Imaging Structure and Impurities in the Core of Silicon Dislocations and Grain Boundaries PDF Download
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Author: Jamie Hoyt Rose
Publisher:
ISBN:
Category :
Languages : en
Pages : 392
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Book Description
Author: Jamie Hoyt Rose
Publisher:
ISBN:
Category :
Languages : en
Pages : 392
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Book Description
Author:
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 1684
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Author: Lawrence Berkeley Laboratory. Materials and Molecular Research Division
Publisher:
ISBN:
Category : Materials
Languages : en
Pages : 340
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Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 768
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Author: Yongkook Park
Publisher:
ISBN:
Category :
Languages : en
Pages : 113
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Book Description
Keywords: electronic structure of silicon grain boundary, retention of impurity at dislocations, hydrogen segregation, thermal dissociation kinetics, impurity gettering, electrical activity of dislocations, hydrogen passivation, carrier recombination activity, multi-crystalline silicon solar cells.
Author:
Publisher: John Wiley & Sons
ISBN: 1118514556
Category : Science
Languages : en
Pages : 416
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Book Description
The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live. The aim of this book is threefold: to present the background physical chemistry on which the technology of semiconductor devices is based; secondly, to describe specific issues such as the role of defects on the properties of solids, and the crucial influence of surface properties; and ultimately, to look at the physics and chemistry of semiconductor growth processes, both at the bulk and thin-film level, together with some issues relating to the properties of nano-devices. Divided into five chapters, it covers: Thermodynamics of solids, including phases and their properties and structural order Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth of semiconductor materials Physical chemistry of semiconductor materials processing With applications across all solid state technologies,the book is useful for advanced students and researchers in materials science, physics, chemistry, electrical and electronic engineering. It is also useful for those in the semiconductor industry.
Author: Daniel M. Fleetwood
Publisher: CRC Press
ISBN: 1420043773
Category : Science
Languages : en
Pages : 772
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Book Description
Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe
Author: Michael Karl Kundmann
Publisher:
ISBN:
Category :
Languages : en
Pages : 406
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Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 696
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Author:
Publisher: Springer Science & Business Media
ISBN: 3642687318
Category : Science
Languages : en
Pages : 156
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Book Description
In solid state physics and in materials science the investigation of the connection between the properties of solids and their microstructure is of major importance. For crystalline materials this connection is related to the lattice structure, and it can be shown convinc ingly that the material properties depend on deviations from the ideal lattice structure in the majority of cases. For this reason a reliable detection and analysis of defects in "nearly perfect" crystals is necessary, and a sufficient spatial resolution of the methods applied is required. Because electrons on the one hand strongly interact with the matter to be investigated and on the other hand can easily be focused electron-optical methods are very advantageous for this purpose. They are used in the diffraction mode, in the imaging mode and in the spectroscopic mode. The attainable high lateral resolution in the imaging mode makes the application of electron microscopy especially effective. Although already valuable information on crystal defects can be gained by using the routine technique of diffraction contrast imagingl-3) which has a resolution of some 4 10 nm - in the special weak-beam technique ) of some nm -, the detection of crystal defects and inhomogeneities, resp. on an atomic or molecular level by the aid of high resolution electron microscopy gets increasing importance.
