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Author: Taewoong Kim
Publisher:
ISBN:
Category :
Languages : en
Pages :
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ABSTRACT: InN and In-rich compositions of In[subscript x]Ga[subscript 1-x]N, have potential for a variety of device applications including solar cells. This work addresses the growth of high quality InN by metalorganic vapor phase epitaxy. To better understand the material a thermodynamic assessment of the In-N-C-H system was performed to yield the In-N P-T diagram. In addition, the InN critical thickness was calculated for several candidate substrates to guide substrate selection. Furthermore, computational fluid dynamics was used to design an improved reactor. A vertical NH3 tube design produced the lowest reported [omega]-2[theta] rocking curve FWHM value of (574 arcsec) for InN grown on GaN/Al2O3 (0001). The film surface was also mirror-like as judged by AFM (RMS roughness = 4.2 nm). The PL peak energy of 0.82 eV was obtained for InN grown on Si, consistent with recent reports of a considerably lower of bandgap energy.
Author: Taewoong Kim
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
ABSTRACT: InN and In-rich compositions of In[subscript x]Ga[subscript 1-x]N, have potential for a variety of device applications including solar cells. This work addresses the growth of high quality InN by metalorganic vapor phase epitaxy. To better understand the material a thermodynamic assessment of the In-N-C-H system was performed to yield the In-N P-T diagram. In addition, the InN critical thickness was calculated for several candidate substrates to guide substrate selection. Furthermore, computational fluid dynamics was used to design an improved reactor. A vertical NH3 tube design produced the lowest reported [omega]-2[theta] rocking curve FWHM value of (574 arcsec) for InN grown on GaN/Al2O3 (0001). The film surface was also mirror-like as judged by AFM (RMS roughness = 4.2 nm). The PL peak energy of 0.82 eV was obtained for InN grown on Si, consistent with recent reports of a considerably lower of bandgap energy.
Author: Vaibhav Uday Chaudhari
Publisher:
ISBN:
Category :
Languages : en
Pages : 214
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Book Description
It was also found that the polycrystalline nature is as a result of polycrystalline nature of LT-GaN grown on the InN template. It was also shown that formation of completely enclosed uniformly distributed nanovoids were very essential to grow crack free thick GaN which is highly textured in 0002 orientation. It was also shown that GaN grown was very high quality crystal free of Indium. GaN growth on Indium metal deposited on Silicon was also studied. Depending on growth mode and conditions GaN 40 micron thick film and 100nm x 5000nm GaN wafers were successfully grown in same reactor.
Author: 楊富祥
Publisher:
ISBN:
Category :
Languages : en
Pages : 124
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Author: Zhe Chuan Feng
Publisher: World Scientific
ISBN: 1908979941
Category : Technology & Engineering
Languages : en
Pages : 442
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Book Description
III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals./a
Author: Eunjung Cho
Publisher:
ISBN: 9783832284312
Category :
Languages : en
Pages : 146
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Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 1119313015
Category : Technology & Engineering
Languages : en
Pages : 582
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Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Author: Gangyi Chen
Publisher:
ISBN:
Category :
Languages : en
Pages : 234
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Author: Gerald B. Stringfellow
Publisher: Elsevier
ISBN: 0080538185
Category : Science
Languages : en
Pages : 599
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Book Description
Organometallic Vapor-Phase Epitaxy describes the operation of a particular technique for the production of compound semiconductor materials. It describes how the technique works, how it can be used for the growth of particular materials and structures, and the application of these materials for specific devices. It contains not only a fundamental description of the operation of the technique but also contains lists of data useful for the everyday operation of OMVPE reactors. It also offers specific recipes that can be used to produce a wide range of specific materials, structures, and devices. Updated with new emphasis on the semiconducting nitride materials—GaN and its alloys with In and Al Emphasizes the newly understood aspects of surface processes Contains a new chapter, as well as several new sections in chapters on thermodynamics and kinetics
Author: Timothy David Veal
Publisher: CRC Press
ISBN: 1439859612
Category : Technology & Engineering
Languages : en
Pages : 707
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Book Description
Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV. The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor. Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.
Author: Seth Martin Hubbard
Publisher:
ISBN: 9780542299896
Category :
Languages : en
Pages :
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