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Author: Carlos Pazde-Araujo
Publisher: CRC Press
ISBN: 9789056997045
Category : Technology & Engineering
Languages : en
Pages : 764
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Book Description
The aim of this book is to present in one volume some of the most significant developments that have taken place in the field of integrated ferroelectrics during the last decade of the twentieth century. The book begins with a comprehensive introduction to integrated ferroelectrics and follows with fifty-three papers selected by Carlos Paz de Araujo, Orlando Auciello, Ramamoorthy Ramesh, and George W. Taylor. These fifty-three papers were selected from more than one thousand papers published over the last eleven years in the proceedings of the International Symposia on Integrated Ferroelectrics (ISIF). These papers were chosen on the basis that they (a) give a broad view of the advances that have been made and (b) indicate the future direction of research and technological development. Readers who wish for a more in-depth treatment of the subject are encouraged to refer to volumes 1 to 27 of Integrated Ferroelectrics, the main publication vehicle for papers in this field.
Author: Carlos Pazde-Araujo
Publisher: CRC Press
ISBN: 9789056997045
Category : Technology & Engineering
Languages : en
Pages : 764
Get Book Here
Book Description
The aim of this book is to present in one volume some of the most significant developments that have taken place in the field of integrated ferroelectrics during the last decade of the twentieth century. The book begins with a comprehensive introduction to integrated ferroelectrics and follows with fifty-three papers selected by Carlos Paz de Araujo, Orlando Auciello, Ramamoorthy Ramesh, and George W. Taylor. These fifty-three papers were selected from more than one thousand papers published over the last eleven years in the proceedings of the International Symposia on Integrated Ferroelectrics (ISIF). These papers were chosen on the basis that they (a) give a broad view of the advances that have been made and (b) indicate the future direction of research and technological development. Readers who wish for a more in-depth treatment of the subject are encouraged to refer to volumes 1 to 27 of Integrated Ferroelectrics, the main publication vehicle for papers in this field.
Author: Emmanuel Defaÿ
Publisher: John Wiley & Sons
ISBN: 1118602803
Category : Technology & Engineering
Languages : en
Pages : 347
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Book Description
This book describes up-to-date technology applied to high-K materials for More Than Moore applications, i.e. microsystems applied to microelectronics core technologies. After detailing the basic thermodynamic theory applied to high-K dielectrics thin films including extrinsic effects, this book emphasizes the specificity of thin films. Deposition and patterning technologies are then presented. A whole chapter is dedicated to the major role played in the field by X-Ray Diffraction characterization, and other characterization techniques are also described such as Radio frequency characterization. An in-depth study of the influence of leakage currents is performed together with reliability discussion. Three applicative chapters cover integrated capacitors, variables capacitors and ferroelectric memories. The final chapter deals with a reasonably new research field, multiferroic thin films.
Author:
Publisher:
ISBN:
Category : Ferroelectric devices
Languages : en
Pages : 704
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Book Description
Author: Seungbum Hong
Publisher: Springer
ISBN: 1489975373
Category : Technology & Engineering
Languages : en
Pages : 280
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Book Description
This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.
Author: Carlos Paz de Araujo
Publisher: Taylor & Francis US
ISBN: 9782884491976
Category : Science
Languages : en
Pages : 598
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Book Description
The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.
Author: International Symposium on Integrated Ferroelectrics
Publisher:
ISBN:
Category :
Languages : en
Pages : 12
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Book Description
Author: Yin Zhiwen
Publisher: Taylor & Francis
ISBN: 9782881244292
Category : Science
Languages : en
Pages : 340
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Book Description
Author: Seungbum Hong
Publisher: Springer Science & Business Media
ISBN: 1441990445
Category : Technology & Engineering
Languages : en
Pages : 294
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Book Description
This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e. electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials. Well known le'adingexperts both in relevant academia and industry over the world (U.S., Japan, Germany, Switzerland, Korea) were invited to contribute to each chapter. The first part under the title of electrical characterization in nanoscale ferroelectric capacitors starts with Chapter 1, "Testing and characterization of ferroelectric thin film capacitors," written by Dr. I. K. Yoo. The author provides a comprehensive review on basic concepts and terminologies of ferroelectric properties and their testing methods. This chapter also covers reliability issues in FeRAMs that are crucial for commercialization of high density memory products. In Chapter 2, "Size effects in ferroelectric film capacitors: role ofthe film thickness and capacitor size," Dr. I. Stolichnov discusses the size effects both in in-plane and out-of-plane dimensions of the ferroelectric thin film. The author successfully relates the electric performance and domain dynamics with proposed models of charge injection and stress induced phase transition. The author's findings present both a challenging problem and the clue to its solution of reliably predicting the switching properties for ultra-thin ferroelectric capacitors. In Chapter 3, "Ferroelectric thin films for memory applications: nanoscale characterization by scanning force microscopy," Prof. A.
Author: Sreeramamurthy Ankem
Publisher: John Wiley & Sons
ISBN: 1118788508
Category : Technology & Engineering
Languages : en
Pages : 397
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Book Description
The International Symposium was organized to capture the state of our knowledge on the science and technology of interfaces. The Symposium (in honor of Dr. B. B. Rath) was held during the TMS Annual meeting, Feb 17-21, 2002 at Seattle WA. This volume captures the salient papers presented at the symposium. The symposium was sponsored by the Structural Materials Division and the Electronic, Magnetic & Photonic Materials Division of TMS and the Materials Science Critical Technology Sector of ASM International and in particular by the following committees: the Physical Metallurgy Committee (TMS), the Superconducting Materials Committee (TMS), the Titanium Committee (TMD) and the Mechanical Behavior of Materials Committee (TMS/ASM). The objective of this symposium was to present current research on advanced interface controlled materials with primary focus on advanced materials. Special attention was given to design of such interface controlled materials with their unique and highly desirable properties. The symposium was designed to assess the current status and to identify future directions of research, design and applications of the role of interfaces in nanostructured bulk solids, films and coatings as well as polycrystalline superconducting materials. Particular emphasis was placed on developing close interactions and fostering future collaborations among scientists and engineers from the USA, Western and Eastern Europe, Russia, and other Asian countries.
Author: Mickaël Lallart
Publisher: BoD – Books on Demand
ISBN: 9533073322
Category : Science
Languages : en
Pages : 534
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Book Description
Ferroelectric materials have been and still are widely used in many applications, that have moved from sonar towards breakthrough technologies such as memories or optical devices. This book is a part of a four volume collection (covering material aspects, physical effects, characterization and modeling, and applications) and focuses on ways to obtain high-quality materials exhibiting large ferroelectric activity. The book covers the aspect of material synthesis and growth, doping and composites, lead-free devices, and thin film synthesis. The aim of this book is to provide an up-to-date review of recent scientific findings and recent advances in the field of ferroelectric materials, allowing a deep understanding of the material aspects of ferroelectricity.
