Infrared Spectroscopic Ellipsometry for Ion-Implanted Silicon Wafers PDF Download
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Author: Xianming Liu
Publisher:
ISBN: 9789533075877
Category :
Languages : en
Pages :
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Book Description
Author: Xianming Liu
Publisher:
ISBN: 9789533075877
Category :
Languages : en
Pages :
Get Book Here
Book Description
Author: Sukumar Basu
Publisher: BoD – Books on Demand
ISBN: 9533075872
Category : Science
Languages : en
Pages : 360
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Book Description
The exciting world of crystalline silicon is the source of the spectacular advancement of discrete electronic devices and solar cells. The exploitation of ever changing properties of crystalline silicon with dimensional transformation may indicate more innovative silicon based technologies in near future. For example, the discovery of nanocrystalline silicon has largely overcome the obstacles of using silicon as optoelectronic material. The further research and development is necessary to find out the treasures hidden within this material. The book presents different forms of silicon material, their preparation and properties. The modern techniques to study the surface and interface defect states, dislocations, and so on, in different crystalline forms have been highlighted in this book. This book presents basic and applied aspects of different crystalline forms of silicon in wide range of information from materials to devices.
Author:
Publisher: Academic Press
ISBN: 0080864430
Category : Technology & Engineering
Languages : en
Pages : 335
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Book Description
Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Provides basic knowledge of ion implantation-induced defects Focuses on physical mechanisms of defect annealing Utilizes electrical, physical, and optical characterization tools for processed semiconductors Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Author: Electrochemical Society. Meeting
Publisher: The Electrochemical Society
ISBN: 9781566773751
Category : Science
Languages : en
Pages : 538
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Book Description
Author: Arnulf Röseler
Publisher: VCH
ISBN:
Category : Ellipsometry
Languages : en
Pages : 168
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Book Description
Author: H. Münder
Publisher: Newnes
ISBN: 0444596348
Category : Science
Languages : en
Pages : 344
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Book Description
These proceedings represent the most recent progress in the field of porous silicon. Several papers present results in which the influence of the formation parameters on the structural and optical properties has been investigated. Further topics dealt with include: the influence of light during the formation process on the photoluminescence behaviour; fundamental mechanism of the photoluminescence; the electroluminescence of porous silicon; applications based on porous silicon; charge carrier transport.
Author: Y. Shiraki
Publisher: Elsevier
ISBN: 0444596895
Category : Science
Languages : en
Pages : 289
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Book Description
The preparation of silicon germanium microstructures, their physical, chemical and electrical characterization, and their device processing and application are reviewed in this book. Special emphasis is given to ultrathin Si/Ge superlattices. Topics covered include: Wafer preparation and epitaxial growth; surface effects driven phenomena, such as clustering, segregation, 'surfactants'; Analysis, both in situ and ex situ; Strain adjustment methods; High quality buffers; Modification of material properties by quantum wells and superlattices; Devices: Novel concepts, processing, modelling, demonstrators. The questions highlighted, particularly those articles comparing related or competing activities, will provide a wealth of knowledge for all those interested in the future avenues of theory and applications in this field.
Author: H. Ishida
Publisher: Springer Science & Business Media
ISBN: 1468477765
Category : Science
Languages : en
Pages : 447
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Book Description
This book contains the proceedings of the Symposium on FT-IR Characterization of Polymers, which was held under the auspices of the Division of Polymer Chemistry, American Chemical Society (ACS) during the annual ACS meeting in Philadelphia, August, 1984. The content of each paper has been substantially extended from the papers presented during the conference. Due to the accidental, irrecoverable loss of the entire contents of the book by the computer system used for editorial purposes, the publication of this book has been delayed more than one year over the initial scheduled date. It has been a continuous, frustrating experience for the editor as well as for the authors. An extended Murphy's law, -anything can go wrong goes multiply wrong- has been demonstrated in editor's office. It necessitated, otherwise unnecessary, repeated proof reading during which time the editor had valuable experience ~n familiarizing himself with each paper much more than usual. The papers in this book are state-of-the-art even after such a delay. It is the authors pride and integrity toward the quality of each paper that makes the value of this book long lasting, while responsibility of the loss of any timeliness rests at the editor's hand. For the purpose of official records, submission and acceptance dates must be stated. All papers had been submitted by September, 1984, and had been accepted for publication by November, 1984, after the critical review processes.
Author: P.L.F. Hemment
Publisher: Newnes
ISBN: 0444596313
Category : Technology & Engineering
Languages : en
Pages : 630
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Book Description
Containing the proceedings of three symposia in the E-MRS series this book is divided into two parts. Part one is concerned with ion beam processing, a particularly powerful and versatile technology which can be used both to synthesise and modify materials, including metals, semiconductors, ceramics and dielectrics, with great precision and excellent control. Furthermore it also deals with the correlated effects in atomic and cluster ion bombardment and implantation. Part two deals with the deposition techniques, characterization and applications of advanced ceramic, metallic and polymeric coatings or thin films for surface protection against corrosion, erosion, abrasion, diffusion and for lubrication of contracting surfaces in relative motion.
Author: Janusz Bogdanowicz
Publisher: Springer Science & Business Media
ISBN: 3642301088
Category : Technology & Engineering
Languages : en
Pages : 217
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Book Description
One of the critical issues in semiconductor technology is the precise electrical characterization of ultra-shallow junctions. Among the plethora of measurement techniques, the optical reflectance approach developed in this work is the sole concept that does not require physical contact, making it suitable for non-invasive in-line metrology. This work develops extensively all the fundamental physical models of the photomodulated optical reflectance technique and introduces novel approaches that extend its applicability from dose monitoring towards detailed carrier profile reconstruction. It represents a significant breakthrough in junction metrology with potential for industrial implementation.
