Growth and Characterization of Type II InxGa1-xSb/InAs Strained Layer Superlattices PDF Download
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Author: David Henry Tomich
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Languages : en
Pages : 382
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Author: David Henry Tomich
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Category :
Languages : en
Pages : 382
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Author: Keh-Young Adam Chi
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Category : Infrared spectroscopy
Languages : en
Pages : 186
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Author: Sheng S. Li
Publisher: The Electrochemical Society
ISBN: 9781566772150
Category : Science
Languages : en
Pages : 258
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Author: Tsukuru Katsuyama
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Languages : en
Pages : 244
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Publisher: Academic Press
ISBN: 0080864309
Category : Technology & Engineering
Languages : en
Pages : 443
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The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this two-volume survey offers a comprehensive discussion of the physics of strained-layer superlattices (Volume 32), as well as detailing fabrication technology and applications of the material (Volume 33). Although each volume is edited to stand alone, the two books combine to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.
Author: Manfred Martin Ospelt
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Languages : de
Pages : 164
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Author: Donald L. McDaniel
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Category : Technology & Engineering
Languages : en
Pages : 720
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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
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Category : Dissertations, Academic
Languages : en
Pages : 740
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Category : Infrared detectors
Languages : en
Pages : 720
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Category :
Languages : en
Pages : 14
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InAs{sub 1-x}Sbx/InAs strained-layer superlattice (SLS) semiconductors and thick epitaxial layers of InAs{sub 1-x}Sbx were grown under a variety of conditions by metal-organic chemical vapor deposition on InAs substrates. The III/V ratio was varied from 0.026 to 1.0 over a temperature range of 475--525C, at pressures of 200 to 660 torr and growth rates of 0.75 to 3.0?m/hour. The composition of the ternary can be predicted from the input gas molar flow rates using a thermodynamic model. At lower temperatures, the thermodynamic model must be modified to take account of the incomplete decomposition of arsine and trimethylantimony. These layers were characterized by optical microscopy, SIMS, and x-ray diffraction. The optical properties of these SLS̀s were determined by infrared photoluminescence and absorption measurements. The PL peak energies of the alloys̀ and the SLS̀s are consistently lower than the previously reported values for the bandgap of InAs{sub 1-x}Sbx alloys.
