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Author: Shi Yin
Publisher:
ISBN:
Category :
Languages : en
Pages : 194
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Book Description
Recently, piezoelectric materials, like lead titanate zirconate Pb(ZrxTi1-x)O3 (PZT), zinc oxide ZnO, and the solid solution Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), increasingly receive intensive studies because of their innovative applications in the microelectromechanical systems (MEMS). In order to integrate them on silicon substrate, several preliminaries must be taken into considerations, e.g. buffer layer, bottom electrode. In this thesis, piezoelectric films (PZT and PMN-PT) have been successfully epitaxially grown on silicon and SOI (silicon-on-insulator) in the form of single crystal by sol-gel process. In fact, recent studies show that single crystalline films seem to possess the superior properties than that of polycrystalline films, leading to an increase of the performance of MEMS devices. The first objective of this thesis was to realize the epitaxial growth of single crystalline film of piezoelectric materials on silicon. The use of a buffer layer of gadolinium oxide(Gd2O3) or strontium titanate (SrTiO3 or STO) deposited by molecular beam epitaxy (MBE) has been studied in detail to integrate epitaxial PZT and PMN-PT films on silicon. For Gd2O3/Si(111) system, the study of X-ray diffraction (XRD) on the growth of PZT film shows that the film is polycrystalline with coexistence of the nonferroelectric parasite phase, i.e. pyrochlore phase. On the other hand, the PZT film deposited on STO/Si(001) substrate is successfully epitaxially grown in the form of single crystalline film. In order to measure the electrical properties, a layer of strontium ruthenate (SrRuO3 or SRO) deposited by pulsed laser deposition (PLD) has been employed for bottom electrode due to its excellent conductivity and perovskite crystalline structure similar to that of PZT. The electrical characterization on Ru/PZT/SRO capacitors demonstrates good ferroelectric properties with the presence of hysteresis loop. Besides, the relaxor ferroelectric PMN-PT has been also epitaxially grown on STO/Si and confirmed by XRD and transmission electrical microscopy (TEM). This single crystalline film has the perovskite phase without the appearance of pyrochlore. Moreover, the study of infrared transmission using synchrotron radiation has proven a diffused phase transition over a large range of temperature, indicating a typical relaxor ferroelectric material. The other interesting in the single crystalline PZT films deposited on silicon and SOI is to employ them in the application of MEMS devices, where the standard silicon techniques are used. The microfabrication process performed in the cleanroom has permitted to realize cantilevers and membranes in order to mechanically characterize the piezoelectric layers. Mechanical deflection under the application of an electric voltage could be detected by interferometry. Eventually, this characterization by interferometry has been studied using the modeling based on finite element method and analytic method. In the future, it will be necessary to optimize the microfabrication process of MEMS devices based on single crystalline piezoelectric films in order to ameliorate the electromechanical performance. Finally, the characterizations at MEMS device level must be developed for their utilization in the future applications.
Author: Shi Yin
Publisher:
ISBN:
Category :
Languages : en
Pages : 194
Get Book Here
Book Description
Recently, piezoelectric materials, like lead titanate zirconate Pb(ZrxTi1-x)O3 (PZT), zinc oxide ZnO, and the solid solution Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), increasingly receive intensive studies because of their innovative applications in the microelectromechanical systems (MEMS). In order to integrate them on silicon substrate, several preliminaries must be taken into considerations, e.g. buffer layer, bottom electrode. In this thesis, piezoelectric films (PZT and PMN-PT) have been successfully epitaxially grown on silicon and SOI (silicon-on-insulator) in the form of single crystal by sol-gel process. In fact, recent studies show that single crystalline films seem to possess the superior properties than that of polycrystalline films, leading to an increase of the performance of MEMS devices. The first objective of this thesis was to realize the epitaxial growth of single crystalline film of piezoelectric materials on silicon. The use of a buffer layer of gadolinium oxide(Gd2O3) or strontium titanate (SrTiO3 or STO) deposited by molecular beam epitaxy (MBE) has been studied in detail to integrate epitaxial PZT and PMN-PT films on silicon. For Gd2O3/Si(111) system, the study of X-ray diffraction (XRD) on the growth of PZT film shows that the film is polycrystalline with coexistence of the nonferroelectric parasite phase, i.e. pyrochlore phase. On the other hand, the PZT film deposited on STO/Si(001) substrate is successfully epitaxially grown in the form of single crystalline film. In order to measure the electrical properties, a layer of strontium ruthenate (SrRuO3 or SRO) deposited by pulsed laser deposition (PLD) has been employed for bottom electrode due to its excellent conductivity and perovskite crystalline structure similar to that of PZT. The electrical characterization on Ru/PZT/SRO capacitors demonstrates good ferroelectric properties with the presence of hysteresis loop. Besides, the relaxor ferroelectric PMN-PT has been also epitaxially grown on STO/Si and confirmed by XRD and transmission electrical microscopy (TEM). This single crystalline film has the perovskite phase without the appearance of pyrochlore. Moreover, the study of infrared transmission using synchrotron radiation has proven a diffused phase transition over a large range of temperature, indicating a typical relaxor ferroelectric material. The other interesting in the single crystalline PZT films deposited on silicon and SOI is to employ them in the application of MEMS devices, where the standard silicon techniques are used. The microfabrication process performed in the cleanroom has permitted to realize cantilevers and membranes in order to mechanically characterize the piezoelectric layers. Mechanical deflection under the application of an electric voltage could be detected by interferometry. Eventually, this characterization by interferometry has been studied using the modeling based on finite element method and analytic method. In the future, it will be necessary to optimize the microfabrication process of MEMS devices based on single crystalline piezoelectric films in order to ameliorate the electromechanical performance. Finally, the characterizations at MEMS device level must be developed for their utilization in the future applications.
Author: Emmanuel Defaÿ
Publisher: John Wiley & Sons
ISBN: 111861660X
Category : Technology & Engineering
Languages : en
Pages : 329
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Book Description
This book contains four parts. The first one is dedicated to concepts. It starts with the definitions and examples of what is piezo-pyro and ferroelectricity by considering the symmetry of the material. Thereafter, these properties are described within the framework of Thermodynamics. The second part described the way to integrate these materials in Microsystems. The third part is dedicated to characterization: composition, structure and a special focused on electrical behaviors. The last part gives a survey of state of the art applications using integrated piezo or/and ferroelectric films.
Author: Dong Min Kim
Publisher:
ISBN:
Category :
Languages : en
Pages : 126
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Book Description
Author: John D. Cressler
Publisher: CRC Press
ISBN: 1420066862
Category : Technology & Engineering
Languages : en
Pages : 264
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Book Description
What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Author: Ashutosh Tiwari
Publisher: John Wiley & Sons
ISBN: 1119242738
Category : Technology & Engineering
Languages : en
Pages : 448
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Book Description
Ceramic materials are inorganic and non-metallic porcelains, tiles, enamels, cements, glasses and refractory bricks. Today, "ceramics" has gained a wider meaning as a new generation of materials influence on our lives; electronics, computers, communications, aerospace and other industries rely on a number of their uses. In general, advanced ceramic materials include electro-ceramics, optoelectronic-ceramics, superconductive ceramics and the more recent development of piezoelectric and dielectric ceramics. They can be considered for their features including mechanical properties, decorative textures, environmental uses, energy applications, as well as their usage in bio-ceramics, composites, functionally graded materials, intelligent ceramics and so on. Advanced Ceramic Materials brings together a group of subject matter experts who describe innovative methodologies and strategies adopted in the research and development of the advanced ceramic materials. The book is written for readers from diverse backgrounds across chemistry, physics, materials science and engineering, medical science, pharmacy, environmental technology, biotechnology, and biomedical engineering. It offers a comprehensive view of cutting-edge research on ceramic materials and technologies. Divided into 3 parts concerning design, composites and functionality, the topics discussed include: Chemical strategies of epitaxial oxide ceramics nanomaterials Biphasic, triphasic and multiphasic calcium orthophosphates Microwave assisted processing of advanced ceramic composites Continuous fiber reinforced ceramic matrix composites Yytria and magnesia doped alumina ceramic Oxidation induced crack healing SWCNTs vs MWCNTs reinforcement agents Organic and inorganic wastes in clay brick production Functional tantalum oxides Application of silver tin research on hydroxyapatite
Author: Emmanuel Defaÿ
Publisher: John Wiley & Sons
ISBN: 1118602803
Category : Technology & Engineering
Languages : en
Pages : 347
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Book Description
This book describes up-to-date technology applied to high-K materials for More Than Moore applications, i.e. microsystems applied to microelectronics core technologies. After detailing the basic thermodynamic theory applied to high-K dielectrics thin films including extrinsic effects, this book emphasizes the specificity of thin films. Deposition and patterning technologies are then presented. A whole chapter is dedicated to the major role played in the field by X-Ray Diffraction characterization, and other characterization techniques are also described such as Radio frequency characterization. An in-depth study of the influence of leakage currents is performed together with reliability discussion. Three applicative chapters cover integrated capacitors, variables capacitors and ferroelectric memories. The final chapter deals with a reasonably new research field, multiferroic thin films.
Author: Walter Heywang
Publisher: Springer Science & Business Media
ISBN: 3540686835
Category : Science
Languages : en
Pages : 576
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Book Description
Discovered in 1880, piezoelectric materials play a key role in an innovative market of several billions of dollars. Recent advances in applications derive from new materials and their development, as well as to new market requirements. With the exception of quartz, ferroelectric materials are used for they offer both high efficiency and sufficient versatility to meet adequately the multidimensional requirements for application. Consequently, strong emphasis is placed on tailoring materials and technology, whether one deals with single crystals, ceramics or plastic materials. Tailoring requires a basic understanding of both physical principles and technical possibilities and limitations. This report elucidates these developments by a broad spectrum of examples, comprising ultrasound in medicine and defence industry, frequency control, signal processing by SAW-devices, sensors, actuators, including novel valves for modern motor management. It delivers a mutual fertilization of technology push and market pull that should be of interest not only to materials scientists or engineers but also to managers who dedicate themselves to a sound future-oriented R&D policy.
Author: Jun Ouyang
Publisher: OAE Publishing Inc.
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 10
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Book Description
Ferroelectric (FE) ceramics with a large relative dielectric permittivity and a high dielectric strength have the potential to store or supply electricity of very high energy and power densities, which is desirable in many modern electronic and electrical systems. For a given FE material, such as the commonly-used BaTiO3, a close interplay between defect chemistry, misfit strain, and grain characteristics must be carefully manipulated for engineering its film capacitors. In this work, the effects of grain orientation and morphology on the energy storage properties of BaTiO3 thick films were systematically investigated. These films were all deposited on Si at 500 °C in an oxygen-rich atmosphere, and their thicknesses varied between ~500 nm and ~2.6 μm. While a columnar nanograined BaTiO3 film with a (001) texture showed a higher recyclable energy density Wrec (81.0 J/cm3vs. 57.1 J/
[email protected] MV/cm, ~40% increase) than that of a randomly-oriented BaTiO3 film of about the same thickness (~500 nm), the latter showed an improved energy density at a reduced electric field with an increasing film thickness. Specifically, for the 1.3 μm and 2.6 μm thick polycrystalline films, their energy storage densities Wrec reached 46.6 J/cm3 and 48.8 J/cm3 at an applied electric field of 2.31 MV/cm (300 V on 1.3 μm film) and 1.77 MV/cm (460 V on 2.6 μm film), respectively. This ramp-up in energy density can be attributed to increased polarizability with a growing grain size in thicker polycrystalline films and is desirable in high pulse power applications.
Author: B Baliga
Publisher: Elsevier
ISBN: 0323155456
Category : Technology & Engineering
Languages : en
Pages : 337
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Book Description
Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.
Author: Alexander A. Demkov
Publisher: Springer Science & Business Media
ISBN: 146149320X
Category : Technology & Engineering
Languages : en
Pages : 284
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Book Description
This book describes the basic physical principles of the oxide/semiconductor epitaxy and offers a view of the current state of the field. It shows how this technology enables large-scale integration of oxide electronic and photonic devices and describes possible hybrid semiconductor/oxide systems. The book incorporates both theoretical and experimental advances to explore the heteroepitaxy of tuned functional oxides and semiconductors to identify material, device and characterization challenges and to present the incredible potential in the realization of multifunctional devices and monolithic integration of materials and devices. Intended for a multidisciplined audience, Integration of Functional Oxides with Semiconductors describes processing techniques that enable atomic-level control of stoichiometry and structure and reviews characterization techniques for films, interfaces and device performance parameters. Fundamental challenges involved in joining covalent and ionic systems, chemical interactions at interfaces, multi-element materials that are sensitive to atomic-level compositional and structural changes are discussed in the context of the latest literature. Magnetic, ferroelectric and piezoelectric materials and the coupling between them will also be discussed. GaN, SiC, Si, GaAs and Ge semiconductors are covered within the context of optimizing next-generation device performance for monolithic device processing.
