Self-diffusion and Impurity Diffusion in Pure Metals PDF Download
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Author: Gerhard Neumann
Publisher: Elsevier
ISBN: 0080560040
Category : Technology & Engineering
Languages : en
Pages : 360
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Book Description
Diffusion in metals is an important phenomenon, which has many applications, for example in all kinds of steel and aluminum production, and in alloy formation (technical applications e.g. in superconductivity and semiconductor science). In this book the data on diffusion in metals are shown, both in graphs and in equations.Reliable data on diffusion in metals are required by researchers who try to make sense of results from all kinds of metallurgical experiments, and they are equally needed by theorists and computer modelers. The previous compilation dates from 1990, and measurements relying on the electron microprobe and the recent Rutherford backscattering technique were hardly taken into account there.This reference book, containing all results on self-diffusion and impurity diffusion in pure metals with an indication of their reliability, will be useful to everyone in this field for the theory, fundamental research and industrial applications covered.• Up-to-date and complete (including EPMA and RBS investigations)• Indication of reliability of the measurements• Reassessment of many early results• Data can easily be extracted from Tables and Graphs
Author: Gerhard Neumann
Publisher: Elsevier
ISBN: 0080560040
Category : Technology & Engineering
Languages : en
Pages : 360
Get Book Here
Book Description
Diffusion in metals is an important phenomenon, which has many applications, for example in all kinds of steel and aluminum production, and in alloy formation (technical applications e.g. in superconductivity and semiconductor science). In this book the data on diffusion in metals are shown, both in graphs and in equations.Reliable data on diffusion in metals are required by researchers who try to make sense of results from all kinds of metallurgical experiments, and they are equally needed by theorists and computer modelers. The previous compilation dates from 1990, and measurements relying on the electron microprobe and the recent Rutherford backscattering technique were hardly taken into account there.This reference book, containing all results on self-diffusion and impurity diffusion in pure metals with an indication of their reliability, will be useful to everyone in this field for the theory, fundamental research and industrial applications covered.• Up-to-date and complete (including EPMA and RBS investigations)• Indication of reliability of the measurements• Reassessment of many early results• Data can easily be extracted from Tables and Graphs
Author: Gerhard Neumann
Publisher: Trans Tech Publications Ltd
ISBN: 3035707146
Category : Technology & Engineering
Languages : en
Pages : 205
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Book Description
The systematic investigation of self-diffusion and impurity diffusion in metals began as a result of the availability of a wide variety of artificial radio- isotopes following the Second World War. During the following years, rapid advances in the theory of solid-state diffusion and the ever-increasing number of experimental data were comprehensively described in any number of textbooks and review papers. But impurity diffusion in metals was more or less superficially treated in the textbooks, and some of the review papers, with the result that - even up to now - a comprehensive review of the correct interpretation of impurity diffusion in metals has been lacking.
Author: John Askill
Publisher: Springer Science & Business Media
ISBN: 1468460757
Category : Technology & Engineering
Languages : en
Pages : 108
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Book Description
Atomic diffusion in metals was first discovered some sixty-five years ago, and since then a considerable wealth of data has ac cumulated on diffusion in various systems. However, work prior to about the year 1940 is now mainly of historical interest, since ex periments were often carried out under experimental conditions and with methods of analysis leading to uncertainties in inter preting the measured diffusion coefficients. Data on diffusion rates are of importance in processes which are controlled by rates of atomic migration such as growth of phases and homogenization of alloys. In addition diffusion plays an important part in theories of such phenomena as oxidation, plastic deformation, sintering, and creep. A tremendous advance in diffusion studies was made possible by the availability of radioactive isotopes of sufficiently high spe cific activity after the second world war. Measurements of self diffusion rates then became possible using radioactive isotopes having the same chemical properties as the solvent material, and it also became possible to study tracer impurity diffusion when the concentration of the impurity is so small as not to alter the chemi cal homogeneity of the system. In the last ten to fifteen years the purity of materials used in diffusion studies has increased con siderably and the methods of analysis have become more stand ardized.
Author: H. Bakker
Publisher: Springer
ISBN: 9783540508861
Category : Science
Languages : en
Pages : 0
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Book Description
The interest in diffusion in solids is as old as physical metallurgy or materials science. It stems from application-oriented as well as from scientific reasons. First, a knowledge of diffusion is basic to an understanding of many microstructural changes that occur in solid matter at elevated temperatures. For processes like phase transformations, precipitation or dissolution of a second phase, recrystallization, oxidation, creep, annealing etc., solid state diffusion is fundamental and ubiquitous. The second reason for studying diffusion is to learn more about how atoms move in solid matter. Volume III/26 presents for the first time a comprehensive collection of diffusion data for solid metals and alloys. The critical compilation of data has resulted in tables and series of diagrams which show in 13 chapters data for the following properties: Self- and impurity-diffusion in metallic elements, self-diffusion in homogeneous binary alloys, chemical diffusion in binary and ternary alloys, diffusion in amorphous alloys, diffusion of interstitial foreign atoms like hydrogen, carbon, oxygen and nitrogen in metallic elements, mass and pressure dependence of diffusion, diffusion along dislocations, grain and interphase boundary diffusion, and diffusion on surfaces.
Author: Peter Pichler
Publisher: Springer Science & Business Media
ISBN: 3709105978
Category : Technology & Engineering
Languages : en
Pages : 576
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Book Description
This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Author: Devendra Gupta
Publisher: Springer Science & Business Media
ISBN: 9780080947082
Category : Science
Languages : en
Pages : 552
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Book Description
This new game book for understanding atoms at play aims to document diffusion processes and various other properties operative in advanced technological materials. Diffusion in functional organic chemicals, polymers, granular materials, complex oxides, metallic glasses, and quasi-crystals among other advanced materials is a highly interactive and synergic phenomenon. A large variety of atomic arrangements are possible. Each arrangement affects the performance of these advanced, polycrystalline multiphase materials used in photonics, MEMS, electronics, and other applications of current and developing interest. This book is written by pioneers in industry and academia for engineers, chemists, and physicists in industry and academia at the forefront of today's challenges in nanotechnology, surface science, materials science, and semiconductors.
Author: Deren Yang
Publisher: Springer
ISBN: 9783662564714
Category : Technology & Engineering
Languages : en
Pages : 0
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Book Description
The utilization of sun light is one of the hottest topics in sustainable energy research. To efficiently convert sun power into a reliable energy – electricity – for consumption and storage, silicon and its derivatives have been widely studied and applied in solar cell systems. This handbook covers the photovoltaics of silicon materials and devices, providing a comprehensive summary of the state of the art of photovoltaic silicon sciences and technologies. This work is divided into various areas including but not limited to fundamental principles, design methodologies, wafering techniques/fabrications, characterizations, applications, current research trends and challenges. It offers the most updated and self-explanatory reference to all levels of students and acts as a quick reference to the experts from the fields of chemistry, material science, physics, chemical engineering, electrical engineering, solar energy, etc..
Author: Paul Heitjans
Publisher: Springer Science & Business Media
ISBN: 3540309705
Category : Science
Languages : en
Pages : 971
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Book Description
This comprehensive, handbook-style survey of diffusion in condensed matter gives detailed insight into diffusion as the process of particle transport due to stochastic movement. It is understood and presented as a phenomenon of crucial relevance for a large variety of processes and materials. In this book, all aspects of the theoretical fundamentals, experimental techniques, highlights of current developments and results for solids, liquids and interfaces are presented.
Author: Klaus Graff
Publisher: Springer Science & Business Media
ISBN: 3642571212
Category : Technology & Engineering
Languages : en
Pages : 285
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Book Description
This up-to-date monograph provides a thorough review of the relevant data and properties of the transition-metal impurities generated during silicon-sample and device fabrication. The different mechanisms responsible for contamination are discussed, and a survey is given of their impact on device performance. The specific properties of the main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. This new edition includes important recent data and many new tables.
Author: Cor Claeys
Publisher: Springer
ISBN: 3319939254
Category : Technology & Engineering
Languages : en
Pages : 464
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Book Description
This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.
