Author: S.J. Pearton
Publisher: Trans Tech Publications Ltd
ISBN: 3035704821
Category : Technology & Engineering
Languages : en
Pages : 543
Book Description
State-of-the-art reviews on all the major areas of interest are brought together in this book, namely the role of hydrogen during epitaxial growth, its entry into the material during processing, its subsequent diffusivity and bonding with dopants, other impurities or defects, its effect on device performance and reliability and positive uses for hydrogen in passivating surfaces.
Hydrogen in Compound Semiconductors
Compound Semiconductors 1998
Author: H Sakaki
Publisher: CRC Press
ISBN: 1000157148
Category : Science
Languages : en
Pages : 931
Book Description
Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. Coverage in this volume reflects the increased interest and research funding in nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.
Publisher: CRC Press
ISBN: 1000157148
Category : Science
Languages : en
Pages : 931
Book Description
Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. Coverage in this volume reflects the increased interest and research funding in nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.
Hydrogen in Semiconductors
Author: M. Stutzmann
Publisher: Elsevier
ISBN: 0444598839
Category : Science
Languages : en
Pages : 598
Book Description
Hydrogen on semiconductor surfaces has been an area of considerable activity over the last two decades. Structural, thermal, and dynamical properties of hydrogen chemisorbed on crystalline silicon and other semiconductors have been studied in great detail. These properties serve as a reference for related, but more complex systems such as hydrogen at multiple vacancies in crystalline semiconductors or at microvoids in amorphous samples. Interesting from a surface physics point of view is the fact that hydrogen as a monovalent element is an ideal terminator for unsaturated bonds on surfaces and therefore tends to have a large influence on surface reconstruction. A related phenomenon with large technological impact (for example in low cost solar cells) is the passivation of grain boundaries in microcrystalline semiconductors. Finally, hydrogenated semiconductor surfaces always appear as a boundary layer during low-energy hydrogenation of bulk semiconductors, so that a complete description of hydrogen uptake or desorption necessarily has to take these surfaces into account. This collection of invited and contributed papers has been carefully balanced to deal with amorphous and crystalline semiconductors and surfaces and presents basic and experimental work (basic and applied) as well as theory. The resulting volume presents a summary of the state-of-the-art in the field of hydrogen in semiconductors and will hopefully stimulate future work in this area.
Publisher: Elsevier
ISBN: 0444598839
Category : Science
Languages : en
Pages : 598
Book Description
Hydrogen on semiconductor surfaces has been an area of considerable activity over the last two decades. Structural, thermal, and dynamical properties of hydrogen chemisorbed on crystalline silicon and other semiconductors have been studied in great detail. These properties serve as a reference for related, but more complex systems such as hydrogen at multiple vacancies in crystalline semiconductors or at microvoids in amorphous samples. Interesting from a surface physics point of view is the fact that hydrogen as a monovalent element is an ideal terminator for unsaturated bonds on surfaces and therefore tends to have a large influence on surface reconstruction. A related phenomenon with large technological impact (for example in low cost solar cells) is the passivation of grain boundaries in microcrystalline semiconductors. Finally, hydrogenated semiconductor surfaces always appear as a boundary layer during low-energy hydrogenation of bulk semiconductors, so that a complete description of hydrogen uptake or desorption necessarily has to take these surfaces into account. This collection of invited and contributed papers has been carefully balanced to deal with amorphous and crystalline semiconductors and surfaces and presents basic and experimental work (basic and applied) as well as theory. The resulting volume presents a summary of the state-of-the-art in the field of hydrogen in semiconductors and will hopefully stimulate future work in this area.
State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXI)
Author: D. N. Buckley
Publisher: The Electrochemical Society
ISBN: 9781566772402
Category : Technology & Engineering
Languages : en
Pages : 266
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566772402
Category : Technology & Engineering
Languages : en
Pages : 266
Book Description
Reliability And Radiation Effects In Compound Semiconductors
Author: Allan H Johnston
Publisher: World Scientific
ISBN: 9814467650
Category : Technology & Engineering
Languages : en
Pages : 376
Book Description
This book focuses on reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. It starts with first principles, and shows how advances in device design and manufacturing have suppressed many of the older reliability mechanisms.It is the first book that comprehensively covers reliability and radiation effects in optoelectronic as well as microelectronic devices. It contrasts reliability mechanisms of compound semiconductors with those of silicon-based devices, and shows that the reliability of many compound semiconductors has improved to the level where they can be used for ten years or more with low failure rates.
Publisher: World Scientific
ISBN: 9814467650
Category : Technology & Engineering
Languages : en
Pages : 376
Book Description
This book focuses on reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. It starts with first principles, and shows how advances in device design and manufacturing have suppressed many of the older reliability mechanisms.It is the first book that comprehensively covers reliability and radiation effects in optoelectronic as well as microelectronic devices. It contrasts reliability mechanisms of compound semiconductors with those of silicon-based devices, and shows that the reliability of many compound semiconductors has improved to the level where they can be used for ten years or more with low failure rates.
Handbook of Compound Semiconductors
Author: Paul H. Holloway
Publisher: Cambridge University Press
ISBN: 0080946143
Category : Technology & Engineering
Languages : en
Pages : 937
Book Description
This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.
Publisher: Cambridge University Press
ISBN: 0080946143
Category : Technology & Engineering
Languages : en
Pages : 937
Book Description
This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.
State-of-the-Art Program on Compound Semiconductors : (SOTAPOCS XLII) and Processes at the Compound-Semiconductor/Solution Interface
Author: P. C. Chang
Publisher: The Electrochemical Society
ISBN: 9781566774628
Category : Technology & Engineering
Languages : en
Pages : 500
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566774628
Category : Technology & Engineering
Languages : en
Pages : 500
Book Description
State-of-the-Art Program on Compound Semiconductors 46 (SOTAPOCS 46) -and- Processes at the Semiconductor/Solution Interface 2
Author: C. O'Dwyer
Publisher: The Electrochemical Society
ISBN: 1566775515
Category : Compound semiconductors
Languages : en
Pages : 647
Book Description
Section 1 addresses the most recent developments in processes at the semiconductor-solution interface include etching, oxidation, passivation, film growth, porous semiconductor formation, electrochemical, photoelectrochemical, electroluminescence and photoluminescence processes, electroanalytical measurements and related topics on both elemental and compound semiconductors. Section 2 addresses the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and related topics.
Publisher: The Electrochemical Society
ISBN: 1566775515
Category : Compound semiconductors
Languages : en
Pages : 647
Book Description
Section 1 addresses the most recent developments in processes at the semiconductor-solution interface include etching, oxidation, passivation, film growth, porous semiconductor formation, electrochemical, photoelectrochemical, electroluminescence and photoluminescence processes, electroanalytical measurements and related topics on both elemental and compound semiconductors. Section 2 addresses the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and related topics.
CVD of Compound Semiconductors
Author: Anthony C. Jones
Publisher: John Wiley & Sons
ISBN: 3527614621
Category : Science
Languages : en
Pages : 352
Book Description
Chemical growth methods of electronic materials are the keystone of microelectronic device processing. This book discusses the applications of metalorganic chemistry for the vapor phase deposition of compound semiconductors. Vapor phase methods used for semiconductor deposition and the materials properties that make the organometallic precursors useful in the electronics industry are discussed for a variety of materials. Topics included: * techniques for compound semiconductor growth * metalorganic precursors for III-V MOVPE * metalorganic precursors for II-VI MOVPE * single-source precursors * chemical beam epitaxy * atomic layer epitaxy Several useful appendixes and a critically selected, up-to-date list of references round off this practical handbook for materials scientists, solid-state and organometallic chemists, and engineers.
Publisher: John Wiley & Sons
ISBN: 3527614621
Category : Science
Languages : en
Pages : 352
Book Description
Chemical growth methods of electronic materials are the keystone of microelectronic device processing. This book discusses the applications of metalorganic chemistry for the vapor phase deposition of compound semiconductors. Vapor phase methods used for semiconductor deposition and the materials properties that make the organometallic precursors useful in the electronics industry are discussed for a variety of materials. Topics included: * techniques for compound semiconductor growth * metalorganic precursors for III-V MOVPE * metalorganic precursors for II-VI MOVPE * single-source precursors * chemical beam epitaxy * atomic layer epitaxy Several useful appendixes and a critically selected, up-to-date list of references round off this practical handbook for materials scientists, solid-state and organometallic chemists, and engineers.
State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics IV
Author: R. F. Kopf
Publisher: The Electrochemical Society
ISBN: 9781566773911
Category : Technology & Engineering
Languages : en
Pages : 422
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566773911
Category : Technology & Engineering
Languages : en
Pages : 422
Book Description