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Author: Jacques I. Pankove
Publisher: Academic Press
ISBN: 0080864317
Category : Technology & Engineering
Languages : en
Pages : 655
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Book Description
Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference
Author: Jacques I. Pankove
Publisher: Academic Press
ISBN: 0080864317
Category : Technology & Engineering
Languages : en
Pages : 655
Get Book Here
Book Description
Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference
Author: M. Stutzmann
Publisher: Elsevier
ISBN: 0444598839
Category : Science
Languages : en
Pages : 598
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Book Description
Hydrogen on semiconductor surfaces has been an area of considerable activity over the last two decades. Structural, thermal, and dynamical properties of hydrogen chemisorbed on crystalline silicon and other semiconductors have been studied in great detail. These properties serve as a reference for related, but more complex systems such as hydrogen at multiple vacancies in crystalline semiconductors or at microvoids in amorphous samples. Interesting from a surface physics point of view is the fact that hydrogen as a monovalent element is an ideal terminator for unsaturated bonds on surfaces and therefore tends to have a large influence on surface reconstruction. A related phenomenon with large technological impact (for example in low cost solar cells) is the passivation of grain boundaries in microcrystalline semiconductors. Finally, hydrogenated semiconductor surfaces always appear as a boundary layer during low-energy hydrogenation of bulk semiconductors, so that a complete description of hydrogen uptake or desorption necessarily has to take these surfaces into account. This collection of invited and contributed papers has been carefully balanced to deal with amorphous and crystalline semiconductors and surfaces and presents basic and experimental work (basic and applied) as well as theory. The resulting volume presents a summary of the state-of-the-art in the field of hydrogen in semiconductors and will hopefully stimulate future work in this area.
Author:
Publisher: Academic Press
ISBN: 0080525253
Category : Science
Languages : en
Pages : 541
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Book Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. - Provides the most in-depth coverage of hydrogen in silicon available in a single source - Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors - Combines both experimental and theoretical studies to form a comprehensive reference
Author: Norbert H. Nickel
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 216
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Book Description
The study of hydrogen in solids is of significant importance in modern technology. Often present in large concentrations by various growth techniques, hydrogen affects the structural, electronic, and optical properties of crystals. Isolated hydrogen is often electrically active, causing passivation or charge compensation of defects and impurities. Since the presidential proposal of the Freedom Car, hydrogen in semiconductors takes another twist as a potential source of clean fuel for the future. The study of hydrogen transport, diffusion, and chemical reaction in solids is, therefore, of significant social importance. But as often happens in science, different groups of researchers studying hydrogen in solids do not always speak the same language. For example, few people would consider silicon as a practical fuel storage material due to its weight, but in reality, aluminum hydrides have been seriously considered for such a purpose. The knowledge acquired in the last half century for hydrogen in conventional semiconductors has not been effectively transferred to the study of hydrogen storage in emerging semiconductors such as carbon nanotubes. This volume brings together scientists from various research areas to encourage cross fertilization and wider dissemination of the advances in this important field of study. Highlights include recent developments in the understanding of light-induced metastability in amorphous silicon, hydrogen in zinc oxide as a means of n-type doping, and hydrogen doping of dilute nitrides that modifies the bandgap in some rather surprising ways. Hydrogen interaction with donors and acceptors is a never-ending story that is also featured here. Topics include: hydrogen in elemental semiconductors; hydrogen in oxides; and general properties of hydrogen in semiconductors.
Author: Marius Grundmann
Publisher: Springer Science & Business Media
ISBN: 3540346619
Category : Science
Languages : en
Pages : 702
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Book Description
Brings the reader to an overview of the subject as a whole and to the point where they can specialize and enter supervised laboratory research Provides a balance between aspects of solid state and semiconductor physics and the concepts of various semiconductor devices and their applications in electric and photonic devices. Proffers explicit formulas (with the help of Mathematica) for as many as possible results, going beyond current textbook equations, thus makes easier to understand for undergrads.
Author: Norbert H. Nickel
Publisher:
ISBN:
Category : Metals
Languages : en
Pages : 480
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Book Description
Author: S.J. Pearton
Publisher: Trans Tech Publications Ltd
ISBN: 3035704821
Category : Technology & Engineering
Languages : en
Pages : 543
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Book Description
State-of-the-art reviews on all the major areas of interest are brought together in this book, namely the role of hydrogen during epitaxial growth, its entry into the material during processing, its subsequent diffusivity and bonding with dopants, other impurities or defects, its effect on device performance and reliability and positive uses for hydrogen in passivating surfaces.
Author: Victor I. Fistul
Publisher: CRC Press
ISBN: 0203299256
Category : Science
Languages : en
Pages : 435
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Book Description
Although there is a good deal of research concerning semiconductor impurities available, most publications on the subject are very specialized and very theoretical. Until now, the field lacked a text that described the current experimental data, applications, and theory concerning impurities in semiconductor physics. Impurities in Semicondu
Author: E M Anastassakis
Publisher: World Scientific
ISBN: 9814583634
Category :
Languages : en
Pages : 2768
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Book Description
Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.
Author:
Publisher: Academic Press
ISBN: 0080864333
Category : Technology & Engineering
Languages : en
Pages : 461
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Book Description
Spectroscopic techniques are among the most powerful characterization methods used to study semiconductors. This volume presents reviews of a number of major spectroscopic techniques used to investigate bulk and artificially structured semiconductors including: photoluminescence, photo-reflectance, inelastic light scattering, magneto-optics, ultrafast work, piezo-spectroscopy methods, and spectroscopy at extremely low temperatures and high magnetic fields. Emphasis is given to major semiconductor systems, and artificially structured materials such as GaAs, InSb, Hg1-xCdxTe and MBE grown structures based upon GaAs/AlGaAs materials. Both the spectroscopic novice and the expert will benefit from the descriptions and discussions of the methods, principles, and applications relevant to today's semiconductor structures.Key Features* Discusses the latest advances in spectroscopic techniques used to investigate bulk and artificially structured semiconductors* Features detailed review articles which cover basic principles* Highlights specific applications such as the use of laser spectroscopy for the characterization of GaAs quantum well structures
