Author: Jianming Zhou
Publisher:
ISBN:
Category : Diodes, Schottky-barrier
Languages : en
Pages : 152
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"As a transparent conductive material, indium tin oxide (ITO) has been utilized as electrodes in liquid crystal displays, solar cells, heat reflecting films and gas sensors. In general, the desired properties are high conductance and transmission. However, due to the complexity of ITO, the film properties strongly depend on the deposition processes. In this study, the deposition conditions for ITO film were optimized to get both high conductivity and transmission. The emphasis was on investigating the effects of various deposition parameters, such as oxygen partial pressure, total gas flow, annealing conditions and power. These are the most critical parameters for ITO deposition. A mathematical model to describe the material properties as functions of these parameters for a CVC model 601 Sputterer was developed utilizing JMP IN software. Films with resistivity 3x10-4[omega]-cm and transmittance above 90% were achieved on glass and silicon substrates with 20 hours of annealing. The processing window (power: 120-150W, oxygen ratio: 6-10%) is, to the author's knowledge, the largest reported by literature. However, the ITO film properties (electrical and optical) variation between runs needs to be further reduced. Patterning of ITO was also investigated. High but controllable etch rates are desired. Both wet and dry etch processes were developed. The etch rate of 48nm/min was achieved by using HCL aqueous solution (4:1 HCl to DI water volumetric ratio, where HCl is the standard 37% HCl solution) with almost infinite selectivity between the ITO film and the photoresisit. For dry etch, the etch rate is 1nm/min with just argon as the working gas and the etching selectivity between the photoresist and the ITO film is 13.02. To etch 100nm ITO film, the photoresist needs to be at least 1.5um to serve as etching mask. This dry etch process still needs to be improved. A Schottky contact was successfully fabricated by using ITO as the metal. The electrical barrier height was calculated to be 1.01eV. The current-voltage characteristics were investigated as well"--Abstract.
Author: Tin Maung Tun
Publisher:
ISBN:
Category :
Languages : en
Pages : 152
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Author: Rongxin Wang
Publisher: Open Dissertation Press
ISBN: 9781361207796
Category :
Languages : en
Pages :
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This dissertation, "Preparation and Post-annealing Effects on the Optical Properties of Indium Tin Oxide Thin Films" by Rongxin, Wang, 王榮新, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled PREPARATION AND POST-ANNEALING EFFECTS ON THE OPTICAL PROPERTIES OF INDIUM TIN OXIDE THIN FILMS Submitted by WANG Rong Xin for the degree of Doctor of Philosophy at The University of Hong Kong in April 2005 Many opto-electronic devices, such as III-V compound devices, liquid crystal displays, solar cells, organic and inorganic light emitting devices, and ultraviolet photodetectors, demand transparent electrode materials simultaneously having high electrical conductance. To meet the requirements for particular applications, a great deal of basic research and studies have been carried out on the electrical and optical properties of these materials. As a most promising candidate for such materials, indium tin oxide (ITO) has attracted interest in recent years. Furthermore, ITO has many unique properties such as excellent adhesion on the substrate, thermal stability and ease of patterning. The deposition of high-quality ITO thin films is a key step for successful application of ITO thin films as transparent electrode materials. To obtain optimal electrical and optical properties of ITO films, the growth parameters and conditions must be determined. Moreover, the optical and electrical properties of ITO contact layers, which can either be on the top side or the bottom side of a device, are influenced by various post-deposition treatments. For the present work, ITO thin films were deposited on glass and quartz substrates using e-beam evaporation with different deposition rates. The influence of substrate material, deposition rate, deposition gas environment and post-deposition annealing on the optical properties of the films was investigated in detail. Atomic force microscopy, X-ray diffraction and X-ray photoemission spectroscopy was employed to obtain information on the chemical state and crystallization of the films. Analysis of these data suggests that the substrate material, deposition rate, deposition gas environment and post-deposition annealing conditions strongly affect the chemical composition and the microstructure of the ITO films and these in turn influence the optical properties of the film. Oxygen incorporation transfers the In O phase to the In O phase and removes metallic In to form both indium oxide 2 3-x 2 3 phases. Both of these reactions are beneficial for the optical transmittance of ITO thin films. Moreover, it was found that the incorporation and decomposition reactions of oxygen can be controlled so as to change the optical properties of the ITO thin films reversibly. DOI: 10.5353/th_b3154617 Subjects: Thin films - Optical properties Indium compounds Annealing of metals
Author: Oleksandr Malik
Publisher:
ISBN:
Category : Technology
Languages : en
Pages :
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High-quality indium tin oxide (ITO) films have been fabricated using a DC sputtering technique in a pure argon atmosphere with a postannealing in an oxygen environment at atmosphere pressure. Structural, morphological, and electro-optical parameters of the ITO films were studied at different annealing temperatures for the films fabricated on two types of glass substrates, soda lime and alkali-free substrates. A comparative analysis shows that low-cost soda lime substrates are suitable for the fabrication of high-quality nanocrystalline ITO films after annealing them at 300°C. This result is of great importance for reducing the cost of thin film solar cells, in which ITO films serve as transparent conducting electrodes. We present a comparison of the properties of sputtered ITO films with those fabricated using a spray pyrolysis deposition technique, which is useful for some optoelectronic applications.
Author:
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ISBN:
Category :
Languages : en
Pages :
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Author: Dania Awni Alsaid
Publisher:
ISBN:
Category :
Languages : en
Pages : 117
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The advancements in the field of solution processable electro-active materials and their ability to be printed om different substrates have led to the evolution of printed electronics. In this field, electronic components are manufactured with conventional printing methods. Transparent electrodes made from indium tin oxide (ITO) are part of many electronic devices. Currently in industry, highly conductive films are prepared by sputtering. The sputtering and then patterning of indium tin oxide films is a sophisticated process that consumes high energy, generates waste and produces films with limited flexibility. Therefore, there is a need to investigate processing methods for creating ITO films other than sputtering. Gravure printing is an excellent option for printing the ITO nanoparticles. However, very little research has been done to study the gravure printing process for producing ITO films or the properties of the films after printing and sintering.
Author: Priyank Sukul
Publisher:
ISBN:
Category : Biomedical materials
Languages : en
Pages : 152
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Author: H. B. Saim
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author:
Publisher:
ISBN:
Category : Optical communications
Languages : en
Pages : 852
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Author: Alireza Salehi
Publisher:
ISBN:
Category :
Languages : en
Pages :
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