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Author: Christoph Jungemann
Publisher: Springer Science & Business Media
ISBN: 3709160863
Category : Technology & Engineering
Languages : en
Pages : 278
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Book Description
This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
Author: Christoph Jungemann
Publisher: Springer Science & Business Media
ISBN: 3709160863
Category : Technology & Engineering
Languages : en
Pages : 278
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Book Description
This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
Author: Michael Schrter
Publisher: World Scientific
ISBN: 981427321X
Category : Technology & Engineering
Languages : en
Pages : 753
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Book Description
Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.
Author: Siegfried Selberherr
Publisher: Springer
ISBN: 9780387825045
Category : Science
Languages : en
Pages : 532
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Book Description
Author: Bernard P. Zeigler
Publisher: Academic Press
ISBN: 1483264912
Category : Technology & Engineering
Languages : en
Pages : 416
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Book Description
Object-Oriented Simulation with Hierarchical, Modular Models: Intelligent Agents and Endomorphic Systems describes an approach to object-oriented discrete event simulation and the concepts of hierarchical, modular model construction, The implementation of the concepts of multifaceted modeling methodology in the DEVS-Scheme modeling and simulation environment is discussed. The use of the DEVS-Scheme environment in modeling artificial intelligent agents is also considered, along with the concept of endomorphism to characterize the application of self-embedded models, including models of self. Comprised of 15 chapters, this book begins with an overview of the dimensions of knowledge representation in simulation environments, followed by a discussion on object-oriented programming as well as the concepts of modular, hierarchical models and the system entity structure. Subsequent chapters focus on digraph-models and experimental frames; DEVS formalism and DEVS-Scheme simulation environment; a model base for simple multi-computer architectures; and rule-based specification of atomic models. Model bases in endomorphic systems and intelligent agents are also examined. This monograph will be of interest to simulation theorists as well as practitioners and researchers in the fields of artificial intelligence, systems engineering, computer science and engineering, and operations research.
Author: Maxim Ryzhii
Publisher: World Scientific
ISBN: 9812779043
Category : Technology & Engineering
Languages : en
Pages : 194
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Book Description
Physics and Modeling of Tera- and Nano-Devices is a compilation of papers by well-respected researchers working in the field of physics and modeling of novel electronic and optoelectronic devices. The topics covered include devices based on carbon nanotubes, generation and detection of terahertz radiation in semiconductor structures including terahertz plasma oscillations and instabilities, terahertz photomixing in semiconductor heterostructures, spin and microwave-induced phenomena in low-dimensional systems, and various computational aspects of device modeling. Researchers as well as graduate and postgraduate students working in this field will benefit from reading this book.
Author: Wladyslaw Grabinski
Publisher: Springer Science & Business Media
ISBN: 9048130468
Category : Technology & Engineering
Languages : en
Pages : 210
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Book Description
Semiconductor power electronics plays a dominant role due its increased efficiency and high reliability in various domains including the medium and high electrical drives, automotive and aircraft applications, electrical power conversion, etc. Power/HVMOS Devices Compact Modeling will cover very extensive range of topics related to the development and characterization power/high voltage (HV) semiconductor technologies as well as modeling and simulations of the power/HV devices and smart power integrated circuits (ICs). Emphasis is placed on the practical applications of the advanced semiconductor technologies and the device level compact/spice modeling. This book is intended to provide reference information by selected, leading authorities in their domain of expertise. They are representing both academia and industry. All of them have been chosen because of their intimate knowledge of their subjects as well as their ability to present them in an easily understandable manner.
Author: Venkata Dinavahi
Publisher: Springer Nature
ISBN: 303086782X
Category : Technology & Engineering
Languages : en
Pages : 492
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Book Description
This textbook introduces methods of accelerating transient stability (dynamic) simulation and electromagnetic transient simulation on massively parallel processors for large-scale AC-DC grids – two of the most common and computationally onerous studies done by energy control centers and research laboratories for the planning, design, and operation of such integrated grids for ensuring the security and reliability of electric power. Simulation case studies provided in the book range from small didactic test circuits to realistic-sized AC-DC grids, and special emphasis is placed on detailed device-level multi-physics models for power system equipment and decomposition techniques for simulating large-scale systems. Parallel Dynamic and Transient Simulation of Large-Scale Power Systems: A High Performance Computing Solution is a comprehensive state-of-the-art guide for upper-level undergraduate and graduate students in power systems engineering. Practicing engineers, software developers, and scientists working in the power and energy industry will find it to be a timely and valuable reference for solving potential problems in their design and development activities. Detailed device-level electro-thermal modeling for power electronic systems in DC grids; Provides comprehensive dynamic and transient simulation of integrated large-scale AC-DC grids; Offers detailed models of renewable energy system models.
Author: Tibor Grasser
Publisher: Springer Science & Business Media
ISBN: 3211728619
Category : Technology & Engineering
Languages : en
Pages : 472
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Book Description
This volume contains the proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria. It provides a global forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance.
Author: Vassil Palankovski
Publisher: Springer Science & Business Media
ISBN: 3709105609
Category : Technology & Engineering
Languages : en
Pages : 309
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Book Description
The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Author: Ansgar Jüngel
Publisher: Springer Science & Business Media
ISBN: 3709106095
Category : Mathematics
Languages : en
Pages : 195
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Book Description
The papers in this book originate from lectures which were held at the "Vienna Workshop on Nonlinear Models and Analysis" – May 20–24, 2002. They represent a cross-section of the research field Applied Nonlinear Analysis with emphasis on free boundaries, fully nonlinear partial differential equations, variational methods, quasilinear partial differential equations and nonlinear kinetic models.
