III-Nitride Metalorganic Chemical Vapor Deposition System for Development of High Power Electronics PDF Download
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Author:
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Category :
Languages : en
Pages : 0
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Book Description
This award provided funding to purchase a new metal organic chemical vapor deposition (MOCVD) system for growth of GaN-based materials and devices. By combining the money provided by the DURIP award with donations from industry and matching funds from the University of Florida, an epitaxial facility worth $1 M has been constructed. This facility will be used to provide device structures for fabrication of high power GaN-based HEMTs and MOSFETs. This facility will benefit multiple DOD programs including two currently funded by the electronics programs at the U.S. Office of Naval Research (Development Of GaN MOSFETS And MISFETS, US Navy NOOOl4-98-l-0204, Dr. Harry Dietrich) and the U.S. Air Force Office of Scientific Research (Development Of Passivation Technology For Improved GaN/AlGaN HEMT Performance And Reliability, U.S. Air Force F4962O-O2-l-0366, Dr. Gerald Witt). These contracts are aimed at developing improved dielectrics for high power GaN devices and to date have produced significant advances in the quality and effectiveness of dielectric/GaN interfaces. Because of this award, we can now capitalize on the successful oxide development generated by these programs. This equipment will provide a controlled in-house supply of GaN/AlGaN device material in order to identify much more precisely the role of a variety of material parameters as well as device layer structure in the performance of devices containing oxide/nitride interfaces. Acquisition of this system will also enable new avenues of investigation including resistance to thermal, electrical and radiation degradation for both all-nitride and nitride/oxide devices. Finally, acquisition of this MOCVD system will now allow development of a well controlled in-house device technology of the type needed to fabricate more advanced structures and prototypes including ultra-broadband high power and high dynamic range direct- conversion RF transmitters and high temperature III-nitride based gas sensors.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
This award provided funding to purchase a new metal organic chemical vapor deposition (MOCVD) system for growth of GaN-based materials and devices. By combining the money provided by the DURIP award with donations from industry and matching funds from the University of Florida, an epitaxial facility worth $1 M has been constructed. This facility will be used to provide device structures for fabrication of high power GaN-based HEMTs and MOSFETs. This facility will benefit multiple DOD programs including two currently funded by the electronics programs at the U.S. Office of Naval Research (Development Of GaN MOSFETS And MISFETS, US Navy NOOOl4-98-l-0204, Dr. Harry Dietrich) and the U.S. Air Force Office of Scientific Research (Development Of Passivation Technology For Improved GaN/AlGaN HEMT Performance And Reliability, U.S. Air Force F4962O-O2-l-0366, Dr. Gerald Witt). These contracts are aimed at developing improved dielectrics for high power GaN devices and to date have produced significant advances in the quality and effectiveness of dielectric/GaN interfaces. Because of this award, we can now capitalize on the successful oxide development generated by these programs. This equipment will provide a controlled in-house supply of GaN/AlGaN device material in order to identify much more precisely the role of a variety of material parameters as well as device layer structure in the performance of devices containing oxide/nitride interfaces. Acquisition of this system will also enable new avenues of investigation including resistance to thermal, electrical and radiation degradation for both all-nitride and nitride/oxide devices. Finally, acquisition of this MOCVD system will now allow development of a well controlled in-house device technology of the type needed to fabricate more advanced structures and prototypes including ultra-broadband high power and high dynamic range direct- conversion RF transmitters and high temperature III-nitride based gas sensors.
Author: M Razeghi
Publisher: Elsevier
ISBN: 9780080444260
Category : Science
Languages : en
Pages : 602
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Book Description
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Author: Vibhu Jindal
Publisher:
ISBN:
Category : Metal organic chemical vapor deposition
Languages : en
Pages : 263
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Book Description
Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 1119313015
Category : Technology & Engineering
Languages : en
Pages : 582
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Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Author: Rongming Chu
Publisher: Academic Press
ISBN: 0128175443
Category : Electronic apparatus and appliances
Languages : en
Pages : 540
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Book Description
III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas - RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field
Author: Srinivasan Sivaram
Publisher: Springer Science & Business Media
ISBN: 1475747519
Category : Technology & Engineering
Languages : en
Pages : 302
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Book Description
In early 1987 I was attempting to develop a CVD-based tungsten process for Intel. At every step ofthe development, information that we were collecting had to be analyzed in light of theories and hypotheses from books and papers in many unrelated subjects. Thesesources were so widely different that I came to realize there was no unifying treatment of CVD and its subprocesses. More interestingly, my colleagues in the industry were from many disciplines (a surface chemist, a mechanical engineer, a geologist, and an electrical engineer werein my group). To help us understand the field of CVD and its players, some of us organized the CVD user's group of Northern California in 1988. The idea for writing a book on the subject occurred to me during that time. I had already organized my thoughts for a course I taught at San Jose State University. Later Van Nostrand agreed to publish my book as a text intended for students at the senior/first year graduate level and for process engineers in the microelectronics industry, This book is not intended to be bibliographical, and it does not cover every new material being studied for chemical vapor deposition. On the other hand, it does present the principles of CVD at a fundamental level while uniting them with the needs of the microelectronics industry.
Author: John D. Cressler
Publisher: CRC Press
ISBN: 143987431X
Category : Technology & Engineering
Languages : en
Pages : 1041
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Book Description
Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 704
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Book Description
Author: Manijeh Razeghi
Publisher: Springer Science & Business Media
ISBN: 1441910565
Category : Technology & Engineering
Languages : en
Pages : 570
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Book Description
Technology of Quantum Devices offers a multi-disciplinary overview of solid state physics, photonics and semiconductor growth and fabrication. Readers will find up-to-date coverage of compound semiconductors, crystal growth techniques, silicon and compound semiconductor device technology, in addition to intersubband and semiconductor lasers. Recent findings in quantum tunneling transport, quantum well intersubband photodetectors (QWIP) and quantum dot photodetectors (QWDIP) are described, along with a thorough set of sample problems.
Author: Jonathan W. Anderson
Publisher:
ISBN:
Category : Metal organic chemical vapor deposition
Languages : en
Pages : 130
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Book Description
The group III-nitride family of semiconductor materials grown by metalorganic chemical vapor deposition (MOCVD) has had a dramatic impact on optoelectronics and high-frequency, high-power devices in recent years. The nitrides possess wide, direct transition band gaps ranging from 6.2 eV for AlN to 3.4 eV for GaN to 0.9 eV for InN which has allowed the development of LEDs and laser diodes in the blue and UV spectrum. Furthermore, the band gap, combined with a high electron saturation velocity and the piezoelectric properties of the (AlGaIn)N/GaN interface allow for the formation of a two-dimensional electron gas which can be utilized to produce high electron mobility transistors (HEMTs). In this thesis, the installation of a MOCVD reactor at Texas State University and the modifications necessary to make it operational will be presented. Furthermore, the progress made in developing of processes to deposit AlGaN/GaN heterostructures will also be discussed. Finally, evidence of phase separation by spinodal decomposition in a sample of high aluminum content AlGaInN, provided by IQE, from a study by scanning transmission electron microscopy in collaboration with the Yacaman group at the University of Texas as San Antonio will be presented, and the results discussed within the context of the regular solution model.
