crossbar array and 3D architectures; 2: Selector Devices and Self-Selective Cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM beyond Storage. The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general.
Author: Lin Yang
Publisher: Forschungszentrum Jülich
ISBN: 3893367071
Category :
Languages : en
Pages : 141
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Book Description
Author: Leon Chua
Publisher: Springer Nature
ISBN: 331976375X
Category : Computers
Languages : en
Pages : 1357
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Book Description
This Handbook presents all aspects of memristor networks in an easy to read and tutorial style. Including many colour illustrations, it covers the foundations of memristor theory and applications, the technology of memristive devices, revised models of the Hodgkin-Huxley Equations and ion channels, neuromorphic architectures, and analyses of the dynamic behaviour of memristive networks. It also shows how to realise computing devices, non-von Neumann architectures and provides future building blocks for deep learning hardware. With contributions from leaders in computer science, mathematics, electronics, physics, material science and engineering, the book offers an indispensable source of information and an inspiring reference text for future generations of computer scientists, mathematicians, physicists, material scientists and engineers working in this dynamic field.
Author: Ronald Tetzlaff
Publisher: Springer Science & Business Media
ISBN: 1461490685
Category : Technology & Engineering
Languages : en
Pages : 409
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Book Description
This book provides a comprehensive overview of current research on memristors, memcapacitors and, meminductors. In addition to an historical overview of the research in this area, coverage includes the theory behind memristive circuits, as well as memcapacitance, and meminductance. Details are shown for recent applications of memristors for resistive random access memories, neuromorphic systems and hybrid CMOS/memristor circuits. Methods for the simulation of memristors are demonstrated and an introduction to neuromorphic modeling is provided.
Author: Christoph Johannes Urban
Publisher: Forschungszentrum Jülich
ISBN: 389336644X
Category :
Languages : en
Pages : 169
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Book Description
Author: Marcel Manheller
Publisher: Forschungszentrum Jülich
ISBN: 3893368108
Category :
Languages : en
Pages : 215
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Book Description
Zsfassung in dt. u. engl. Sprache
Author: Clifton G. Fonstad
Publisher: McGraw-Hill Companies
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 712
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Book Description
Combining solid state devices with electronic circuits for an introductory-level microelectronics course, this textbook offers an integrated approach so that students can truly understand how a circuit works. A concise writing style is employed, with the right level of detail and physics to help students understand how a device works. Other features include an emphasis on modelling of electronic devices, and analysis of non-linear circuits. Spice problems, worked examples and end-of-chapter problems are included.
Author: Manuel Vázquez
Publisher: Woodhead Publishing
ISBN: 0081001819
Category : Technology & Engineering
Languages : en
Pages : 847
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Book Description
Magnetic nanowires and microwires are key tools in the development ofenhanced devices for information technology (memory and data processing) andsensing. Offering the combined characteristics of high density, high speed, andnon-volatility, they facilitate reliable control of the motion of magnetic domainwalls; a key requirement for the development of novel classes of logic and storagedevices. Part One introduces the design and synthesis of magnetic nanowires andmicrowires, reviewing the growth and processing of nanowires and nanowireheterostructures using such methods as sol-gel and electrodepositioncombinations, focused-electron/ion-beam-induced deposition, chemicalvapour transport, quenching and drawing and magnetic interactions. Magneticand transport properties, alongside domain walls, in nano- and microwiresare then explored in Part Two, before Part Three goes on to explore a widerange of applications for magnetic nano- and microwire devices, includingmemory, microwave and electrochemical applications, in addition to thermalspin polarization and configuration, magnetocalorific effects and Bloch pointdynamics. - Detailed coverage of multiple key techniques for the growth and processing of nanowires and microwires - Reviews the principles and difficulties involved in applying magnetic nano- and microwires to a wide range of applications - Combines the expertise of specialists from around the globe to give a broad overview of current and future trends
