Growth and Microstructural Properties of Cadmium Telluride Thin Films PDF Download
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Author:
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ISBN:
Category :
Languages : en
Pages : 12
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Book Description
This report discusses the growth of cadmium telluride films on indium antimonide substrates. Deposition is performed using a Closed Hot Wall Epitaxy (CHWE) system. Substrate and source temperatures are shown to have pronounced effects on the growth rate and microstructure of the CdTe film and also the microstructure of the substrate.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 12
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Book Description
This report discusses the growth of cadmium telluride films on indium antimonide substrates. Deposition is performed using a Closed Hot Wall Epitaxy (CHWE) system. Substrate and source temperatures are shown to have pronounced effects on the growth rate and microstructure of the CdTe film and also the microstructure of the substrate.
Author: Xiawa Wu
Publisher: ProQuest
ISBN: 9780549924876
Category : Cadmium compounds
Languages : en
Pages :
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Book Description
CdTe/CdS solar cell is one of the promising low cost high efficiency thin film solar cells. In this work, thin film CdS properties and the effect of CdS surface conditions on CdTe growth and performance of polycrystalline CdTe/CdS thin film solar cells are investigated. Thin film CdS optical, structural and chemical properties both as deposited and after CdCl 2 heat treatment are measured. CdS surface chemical state is studied by analyzing its surface chemistry after different surface treatments. Qualitative and quantitative measurements indicate sulfate and sulfite phases on thin film CdS surfaces as well as single crystal CdS, caused by oxidation in the air. The degree of CdS oxidation is highly dependent on thermal treatment ambient, temperature and time. Results indicate reduction in grain size and smoother morphology for CdTe deposited on heavily oxidized CdS compared to chemically reduced CdS surface. Solar cell open circuit voltage is much lower on cells with heavily oxidized CdS surface.
Author: Peter Capper
Publisher: IET
ISBN: 9780852968802
Category : Science
Languages : en
Pages : 648
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Book Description
This highly structured volume contains sections on growth and device aspects of mercury cadmium telluride (MCT).
Author: Peter Capper
Publisher: John Wiley & Sons
ISBN: 1119957575
Category : Technology & Engineering
Languages : en
Pages : 610
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Book Description
Mercury cadmium telluride (MCT) is the third most well-regarded semiconductor after silicon and gallium arsenide and is the material of choice for use in infrared sensing and imaging. The reason for this is that MCT can be ‘tuned’ to the desired IR wavelength by varying the cadmium concentration. Mercury Cadmium Telluride: Growth, Properties and Applications provides both an introduction for newcomers, and a comprehensive review of this fascinating material. Part One discusses the history and current status of both bulk and epitaxial growth techniques, Part Two is concerned with the wide range of properties of MCT, and Part Three covers the various device types that have been developed using MCT. Each chapter opens with some historical background and theory before presenting current research. Coverage includes: Bulk growth and properties of MCT and CdZnTe for MCT epitaxial growth Liquid phase epitaxy (LPE) growth Metal-organic vapour phase epitaxy (MOVPE) Molecular beam epitaxy (MBE) Alternative substrates Mechanical, thermal and optical properties of MCT Defects, diffusion, doping and annealing Dry device processing Photoconductive and photovoltaic detectors Avalanche photodiode detectors Room-temperature IR detectors
Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 1119313015
Category : Technology & Engineering
Languages : en
Pages : 582
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Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Author: ʻAlī ʻAbbās
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: Udai P. Singh
Publisher: Springer Nature
ISBN: 9811937249
Category : Technology & Engineering
Languages : en
Pages : 281
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Book Description
This book provides recent development in thin-film solar cells (TFSC). TFSC have proven the promising approach for terrestrial and space photovoltaics. TFSC have the potential to change the device design and produce high efficiency devices on rigid/flexible substrates with significantly low manufacturing cost. TFSC have several advantages in manufacturing compared to traditional crystalline Si-solar cells like less requirement of materials, can be prepared with earth’s abundant materials, less processing steps, easy to dispose, etc. Several universities/research institutes/industry in India and abroad are involved in the research area of thin-film solar cells. The book helps the readers to find the details about different thin-film technologies and its advancement at one place. Each chapter covers properties of materials, its suitability for PV applications, simple manufacturing processes and recent and past literature survey. The issues related to the development of high efficiency TFSC devices over large area and its commercial and future prospects are discussed.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
A method for forming thin films or layers of cadmium telluride (CdTe) for use in photovoltaic modules or solar cells. The method includes varying the substrate temperature during the growth of the CdTe layer by preheating a substrate (e.g., a substrate with a cadmium sulfide (CdS) heterojunction or layer) suspended over a CdTe source to remove moisture to a relatively low preheat temperature. Then, the method includes directly heating only the CdTe source, which in turn indirectly heats the substrate upon which the CdTe is deposited. The method improves the resulting CdTe solar cell reliability. The resulting microstructure exhibits a distinct grain size distribution such that the initial region is composed of smaller grains than the bulk region portion of the deposited CdTe. Resulting devices exhibit a behavior suggesting a more n-like CdTe material near the CdS heterojunction than devices grown with substrate temperatures held constant during CdTe deposition.
Author: United States. National Bureau of Standards
Publisher:
ISBN:
Category : Government publications
Languages : en
Pages : 766
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Book Description
Author:
Publisher:
ISBN:
Category : Weights and measures
Languages : en
Pages : 790
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