Injection Locking a Broad Area Diode Laser

Injection Locking a Broad Area Diode Laser PDF Author: William D. Lutmer
Publisher:
ISBN:
Category :
Languages : en
Pages : 42

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Injection Locking a Broad Area Diode Laser

Injection Locking a Broad Area Diode Laser PDF Author: William D. Lutmer
Publisher:
ISBN:
Category :
Languages : en
Pages : 42

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Laser injection locking of lithium diodes. An experimental approach with a 660 nm thorlabs diode and a 675 nm Ushio laser diode

Laser injection locking of lithium diodes. An experimental approach with a 660 nm thorlabs diode and a 675 nm Ushio laser diode PDF Author:
Publisher: GRIN Verlag
ISBN: 3346581845
Category : Science
Languages : en
Pages : 43

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Bachelor Thesis from the year 2021 in the subject Physics - Applied physics, grade: 1,0, University of Tubingen, language: English, abstract: The goal of this work is to find a stable injection lock setup with over 100 mW of output power. There are two diodes characterized for this aim while injection locking them. One is available at Thorlabs with a center wavelength of 660 nm and up to 120 mW of output power in the free-running state. The other diode manufactured by Ushio is not yet readily available on the market but has a center wavelength of 675 nm with up to 0,25 W of output power and can be directly operated at 671 nm by lowering the temperature. There are concerns that this temperature would be below the dew point, especially in summer. This causes condensation on the diode from the water vapor in the air, explaining why this diode is tested only via the second approach. In Section 2 a short introduction into semiconductor laser physics is explaining the working principle of laser diodes. Additionally, the injection locking theory and the Gaussian beam model are discussed. The experimental setup and instrument control are described in Section 3. This is followed by the characterization of the Thorlabs diode with a center wavelength of 660 nm in Section 4 and the Ushio diode with a center wavelength of 675 nm at appropriate temperatures in Section 5. An outlook on further improving the setup by actively stabilizing the injection lock is given in Section 6. In cold atom experiments for laser cooling and trapping of atoms, laser powers of more than 100 mW are often required. Furthermore, magneto-optical traps, while loading, are in need of sufficient power to reduce the number of atoms lost on the way. The output power of an external cavity diode laser does not produce enough output power for such applications. Alternatively, tapered amplifiers are a way to produce sufficient output power. These are currently not available for the targeted laser cooling wavelength for lithium of 671nm. However, injection locking of free-running, high power diodes is an alternative to tapered amplifiers for delivering enough output power. This is a technique to produce higher output power at a stable frequency. To achieve this, a weak signal of typically a few mW of an external cavity diode "seed" laser is injected into a free-running "slave" diode, which is capable of higher output power.

DURIP-94: Phase Conjugate Injection Locking of Laser Diode Arrays

DURIP-94: Phase Conjugate Injection Locking of Laser Diode Arrays PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 5

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This is an 'equipment only' grant under the Defense University Research Instrumentation Program. A report of the results obtained with this equipment is contained in the final report for Grant F49620-95-1-0082, 'Phase-Conjugate Injection Locking of Laser Diode Arrays.' To avoid duplication of paperwork, only a partial summary of that report will be duplicated here. This grant is to produce high-brightness, narrow-frequency light beams from semiconductor laser arrays using optical phase conjugation. The investigators recently demonstrated that their proposed techniques are both practical and efficient, and can be applied to commercially available semiconductor lasers. Their experiments coupled an optical phase conjugator to a broad-area semiconductor laser, causing the laser to emit a 0.5 watt, near-diffraction-limited output beam. Their system is simple and compact, and it also automatically adjusts for any frequency drift or gradual misalignment of the optical components. The investigators extended their techniques from single, broad-area lasers to powerful semiconductor laser arrays.

High-Power Diode Lasers

High-Power Diode Lasers PDF Author: Roland Diehl
Publisher: Springer Science & Business Media
ISBN: 3540478523
Category : Science
Languages : en
Pages : 420

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Book Description
Starting from the basics of semiconductor lasers with emphasis on the generation of high optical output power the reader is introduced in a tutorial way to all key technologies required to fabricate high-power diode-laser sources. Various applications are exemplified.

Tailoring the Emission of Stripe-array Diode Lasers with External Cavities to Enable Nonlinear Frequency Conversion

Tailoring the Emission of Stripe-array Diode Lasers with External Cavities to Enable Nonlinear Frequency Conversion PDF Author: Andreas Jechow
Publisher: Universitätsverlag Potsdam
ISBN: 3869560312
Category : Science
Languages : en
Pages : 152

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Book Description
A huge number of applications require coherent radiation in the visible spectral range. Since diode lasers are very compact and efficient light sources, there exists a great interest to cover these applications with diode laser emission. Despite modern band gap engineering not all wavelengths can be accessed with diode laser radiation. Especially in the visible spectral range between 480 nm and 630 nm no emission from diode lasers is available, yet. Nonlinear frequency conversion of near-infrared radiation is a common way to generate coherent emission in the visible spectral range. However, radiation with extraordinary spatial temporal and spectral quality is required to pump frequency conversion. Broad area (BA) diode lasers are reliable high power light sources in the near-infrared spectral range. They belong to the most efficient coherent light sources with electro-optical efficiencies of more than 70%. Standard BA lasers are not suitable as pump lasers for frequency conversion because of their poor beam quality and spectral properties. For this purpose, tapered lasers and diode lasers with Bragg gratings are utilized. However, these new diode laser structures demand for additional manufacturing and assembling steps that makes their processing challenging and expensive. An alternative to BA diode lasers is the stripe-array architecture. The emitting area of a stripe-array diode laser is comparable to a BA device and the manufacturing of these arrays requires only one additional process step. Such a stripe-array consists of several narrow striped emitters realized with close proximity. Due to the overlap of the fields of neighboring emitters or the presence of leaky waves, a strong coupling between the emitters exists. As a consequence, the emission of such an array is characterized by a so called supermode. However, for the free running stripe-array mode competition between several supermodes occurs because of the lack of wavelength stabilization. This leads to power fluctuations, spectral instabilities and poor beam quality. Thus, it was necessary to study the emission properties of those stripe-arrays to find new concepts to realize an external synchronization of the emitters. The aim was to achieve stable longitudinal and transversal single mode operation with high output powers giving a brightness sufficient for efficient nonlinear frequency conversion. For this purpose a comprehensive analysis of the stripe-array devices was done here. The physical effects that are the origin of the emission characteristics were investigated theoretically and experimentally. In this context numerical models could be verified and extended. A good agreement between simulation and experiment was observed. One way to stabilize a specific supermode of an array is to operate it in an external cavity. Based on mathematical simulations and experimental work, it was possible to design novel external cavities to select a specific supermode and stabilize all emitters of the array at the same wavelength. This resulted in stable emission with 1 W output power, a narrow bandwidth in the range of 2 MHz and a very good beam quality with M²<1.5. This is a new level of brightness and brilliance compared to other BA and stripe-array diode laser systems. The emission from this external cavity diode laser (ECDL) satisfied the requirements for nonlinear frequency conversion. Furthermore, a huge improvement to existing concepts was made. In the next step newly available periodically poled crystals were used for second harmonic generation (SHG) in single pass setups. With the stripe-array ECDL as pump source, more than 140 mW of coherent radiation at 488 nm could be generated with a very high opto-optical conversion efficiency. The generated blue light had very good transversal and longitudinal properties and could be used to generate biphotons by parametric down-conversion. This was feasible because of the improvement made with the infrared stripe-array diode lasers due to the development of new physical concepts.

Development of Simplified External Control Techniques for Broad Area Semiconductor Lasers

Development of Simplified External Control Techniques for Broad Area Semiconductor Lasers PDF Author: National Aeronautics and Space Administration (NASA)
Publisher: Createspace Independent Publishing Platform
ISBN: 9781722353728
Category :
Languages : en
Pages : 78

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The goal of this project was to injection lock a 500 mW broad area laser diode (BAL) with a single mode low power laser diode with injection beam delivery through a single mode optical fiber (SMF). This task was completed successfully with the following significant accomplishments: (1) injection locking of a BAL through a single-mode fiber using a master oscillator and integrated miniature optics; (2) generation of a single-lobed, high-power far-field pattern from the injection-locked BAL that steers with drive current; and (3) a comprehensive theoretical analysis of a model that describes the observed behavior of the injection locked oscillator. Davis, Christopher C. Unspecified Center...

Precision Spectroscopy, Diode Lasers, and Optical Frequency Measur

Precision Spectroscopy, Diode Lasers, and Optical Frequency Measur PDF Author: Leo Hollberg
Publisher: DIANE Publishing
ISBN: 0788186140
Category :
Languages : en
Pages : 293

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Book Description
A selected set of reprints from the Optical Frequency Measurement Group of the Time and Frequency Div. of the Nat. Inst. of Standards and Technology and consists of work published between 1987 and 1997. The 2 programs represented are (1) development of tunable diode-laser technology for scientific applications and precision measurements, and (2) research toward the goal of realizing optical-frequency measurements and synthesis. The papers are organized in 5 categories: diode laser technology; tunable laser systems; laser spectroscopy; optical synthesis and extended wavelength coverage; and multi-photon interactions and optical coherence.

Semiconductor Lasers

Semiconductor Lasers PDF Author: Junji Ohtsubo
Publisher: Springer
ISBN: 3319561383
Category : Science
Languages : en
Pages : 679

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Book Description
This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in semiconductor lasers are discussed, but also for example the method of self-mixing interferometry in quantum-cascade lasers, which is indispensable in practical applications. Further, this edition covers chaos synchronization between two lasers and the application to secure optical communications. Another new topic is the consistency and synchronization property of many coupled semiconductor lasers in connection with the analogy of the dynamics between synaptic neurons and chaotic semiconductor lasers, which are compatible nonlinear dynamic elements. In particular, zero-lag synchronization between distant neurons plays a crucial role for information processing in the brain. Lastly, the book presents an application of the consistency and synchronization property in chaotic semiconductor lasers, namely a type of neuro-inspired information processing referred to as reservoir computing.

Monolithic Diode-Laser Arrays

Monolithic Diode-Laser Arrays PDF Author: Nils W. Carlson
Publisher: Springer Science & Business Media
ISBN: 3642789420
Category : Science
Languages : en
Pages : 405

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Book Description
Although semiconductor-diode lasers are the most compact, highest gain and most efficient laser sources, difficulties remain in developing structures that will produce high-quality, diffraction-limited output beams. Indeed, only a few designs have emerged with the potential for producing high-power, high-brightness monolithic sources. This book presents and analyzes the results of work performed over the past two decades in the development of such diode-laser arrays.

Optics Letters

Optics Letters PDF Author:
Publisher:
ISBN:
Category : Optics
Languages : en
Pages : 710

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