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Author: Argonne National Laboratory. Library Services Department
Publisher:
ISBN:
Category : Periodicals
Languages : en
Pages : 286
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Author: Argonne National Laboratory. Library Services Department
Publisher:
ISBN:
Category : Periodicals
Languages : en
Pages : 286
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Author: National Institute of Standards and Technology (U.S.)
Publisher:
ISBN:
Category : Engineering
Languages : en
Pages : 268
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 264
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Author: United States. Patent Office
Publisher:
ISBN:
Category : Patents
Languages : en
Pages : 1902
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Author: Allen Kent
Publisher: CRC Press
ISBN: 9780824720018
Category : Language Arts & Disciplines
Languages : en
Pages : 698
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Book Description
"The Encyclopedia of Library and Information Science provides an outstanding resource in 33 published volumes with 2 helpful indexes. This thorough reference set--written by 1300 eminent, international experts--offers librarians, information/computer scientists, bibliographers, documentalists, systems analysts, and students, convenient access to the techniques and tools of both library and information science. Impeccably researched, cross referenced, alphabetized by subject, and generously illustrated, the Encyclopedia of Library and Information Science integrates the essential theoretical and practical information accumulating in this rapidly growing field."
Author: Hari Singh Nalwa
Publisher: Elsevier
ISBN: 0080533531
Category : Science
Languages : en
Pages : 562
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Book Description
Recent developments in microelectronics technologies have created a great demand for interlayer dielectric materials with a very low dielectric constant. They will play a crucial role in the future generation of IC devices (VLSI/UISI and high speed IC packaging). Considerable efforts have been made to develop new low as well as high dielectric constant materials for applications in electronics industries. Besides achieving either low or high dielectric constants, other materials' properties such as good processability, high mechanical strength, high thermal and environmental stability, low thermal expansion, low current leakage, low moisture absorption, corrosion resistant, etc., are of equal importance. Many chemical and physical strategies have been employed to get desired dielectric materials with high performance. This is a rapidly growing field of science--both in novel materials and their applications to future packing technologies. The experimental data on inorganic and organic materials having low or high dielectric constant remail scattered in the literature. It is timely, therfore, to consolidate the current knowledge on low and high dielectric constant materials into a sigle reference source. Handbook of Low and High Dielectric Constant Materials and Their Applications is aimed at bringing together under a sigle cover (in two volumes) all low and high dielectric constant materials currently studied in academic and industrial research covering all spects of inorgani an organic materials from their synthetic chemistry, processing techniques, physics, structure-property relationship to applications in IC devices. This book will summarize the current status of the field covering important scientific developments made over the past decade with contributions from internationally recognized experts from all over the world. Fully cross-referenced, this book has clear, precise, and wide appeal as an essential reference source for all those interested in low and high dielectric constant material.
Author: D.M. Walker
Publisher: Springer Science & Business Media
ISBN: 1475719310
Category : Computers
Languages : en
Pages : 214
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Book Description
In the summer of 1981 I was asked to consider the possibility of manufacturing a 600,000 transistor microprocessor in 1985. It was clear that the technology would only be capable of manufacturing 100,000-200,000 transistor chips with acceptable yields. The control store ROM occupied approximately half of the chip area, so I considered adding spare rows and columns to increase ROM yield. Laser-programmed polysilicon fuses would be used to switch between good and bad circuits. Since only half the chip area would have redundancy, I was concerned that the increase in yield would not outweigh the increased costs of testing and redundancy programming. The fabrication technology did not yet exist, so I was unable to experimentally verify the benefits of redundancy. When the technology did become available, it would be too late in the development schedule to spend time running test chips. The yield analysis had to be done analytically or by simulation. Analytic yield analysis techniques did not offer sufficient accuracy for dealing with complex structures. The simulation techniques then available were very labor-intensive and seemed more suitable for redundant memories and other very regular structures [Stapper 80J. I wanted a simulator that would allow me to evaluate the yield of arbitrary redundant layouts, hence I termed such a simulator a layout or yield simulator. Since I was unable to convince anyone to build such a simulator for me, I embarked on the research myself.
Author:
Publisher:
ISBN:
Category : Physical instruments
Languages : en
Pages : 64
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Author: National Institute of Law Enforcement and Criminal Justice
Publisher:
ISBN:
Category : Government publications
Languages : en
Pages : 24
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Author: Library of Congress. Copyright Office
Publisher: Copyright Office, Library of Congress
ISBN:
Category : Copyright
Languages : en
Pages : 1642
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