Growth and Properties of Thin Film Semiconducting Iron Disilicide Produced by Pulsed Laser Deposition

Growth and Properties of Thin Film Semiconducting Iron Disilicide Produced by Pulsed Laser Deposition PDF Author: Charles H. Olk
Publisher:
ISBN:
Category :
Languages : en
Pages : 302

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Growth and Properties of Thin Film Semiconducting Iron Disilicide Produced by Pulsed Laser Deposition

Growth and Properties of Thin Film Semiconducting Iron Disilicide Produced by Pulsed Laser Deposition PDF Author: Charles H. Olk
Publisher:
ISBN:
Category :
Languages : en
Pages : 302

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Semiconducting Properties of Oxide Thin Films Prepared by Pulsed Laser Deposition

Semiconducting Properties of Oxide Thin Films Prepared by Pulsed Laser Deposition PDF Author: Ching-yee Lam
Publisher:
ISBN:
Category : Pulsed laser deposition
Languages : en
Pages : 328

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Growth of Semiconductor Thin Films by Pulsed Laser Deposition

Growth of Semiconductor Thin Films by Pulsed Laser Deposition PDF Author: Yilu Li
Publisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages : 97

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Pulsed ultraviolet light from a XeF excimer laser was used to grow thin films of zinc oxide and tin dioxide on (111) p-type silicon wafers within a versatile high vacuum laser deposition system. This pulsed laser deposition system was self-designed and self-built. Parameters such as pressure, target temperature, and distance from the target to the substrate can be adjusted in the system. Scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction spectroscopy, Raman spectroscopy and ellipsometry were used to analyze the structures and properties of ZnO and SnO2 thin films. The critical temperature required to fabricate a crystalline ZnO thin film by pulsed laser deposition was found and has been confirmed. For the SnO2 thin film, the critical temperature required to generate a crystalline structure could not be found because of the temperature limit of the substrate heater used in the experiment. In SnO2 thin films, thermal annealing has been used to convert into crystalline structure with (110), (101) and (211) orientations. After fabricating the amorphous SnO2 thin films, they were put into an oven with specific temperatures to anneal them. The minimum annealing temperature range was found for converting the amorphous SnO2 thin films into SnO2 thin films with a crystalline structure. Thermal annealing has also been applied to some amorphous ZnO thin films which were fabricated under the critical temperature required to produce crystalline ZnO thin films. The minimum annealing temperature range for amorphous ZnO thin films was found and only one orientation (002) shown after annealing. Laser annealing technology has also been applied for converting both amorphous ZnO and SnO2 thin films, and results show that this method was not well suited for this attempt. ZnO thin films and SnO2 thin films with a crystalline structure have inportant widely used in industry, for example, application in devices such as solar cells and UV or blue-light-emitting devices. The aim of this research is to help improving the manufacturing process of ZnO and SnO2 thin films.

Growth and Characterization of Wide-gap Semiconducting Oxide and Chalcogenide Thin Films by Pulsed Laser Deposition

Growth and Characterization of Wide-gap Semiconducting Oxide and Chalcogenide Thin Films by Pulsed Laser Deposition PDF Author: Paul F. Newhouse
Publisher:
ISBN: 9780549913696
Category : Chalcogenides
Languages : en
Pages : 163

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The preparation and characterization of thin film oxides and chalcogenides by pulsed laser deposition (PLD) is presented. An overview of fundamental PLD concepts are presented and are followed by a description implementation and development of the PLD systems at OSU. We present the results of thin film growth of high electron mobility In2O3:W in which we have prepared films exhibiting □ > 100 cm2/Vs on vitreous SiO2 substrates. The growth of Cu3TaQ 4 (Q = S, Se) films is outlined as a two step process consisting of PLD of ceramic targets followed by ex-situ annealing in chalcogenide vapor. Also, BiCuOSe thin films have been prepared in-situ and exhibit a high hole mobility up to 4 cm2/Vs. A discussion of their electronic structure is presented which explains the nature of the low band gap energy on the basis of deep Bi 6p level at the conduction band minimum. Finally, the results of BaBiO3 thin film preparation are presented in which both polycrystalline and highly (00l) oriented samples were grown.

Proceedings of ISES World Congress 2007 (Vol.1-Vol.5)

Proceedings of ISES World Congress 2007 (Vol.1-Vol.5) PDF Author: D. Yogi Goswami
Publisher: Springer Science & Business Media
ISBN: 3540759972
Category : Technology & Engineering
Languages : en
Pages : 3091

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ISES Solar World Congress is the most important conference in the solar energy field around the world. The subject of ISES SWC 2007 is Solar Energy and Human Settlement, it is the first time that it is held in China. This proceedings consist of 600 papers and 30 invited papers, whose authors are top scientists and experts in the world. ISES SWC 2007 covers all aspects of renewable energy, including PV, collector, solar thermal electricity, wind, and biomass energy.

Metallic to Insulating Transition in Disordered Pulsed Laser Deposited Silicide Thin Films

Metallic to Insulating Transition in Disordered Pulsed Laser Deposited Silicide Thin Films PDF Author: Houssam Abou Mourad
Publisher:
ISBN:
Category :
Languages : en
Pages :

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ABSTRACT: A metal-to-insulating transition has been observed in iron, iron oxide, iron silicide and cobalt silicide thin films when deposited on Si substrate with a native SiOx layer. This transition produced a change in resistance of 5 orders of magnitude at a temperature of 250 K. To the best of the author's knowledge, this effect has not been reported in the literature prior to this study. This work reports a systematic experimental investigation carried out to understand the fundamental mechanism involved in the manifestation of this metal-to-insulator transition. The films were deposited using the pulsed laser deposition technique (PLD) in a base vacuum of the order of 10-6 torr at 400o C and room temperature. Several experiments were systematically conducted to understand the nature of the transition and the current path.

Semiconducting Silicides

Semiconducting Silicides PDF Author: Victor E. Borisenko
Publisher: Springer Science & Business Media
ISBN: 3642596495
Category : Technology & Engineering
Languages : en
Pages : 362

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Book Description
A comprehensive presentation and analysis of properties and methods of formation of semiconducting silicides. Fundamental electronic, optical and transport properties of the silicides collected from recent publications will help readers choose their application in new generations of solid-state devices. A comprehensive presentation of thermodynamic and kinetic data is given in combination with their technical application, as is information on corresponding thin-film or bulk crystal formation techniques.

Handbook of Thin Film Deposition Techniques Principles, Methods, Equipment and Applications, Second Editon

Handbook of Thin Film Deposition Techniques Principles, Methods, Equipment and Applications, Second Editon PDF Author: Krishna Seshan
Publisher: CRC Press
ISBN: 1482269686
Category : Science
Languages : en
Pages : 72

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The Handbook of Thin Film Deposition Techniques: Principles, Methods, Equipment and Applications, Second Edition explores the technology behind the spectacular growth in the silicon semiconductor industry and the continued trend in miniaturization over the last 20 years. This growth has been fueled in large part by improved thin film deposition tec

Chemical Solution Deposition of Semiconducting and Non-metallic Films

Chemical Solution Deposition of Semiconducting and Non-metallic Films PDF Author: Daniel Lincot
Publisher: The Electrochemical Society
ISBN: 9781566774338
Category : Science
Languages : en
Pages : 246

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Growth and Magnetism of Metallic Thin Films and Multilayers by Pulsed-laser Deposition

Growth and Magnetism of Metallic Thin Films and Multilayers by Pulsed-laser Deposition PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 55

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