High Performance Devices - Proceedings Of The 2004 Ieee Lester Eastman Conference PDF Download
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Author: Robert Leoni
Publisher: World Scientific
ISBN: 9814480800
Category : Technology & Engineering
Languages : en
Pages : 314
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Book Description
This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and circuits. A broad coverage of topics relating to high performance devices and circuits is featured here. There are 46 contributed papers covering a wide range of materials, device types, and applications. These papers describe the results of ongoing research in three general areas: high speed technologies for advanced mixed signal and terahertz applications, advanced technologies for high performance optical links and light sources, and high power density and high efficiency technologies for next generation microwave front ends and power electronics.
Author: Robert Leoni
Publisher: World Scientific
ISBN: 9814480800
Category : Technology & Engineering
Languages : en
Pages : 314
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Book Description
This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and circuits. A broad coverage of topics relating to high performance devices and circuits is featured here. There are 46 contributed papers covering a wide range of materials, device types, and applications. These papers describe the results of ongoing research in three general areas: high speed technologies for advanced mixed signal and terahertz applications, advanced technologies for high performance optical links and light sources, and high power density and high efficiency technologies for next generation microwave front ends and power electronics.
Author: Michael S Shur
Publisher: World Scientific
ISBN: 9814466581
Category : Technology & Engineering
Languages : en
Pages : 203
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Book Description
Advanced High Speed Devices covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, to key US Government scientists, such as Dr Michael Wraback.
Author: Michael S. Shur
Publisher: World Scientific
ISBN: 9814287873
Category : Science
Languages : en
Pages : 203
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Book Description
Advanced High Speed Devices covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, to key US Government scientists, such as Dr Michael Wraback. Sample Chapter(s). Chapter 1: Simulation and Experimental Results on Gan Based Ultra-Short Planar Negative Differential Conductivity Diodes for THZ Power Generation (563 KB). Contents: Simulation and Experimental Results on GaN Basee Ultra-Short Planar Negative Differential Conductivity Diodes for THz Power Generation (B Aslan et al.); Millimeter Wave to Terahertz in CMOS (K K O S Sankaran et al.); Surface Acoustic Wave Propagation in GaN-On-Sapphire Under Pulsed Sub-Band Ultraviolet Illumination (V S Chivukula et al.); The First 70nm 6-Inch GaAs PHEMT MMIC Process (H Karimy et al.); Performance of MOSFETs on Reactive-Ion-Etched GaN Surfaces (K Tang et al.); GaN Transistors for Power Switching and Millimeter-Wave Applications (T Ueda et al.); Bi-Directional Scalable Solid-State Circuit Breakers for Hybrid-Electric Vehicles (D P Urciuoli & V Veliadis); and other papers. Readership: Electronic engineers, solid state physicists, graduate students studying physics or electrical engineering.
Author: C. Y. Chang
Publisher: John Wiley & Sons
ISBN: 9780471856412
Category : Technology & Engineering
Languages : en
Pages : 632
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Book Description
The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.
Author: Jung Han Choi
Publisher: CRC Press
ISBN: 1351831577
Category : Science
Languages : en
Pages : 261
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Book Description
Presenting the cutting-edge results of new device developments and circuit implementations, High-Speed Devices and Circuits with THz Applications covers the recent advancements of nano devices for terahertz (THz) applications and the latest high-speed data rate connectivity technologies from system design to integrated circuit (IC) design, providing relevant standard activities and technical specifications. Featuring the contributions of leading experts from industry and academia, this pivotal work: Discusses THz sensing and imaging devices based on nano devices and materials Describes silicon on insulator (SOI) multigate nanowire field-effect transistors (FETs) Explains the theory underpinning nanoscale nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs), simulation methods, and their results Explores the physics of the silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), as well as commercially available SiGe HBT devices and their applications Details aspects of THz IC design using standard silicon (Si) complementary metal-oxide-semiconductor (CMOS) devices, including experimental setups for measurements, detection methods, and more An essential text for the future of high-frequency engineering, High-Speed Devices and Circuits with THz Applications offers valuable insight into emerging technologies and product possibilities that are attractive in terms of mass production and compatibility with current manufacturing facilities.
Author: Takahiko Misugi
Publisher: Springer Science & Business Media
ISBN: 1475797745
Category : Science
Languages : en
Pages : 311
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Book Description
In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh speed applications. GaAs MESFETs have been applied in microwave systems as low-noise and high-power amplifiers since the early 1970s, replacing silicon devices. The heterojunction high-electron-mobility transistor (HEMT), invented in 1980, has become a key component for satellite broadcasting receiver systems, serving as the ultra-low-noise device at 12 GHz. Furthermore, the heterojunction bipolar transistor (HBT) has been considered as having the highest switching speed and cutoff frequency in the semiconductor device field. Initially most of these devices were used for analog high-frequency applications, but there is also a strong need to develop high-speed III-V digital devices for computer, telecom munication, and instrumentation systems, to replace silicon high-speed devices, because of the switching-speed and power-dissipation limitations of silicon. The potential high speed and low power dissipation of digital integrated circuits using GaAs MESFET, HEMT, HBT, and superconducting Josephson junction devices has evoked tremendous competition in the race to develop such technology. A technology review shows that Japanese research institutes and companies have taken the lead in the development of these devices, and some integrated circuits have already been applied to supercomputers in Japan. The activities of Japanese research institutes and companies in the III-V and superconducting device fields have been superior for three reasons. First, bulk crystal growth, epitaxial growth, process, and design technology were developed at the same time.
Author: Daniel Durini
Publisher: Woodhead Publishing
ISBN: 0081024355
Category : Technology & Engineering
Languages : en
Pages : 542
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Book Description
High Performance Silicon Imaging: Fundamentals and Applications of CMOS and CCD Sensors, Second Edition, covers the fundamentals of silicon image sensors, addressing existing performance issues and current and emerging solutions. Silicon imaging is a fast growing area of the semiconductor industry. Its use in cell phone cameras is already well established, with emerging applications including web, security, automotive and digital cinema cameras. The book has been revised to reflect the latest state-of-the art developments in the field, including 3D imaging, advances in achieving lower signal noise, and new applications for consumer markets. The fundamentals section has also been expanded to include a chapter on the characterization and testing of CMOS and CCD sensors that is crucial to the success of new applications. This book is an excellent resource for both academics and engineers working in the optics, photonics, semiconductor and electronics industries. - Covers the fundamentals of silicon-based image sensors and technical advances, focusing on performance issues - Looks at image sensors in applications, such as mobile phones, scientific imaging, and TV broadcasting, and in automotive, consumer and biomedical applications - Addresses the theory behind 3D imaging and 3D sensor development, including challenges and opportunities
Author: Doug Sillars
Publisher: "O'Reilly Media, Inc."
ISBN: 1491914017
Category : Computers
Languages : en
Pages : 264
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Book Description
Annotation In a virtual sea of Android apps, the key to survival in the form of user engagement, referrals and purchases is simple: performance and perceived speed. But building a high performance app isn't easy in a fast-paced and rapidly changing environment where new devices, platforms and development tools are announced almost daily. This practical guide provides tools and tips that will help you take app performance to a new level.
Author: Behzad Razavi
Publisher: John Wiley & Sons
ISBN: 9780780311497
Category : Technology & Engineering
Languages : ja
Pages : 516
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Book Description
Featuring an extensive 40 page tutorial introduction, this carefully compiled anthology of 65 of the most important papers on phase-locked loops and clock recovery circuits brings you comprehensive coverage of the field-all in one self-contained volume. You'll gain an understanding of the analysis, design, simulation, and implementation of phase-locked loops and clock recovery circuits in CMOS and bipolar technologies along with valuable insights into the issues and trade-offs associated with phase locked systems for high speed, low power, and low noise.
Author: Behzad Razavi
Publisher: Wiley-IEEE Press
ISBN: 9780471447276
Category : Technology & Engineering
Languages : en
Pages : 736
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Book Description
Comprehensive coverage of recent developments in phase-locked loop technology The rapid growth of high-speed semiconductor and communication technologies has helped make phase-locked loops (PLLs) an essential part of memories, microprocessors, radio-frequency (RF) transceivers, broadband data communication systems, and other burgeoning fields. Complementing his 1996 Monolithic Phase-Locked Loops and Clock Recovery Circuits (Wiley-IEEE Press), Behzad Razavi now has collected the most important recent writing on PLL into a comprehensive, self-contained look at PLL devices, circuits, and architectures. Phase-Locking in High-Performance Systems: From Devices to Architectures' five original tutorials and eighty-three key papers provide an eminently readable foundation in phase-locked systems. Analog and digital circuit designers will glean a wide range of practical information from the book's . . . * Tutorials dealing with devices, delay-locked loops (DLLs), fractional-N synthesizers, bang-bang PLLs, and simulation of phase noise and jitter * In-depth discussions of passive devices such as inductors, transformers, and varactors * Papers on the analysis of phase noise and jitter in various types of oscillators * Concentrated examinations of building blocks, including the design of oscillators, frequency dividers, and phase/frequency detectors * Articles addressing the problem of clock generation by phase-locking for timing and digital applications, RF synthesis, and the application of phase-locking to clock and data recovery circuits In tandem with its companion volume, Phase-Locking in High-Performance Systems: From Devices to Architectures is a superb reference for anyone working on, or seeking to better understand, this rapidly-developing and increasingly central technology.
